Abstract: A dual gate vertical TFT is provided, comprising a substrate layer, a first layer stack and a second layer stack. The first layer stack comprises a first conductor layer deposited on the substrate layer forming a source electrode, a first insulator layer deposited on the first conductor layer forming a mid-gate, and a second conductor layer deposited on the first insulator layer forming a drain electrode. The layers of the first layer stack are patterned to expose at least portions of the first conductor layer, the first insulator layer, and the second conductor layer. The second layer stack may comprise a semiconductor layer making electrical contact with the source and drain electrodes, forming a substantially vertical channel across the mid-gate, a second insulator layer forming a top-gate insulator, and a third conductor layer forming a top-gate electrode. The layers of the second layer stack are patterned to form a top-gate.

Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. A single gate electrode may be embedded in the semiconductor layer, the single gate electrode comprising micro-perforations configured to control the flow of electrons therethrough in dependence on a predetermined voltage difference between the source electrode and the single gate electrode. The gate electrode masks a direct electric field between the source electrode and the drain electrode. A rate of flow of electrons through the perforations is increased with an increase in the predetermined voltage.

Abstract: The present invention provides a vertical-type thin film transistor (TFT) and methods of fabricating vertical TFTs. The vertical TFT may comprise a source electrode and a drain electrode, the drain electrode and the source electrode being positioned on vertically separated planes. A semiconductor layer may be arranged in between the source electrode and the drain electrode. At least one gate electrode may be embedded in the semiconductor layer. At least one of the source electrode and the drain electrode comprise patterned electrodes. One or all of the gate electrodes, the source electrode and the drain electrode may be patterned electrodes. The patterned electrodes may comprise one or more of fingers or combs, micro perforations, a mesh structure, or a lattice structure. Back side exposed fabrication techniques may be used to fabricate various of the vertical TFT embodiments.

Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. A single gate electrode may be embedded in the semiconductor layer, the single gate electrode comprising micro-perforations configured to control the flow of electrons therethrough in dependence on a predetermined voltage difference between the source electrode and the single gate electrode. The gate electrode masks a direct electric field between the source electrode and the drain electrode. A rate of flow of electrons through the perforations is increased with an increase in the predetermined voltage.

Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. Two or more gate electrodes may be embedded in the semiconductor layer, the two or more gate electrodes being arranged parallel to one another. Each of the two or more gate electrodes may comprise a structure adapted to allow the flow of electrons therethrough. The structure of each of the gate electrodes may comprise one of a comb-like structure, a mesh structure, a perforated structure, a lattice structure, and the like. The structure may block a direct electric field between the source electrode and the drain electrode. The structure may allow the flow of electrons around and between elements of the structure.

Abstract: The present invention comprises a reconfigurable variable voltage battery. One or more variable voltage battery (VVB) modules are connected in series to form a stacked variable voltage battery (SVVB or Stacked VVB). A variable voltage battery module may comprise at least one battery cell and processor controlled switches adapted to vary the output of the variable voltage battery module. By separately configuring the switches of each VVB module, the output of the stacked VVB module can produce any voltage up to the full sum of the voltages of all the cells in the individual VVB modules. In addition, charge balancing can easily be achieved with a stacked VVB configuration, as some VVB modules can be bypassed (e.g., by setting select switches to simulate a short condition) either to prioritize the discharging of stronger VVB modules, or to prioritize the charging of weaker VVB modules.

Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. Two or more gate electrodes may be embedded in the semiconductor layer, the two or more gate electrodes being arranged parallel to one another. Each of the two or more gate electrodes may comprise a structure adapted to allow the flow of electrons therethrough. The structure of each of the gate electrodes may comprise one of a comb-like structure, a mesh structure, a perforated structure, a lattice structure, and the like. The structure may block a direct electric field between the source electrode and the drain electrode. The structure may allow the flow of electrons around and between elements of the structure.

Abstract: The present invention comprises a reconfigurable variable voltage battery. One or more variable voltage battery (VVB) modules are connected in series to form a stacked variable voltage battery (SVVB or Stacked VVB). A variable voltage battery module may comprise at least one battery cell and processor controlled switches adapted to vary the output of the variable voltage battery module. By separately configuring the switches of each VVB module, the output of the stacked VVB module can produce any voltage up to the full sum of the voltages of all the cells in the individual VVB modules. In addition, charge balancing can easily be achieved with a stacked VVB configuration, as some VVB modules can be bypassed (e.g., by setting select switches to simulate a short condition) either to prioritize the discharging of stronger VVB modules, or to prioritize the charging of weaker VVB modules.

Abstract: Various operations may be performed based on a distance-related function associated with two or more devices. For example, an association procedure for two or more devices may be based on one or more determined distances. Similarly, presence management may be based on one or more determined distances. A distance-related function may take various form including, for example, a distance between devices, two or more distances between devices, a rate of change in a relative distance between devices, relative acceleration between devices, or some combination of two or more of the these distance-related functions.

Abstract: Various operations may be performed based on a distance-related function associated with two or more devices. For example, an association procedure for two or more devices may be based on one or more determined distances. Similarly, presence management may be based on one or more determined distances. A distance-related function may take various form including, for example, a distance between devices, two or more distances between devices, a rate of change in a relative distance between devices, relative acceleration between devices, or some combination of two or more of the these distance-related functions.

Abstract: A local feature descriptor for a point in an image is generated over multiple levels of an image scale space. The image is gradually smoothened to obtain a plurality of scale spaces. A point may be identified as the point of interest within a first scale space from the plurality of scale spaces. A plurality of image derivatives is obtained for each of the plurality of scale spaces. A plurality of orientation maps is obtained (from the plurality of image derivatives) for each scale space in the plurality of scale spaces. Each of the plurality of orientation maps is then smoothened (e.g., convolved) to obtain a corresponding plurality of smoothed orientation maps. Therefore, a local feature descriptor for the point may be generated by sparsely sampling a plurality of smoothed orientation maps corresponding to two or more scale spaces from the plurality of scale spaces.

Abstract: Various operations may be performed based on a distance-related function associated with two or more devices. For example, an association procedure for two or more devices may be based on one or more determined distances. Similarly, presence management may be based on one or more determined distances. A distance-related function may take various form including, for example, a distance between devices, two or more distances between devices, a rate of change in a relative distance between devices, relative acceleration between devices, or some combination of two or more of the these distance-related functions.

Abstract: This disclosure provides systems, methods, and apparatus related to electromechanical systems display devices. In one aspect, an apparatus includes a display assembly, a sensor, and a processor. The display assembly may include an array of electromechanical systems display devices. The sensor may be configured to provide a signal indicative of an illumination angle, a viewing angle, or both, with respect to a line perpendicular to the display assembly. The processor may be configured to receive the signal from the sensor, to determine the illumination angle and/or viewing angle, and to process image data to compensate for the determined illumination angle and/or viewing angle. In one implementation, the image data is processed to compensate for a shift in a wavelength of light reflected from at least one of the electromechanical systems display devices that would have occurred as a result of a non-normal illumination and/or viewing angle.

Abstract: Operating at least one low duty cycle (LDC) controller to maintain synchronization between the LDC controller and a plurality of LDC terminals operating over a communication network using only overhead channels of the network and conforming to the protocol and timing of said network, wherein synchronization between the LDC controller and the plurality of LDC terminals is maintained separately from the protocol and timing of the communication network, and enables the LDC controller to schedule power down and wake up of the plurality of LDC terminals for durations longer than allowable under the protocol and timing of the communication network.

Abstract: Methods, devices, and computer program products for robust estimation of color-dependent measurements are described herein. In one aspect, a method for generating a reference color grid that may be placed beside a color-dependent measuring device is disclosed. The reference color grid may contain a number of colors which enable a mapping from the color space of a testing device to a reference color space. This mapping may allow a function that is able to determine an estimate of a color-dependent measurement based on a color in the reference color space to be used. In another aspect, a method for robust estimation of color-dependent measurement using a reference color guide is disclosed.

Abstract: This disclosure provides systems, methods, and apparatus for an electromechanical systems (EMS) device with one or more protrusions connected to a surface of the EMS device. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, and a movable electrode over the stationary electrode. The movable electrode is configured to move to three or more positions across a gap by electrostatic actuation between the movable electrode and the stationary electrode. When the protrusions contact any surface of the EMS device at one of the positions across the gap, the protrusions change the stiffness of the EMS device. At least one of the surfaces in contact with the one or more protrusions is non-rigid. In some implementations, the protrusions have a height greater than about 20 nm.

Abstract: This disclosure provides systems, methods and apparatus for an electromechanical systems reflective display device. In one aspect, an electromechanical systems display device includes a reflective layer and an absorber layer. The absorber layer is spaced apart from the reflective layer to define a cavity between the absorber layer and the reflective layer. The absorber layer is capable of transmitting light into the cavity, absorbing light, and reflecting light, and includes a metal layer. A plurality of matching layers are on a surface of the absorber layer facing away from the cavity, the plurality of matching layers including a first matching layer disposed on the absorber layer and a second matching layer disposed on the first matching layer.

Abstract: A display apparatus may include a multi-state IMOD, such as an analog IMOD (AIMOD), a 3-state IMOD (such as having a white state, a black state and one colored state) or a 5-state IMOD (such as having a white state, a black state and three colored states). The multi-state IMOD may include a movable reflective layer and an absorber stack. The absorber stack may include a first absorber layer having a first absorption coefficient and a first absorption peak at a first wavelength, a second absorber layer having a second absorption coefficient and a second absorption peak at a second wavelength, and a third absorber layer having a third absorption coefficient and a third absorption peak at a third wavelength. The first, second and third absorption layers may have absorption levels that drop to nearly zero at the center of each neighboring absorber layer's absorption peak.

Abstract: Various operations may be performed based on a distance-related function associated with two or more devices. For example, an association procedure for two or more devices may be based on one or more determined distances. Similarly, presence management may be based on one or more determined distances. A distance-related function may take various form including, for example, a distance between devices, two or more distances between devices, a rate of change in a relative distance between devices, relative acceleration between devices, or some combination of two or more of the these distance-related functions.

Abstract: Methods, apparatuses, and devices are described for converting non-stereo cameras into a stereo camera. At least one optical element may be used to temporarily change an effective position and an effective orientation of a first non-stereo camera. The changed effective position may be displaced from an effective position of a second non-stereo camera by a predetermined distance, and the changed effective orientation may provide the first non-stereo camera with a field of view that overlaps a field of view of the second non-stereo camera. The at least one optical element may be used to capture a first image with the first non-stereo camera. A second image may be captured with the second non-stereo camera. The second image may have a frame of reference displaced from a frame of reference of the first image by the predetermined distance.