Patents by Inventor ChongJieh CHEW

ChongJieh CHEW has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making semiconductor devices including reactant treatment of residual surface portion
    Patent number: 9236243
    Abstract: A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: January 12, 2016
    Assignee: STMICROELECTRONICS PTE LTD
    Inventor: ChongJieh Chew
  • METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING REACTANT TREATMENT OF RESIDUAL SURFACE PORTION
    Publication number: 20150194303
    Abstract: A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.
    Type: Application
    Filed: January 9, 2014
    Publication date: July 9, 2015
    Applicant: STMICROELECTRONICS PTE LTD
    Inventor: ChongJieh CHEW