Abstract: Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

Abstract: Disclosed herein is radiation detector comprising: a radiation absorption layer configured to generate electric signals by absorbing radiation particles; an electronics layer comprising an electronic system configured to process or interpret the signals; a flexible PCB configured to receive output from the electronic system; wherein the radiation absorption layer and the flexible PCB are mounted on a same side of the electronics layer.

Abstract: Disclosed herein is an image sensor comprising: a first, a second, and a third radiation detectors, each of which comprising a planar surface to receive radiation from a radiation source; wherein the planar surfaces of the first radiation detector and the second radiation detector are not parallel, the planar surfaces of the second radiation detector and the third radiation detector are not parallel, and the planar surfaces of the third radiation detector and the first radiation detector are not parallel; wherein the first radiation detector, the second radiation detector and the third radiation detector are not arranged in the same row; wherein the first, the second and the third radiation detectors are configured such that the planar surface of each of them includes a position at which an angle of incidence of the radiation from the radiation source is 0°.

Abstract: Disclosed herein is an image sensor comprising: a first package comprising a plurality of radiation detectors mounted on a printed circuit board (PCB); wherein a dead zone of the first package does not extend between neighboring radiation detectors among the plurality of radiation detectors; wherein the radiation detectors have no guard rings or sidewall doping.

Abstract: Disclosed herein is radiation detector comprising: a radiation absorption layer configured to generate electric signals by absorbing radiation particles; an electronics layer comprising an electronic system configured to process or interpret the signals; a flexible PCB configured to receive output from the electronic system; wherein the radiation absorption layer and the flexible PCB are mounted on a same side of the electronics layer.

Abstract: Disclosed herein is an image sensor comprising: a first package comprising a plurality of radiation detectors mounted on a printed circuit board (PCB); wherein a dead zone of the first package does not extend between neighboring radiation detectors among the plurality of radiation detectors; wherein the radiation detectors have no guard rings or sidewall doping.

Abstract: Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

Abstract: Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

Abstract: Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

Abstract: A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back surface; then performing an etching on the substrate back surface, and making the TSV backside reveal more than 10 ?m.

Abstract: A TSV backside reveal structure is provided, formed by a TSV conductive column on a substrate running throughout the substrate front surface and substrate back surface and stretching out of the substrate back surface; wherein, a sloping buffer is formed within the region between the substrate back surface and the TSV, and the height of the sloping buffer changes continuously; wherein the region close to the TSV has the highest height and the height of the buffer gradually decreases to that of the substrate back surface.

Abstract: A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back surface; then performing an etching on the substrate back surface, and making the TSV backside reveal more than 10 ?m.