Abstract: The present disclosure provides a data interaction method and apparatus and an electronic device. The method is applied to a cloud service end. A specific implementation of the method comprises: establishing a long-connection communication channel with a local service end, the local service end comprising a target transaction system to be integrated; receiving first target data sent by the local service end through the long-connection communication channel, the first target data being obtained based on updated first transaction data of the target transaction system; performing data update using the first target data. In the implementation, the target transaction system included by the local service end needn't to be exposed to an external network, thereby improving the security of data interaction, reducing the number of times of establishing the communication connection between the local service end and the cloud service end, and improving the efficiency of data interaction.

Abstract: The present application discloses a display panel manufacturing device and a cleaning method. The display panel manufacturing device includes: a machine table, a working pipeline, a gas supply means and a liquid supply means; a detection means is provided on the machine table; a first automatic valve is provided on a gas supply pipeline; and a second automatic valve is provided on a liquid supply pipeline.

Abstract: The present application discloses a display panel manufacturing device and a cleaning method. The display panel manufacturing device includes: a machine table, a working pipeline, a gas supply means and a liquid supply means; a detection means is provided on the machine table; a first automatic valve is provided on a gas supply pipeline; and a second automatic valve is provided on a liquid supply pipeline.

Abstract: The present application discloses a display panel manufacturing device and a cleaning method. The display panel manufacturing device includes: a machine table, a working pipeline, a gas supply means and a liquid supply means; a detection means is provided on the machine table; a first automatic valve is provided on a gas supply pipeline; and a second automatic valve is provided on a liquid supply pipeline.

Abstract: Amorphous or polycrystalline films have been recrystallized into single-crystal thin films (of micrometer thickness) by a zone melting technique, in which an electrically heated wire generated a narrow heated or molten zone (0.5-2 mm wide) on the substrate sandwiched between two pieces of glass or indium-tin-oxide-coated glass. The substrate can be either an organic or inorganic compound. When the molten zone was moved slowly (3-120 ?m/min) across the layer from one end of the cell to the other, a single-crystal film was produced after a single pass. This technique allows for thin film purification and an improvement in electronic, optical, and optoelectronic properties of the thin film. After this treatment, the steady-state short-circuit photocurrent can be improved by several orders of magnitude. These films are useful in the fields of optics and electronics for improving the performance in devices such as thin-film transistors and organic light-emitting diodes.

Abstract: Amorphous or polycrystalline films have been recrystallized into single-crystal thin films (of micrometer thickness) by a zone melting technique, in which an electrically heated wire generated a narrow heated or molten zone (0.5-2 mm wide) on the substrate sandwiched between two pieces of glass or indium-tin-oxide-coated glass. The substrate can be either an organic or inorganic compound. When the molten zone was moved slowly (3-120 &mgr;m/min) across the layer from one end of the cell to the other, a single-crystal film was produced after a single pass. This technique allows for thin film purification and an improvement in electronic, optical, and optoelectronic properties of the thin film. After this treatment, the steady-state short-circuit photocurrent can be improved by several orders of magnitude. These films are useful in the fields of optics and electronics for improving the performance in devices such as thin-film transistors and organic light-emitting diodes.

Abstract: Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations in the film when the irradiation is removed, but trapped charge can be released by subsequent irradiation. Repeated information storage, followed by erasure, returns the films to their original state without degradation.

Abstract: Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations in the film when the irradiation is removed, but trapped charge can be released by subsequent irradiation. Repeated information storage, followed by erasure, returns the films to their original state without degradation.