Abstract: An apparatus for processing a substrate may include a chamber, a substrate support, a showerhead structure and a purge ring structure. The purge ring structure may be arranged at an edge portion of the substrate support to inject a deposition-preventing gas, which may be supplied from the substrate support, to an edge portion of an upper surface of the substrate. The purge ring structure may include a purge ring and a plurality of bosses. The purge ring may be configured to surround the substrate. The bosses may be protruded from an inner surface of the purge ring in a radius direction of the substrate to form a gap between the inner surface of the purge ring and the edge portion of the substrate. The deposition-preventing gas may be supplied to the upper surface of the substrate through the gap.

Abstract: A heater for depositing a thin film to deposit a thin film on a seated wafer by heating is provided. The heater for depositing a thin film includes: a wafer supporting plate on which a wafer is seated and a plurality of injection holes are disposed at the edge of the wafer supporting plate and in which a heat generating member is included; a shaft disposed at the lower side of the wafer supporting plate which comprises an inert gas pathway through which inert gas is provided; and a flow channel forming cover bonded to the lower part of the wafer supporting plate, and comprising an inner space formed between the flow channel forming cover and the wafer supporting plate, wherein the injection holes and the inert gas pathway are connected via the inner space.

Abstract: Provided is a thin film deposition reactor, including a reactor block having a deposition space, a wafer block, a top lid for covering and sealing the reactor block, a showerhead for spraying a reaction gas on the wafer block, and an exhaust line through which gases are exhausted from the reactor block. A lower pumping baffle and an upper pumping baffle are stacked on a bottom of the reactor block between an outer circumference of the wafer block and an inner circumference of the reactor block. A lower pumping region is formed between the lower pumping baffle and an inner sidewall of the reactor block. An upper pumping region is formed between the upper pumping baffle and the inner sidewall of the reactor block. The deposition space is connected to the upper pumping region by a plurality of upper pumping holes formed in the upper pumping baffle, and the upper pumping region is connected to the lower pumping region by a plurality of lower pumping holes formed in the lower pumping baffle.

Abstract: Provided is a thin film deposition reactor, including a reactor block having a deposition space, a wafer block, a top lid for covering and sealing the reactor block, a showerhead for spraying a reaction gas on the wafer block, and an exhaust line through which gases are exhausted from the reactor block. A lower pumping baffle and an upper pumping baffle are stacked on a bottom of the reactor block between an outer circumference of the wafer block and an inner circumference of the reactor block. A lower pumping region is formed between the lower pumping baffle and an inner sidewall of the reactor block. An upper pumping region is formed between the upper pumping baffle and the inner sidewall of the reactor block. The deposition space is connected to the upper pumping region by a plurality of upper pumping holes formed in the upper pumping baffle, and the upper pumping region is connected to the lower pumping region by a plurality of lower pumping holes formed in the lower pumping baffle.