Patents by Inventor Choong-Min LEE
Choong-Min LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11982756Abstract: A method, implemented by a computer, for determining a position of a personal mobility device (PMD) comprises: estimating a position of a PMD based on a first wireless signal; determining whether the PMD is within an intermediate area between a first area and a second area, based on an estimated position of the PMD; determining whether the PMD moves to the second area, by using both the first wireless signal and a second wireless signal; and determining position of the PMD by using any one of the first wireless signal and the second wireless signal based on a movement of the PMD to the second area.Type: GrantFiled: November 4, 2021Date of Patent: May 14, 2024Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATIONInventors: Gu Min Jeong, Hyun Jung Oh, Seung Hyeon Lee, Yo Cheol Jang, Choong Yub Lee, Jongmyung Park, Dong Hee Seok, Jae Jun Ha
-
Patent number: 11969213Abstract: Provided are apparatuses, a non-transitory computer-readable medium or media, and methods for supporting predicting of vascular disease using a fundus image of a subject. In certain aspects, disclosed a method including the steps of: extracting a feature information from a first fundus image of the subject based on a machine learning model; generating a second fundus image having a feature which is corresponding to the feature information by mapping a saliency factor to the first fundus image; and displaying the first fundus image and the second fundus image on a display device.Type: GrantFiled: May 9, 2021Date of Patent: April 30, 2024Assignee: XAIMED CO., LTD.Inventors: Sang Min Park, Joo Young Chang, Choong Hee Lee, Il Hyung Shin
-
Patent number: 11920233Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: GrantFiled: February 23, 2023Date of Patent: March 5, 2024Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee
-
Patent number: 11274961Abstract: An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.Type: GrantFiled: January 18, 2017Date of Patent: March 15, 2022Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Soo Hyun Lee, Choong Min Lee, Gun Woo Han
-
Publication number: 20210199499Abstract: An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.Type: ApplicationFiled: January 18, 2017Publication date: July 1, 2021Inventors: Ki Yon Park, Soo Hyun Lee, Choong Min Lee, Gun Woo Han
-
Patent number: 10323979Abstract: Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.Type: GrantFiled: May 3, 2016Date of Patent: June 18, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Choong Min Lee, Hwa Mok Kim, Soo Hyun Lee, Gun Woo Han
-
Publication number: 20180172506Abstract: Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.Type: ApplicationFiled: May 3, 2016Publication date: June 21, 2018Inventors: Ki Yon Park, Choong Min Lee, Hwa Mok Kim, Soo Hyun Lee, Gun Woo Han
-
Publication number: 20180122970Abstract: Disclosed herein is a light detection device. The light detection device includes a base layer, an electrostatic discharge (ESD) prevention layer disposed on the base layer and including an undoped nitride-based semiconductor, a light absorption layer disposed on the ESD prevention layer, a Schottky junction layer disposed on the light absorption layer, and a first electrode and a second electrode electrically connected to the Schottky junction layer and the base layer, respectively, wherein the ESD prevention layer has a lower average n-type dopant concentration than the base layer.Type: ApplicationFiled: May 11, 2016Publication date: May 3, 2018Inventors: Ki Yon Park, Gun Woo Han, Choong Min Lee, Soo Hyun Lee
-
Patent number: 9882085Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: GrantFiled: February 10, 2016Date of Patent: January 30, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
-
Patent number: 9514926Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: GrantFiled: May 4, 2015Date of Patent: December 6, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee
-
Patent number: 9450141Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.Type: GrantFiled: August 1, 2013Date of Patent: September 20, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Young Wug Kim, Su Jin Shin, Su Youn Hong
-
Publication number: 20160172539Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: ApplicationFiled: February 10, 2016Publication date: June 16, 2016Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
-
Patent number: 9263255Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: GrantFiled: March 19, 2013Date of Patent: February 16, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
-
Publication number: 20150380236Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: ApplicationFiled: May 4, 2015Publication date: December 31, 2015Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee
-
Publication number: 20150318436Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.Type: ApplicationFiled: August 1, 2013Publication date: November 5, 2015Applicant: Seoul Viosys Co., Ltd.Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Young Wug Kim, Su Jin Shin, Su Youn Hong
-
Patent number: 9048086Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: GrantFiled: April 29, 2014Date of Patent: June 2, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee
-
Publication number: 20150069418Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.Type: ApplicationFiled: March 19, 2013Publication date: March 12, 2015Inventors: Jeong Hun Heo, Joo Won Choi, Choong Min Lee, Su Jin Shin, Ki Bum Nam, Yu Dae Han, A Ram Cha Lee
-
Publication number: 20140322899Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.Type: ApplicationFiled: April 29, 2014Publication date: October 30, 2014Applicant: Seoul Viosys Co., Ltd.Inventors: Su Youn Hong, Joo Won Choi, Jeong Hun Heo, Su Jin Shin, Choong Min Lee
-
Publication number: 20140279437Abstract: An electronic payment system in an electronic device displays a list of electronic payment applications and receives an input for selecting a default electronic payment application from the list. The system sets the selected default electronic payment application as a default electronic payment application application among one or more electronic payment applications and performs electronic payment by activating a payment means of the set default electronic payment application.Type: ApplicationFiled: March 10, 2014Publication date: September 18, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Choong-Min LEE, Mi-Jeong KIM, Young-Sik PARK, Taeck-Ki LEE, Gi-Ung JUNG