Patents by Inventor Chor-Jye Huang

Chor-Jye Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
    Patent number: 7235129
    Abstract: A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: June 26, 2007
    Assignee: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Yung-Kuan Tseng, Chor-Jye Huang
  • Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
    Publication number: 20050223969
    Abstract: A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.
    Type: Application
    Filed: April 13, 2004
    Publication date: October 13, 2005
    Applicant: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Yung-Kuan Tseng, Chor-Jye Huang