Abstract: A dummy wafer storage cassette for storing dummy wafers. The dummy wafer storage cassette may have more than 30 wafer slots for accommodating dummy wafers. The dummy wafer cassette may have substantially the same outer dimensions as a standardized wafer cassette with 25 wafer slots and a pitch of the wafer slots of the dummy wafer storage cassette may be smaller than a pitch between the wafer slots in the standardized wafer cassette.

Abstract: A spatial atomic layer deposition apparatus (10), including a showerhead (16) with a showerhead side (18) having a center, a central area and a circumferential area. The apparatus also includes a susceptor (12) having a substrate support side that extends parallel to and of opposite the showerhead side forming a gap. The susceptor and the showerhead are rotatable relative to each other around an axis of rotation. The apparatus has a plurality of switchable showerhead sections. The apparatus also includes a plurality of multi-way valve assemblies. Each switchable showerhead section is fluidly connected with one of the plurality of multi-way valve assemblies, so as to fluidly connect a selected one of a plurality of different gas sources with that switchable showerhead section.

Abstract: A wafer boat cooldown device comprising a bottom plate and a rotatable table that is rotatable between a number of index positions. The rotatable table comprises at least two wafer boat positions for supporting a wafer boat. A vertically extending wall structure is mounted on the rotatable table and creates, at each wafer boat position, a wafer boat chamber having a gas supply area and a gas discharge area. The wafer boat cooldown device further comprises a plenum chamber which extends under the bottom plate. The plenum chamber accommodates at least one gas/liquid heat exchanger.

Abstract: An assembly of a liner and a support flange for a vertical furnace for processing wafers, wherein the support flange is configured for supporting the liner, at least two support members that are connected to the cylindrical wall, each having a downwardly directed supporting surface, wherein each downwardly directed supporting surface is positioned radially outwardly from the inner cylindrical surface, wherein the support flange and/or the liner are configured such that, when the liner is placed on the support flange, the downwardly directed supporting surfaces are in contact with an upper surface of the support flange and support the liner, and wherein at least the part of the lower end surface of the liner that bounds the inner cylindrical surface is spaced apart from the upper surface of the support flange.

Abstract: An assembly of a liner and a flange for a vertical furnace for processing substrates is provided. The liner being configured to extend in the interior of a process tube of the vertical furnace, and the flange is configured to at least partially close a liner opening. The liner comprising a substantially cylindrical wall delimited by the liner opening at a lower end and closed at a higher end and being substantially closed for gases above the liner opening and defining an inner space. The flange comprising: an inlet opening configured to insert and remove a boat configured to carry substrates in the inner space of the liner; a gas inlet to provide a gas to the inner space. The assembly is constructed and arranged with a gas exhaust opening to remove gas from the inner space and a space between the liner and the low pressure tube.

Abstract: A vertical furnace processing system for processing semiconductor substrates, comprising the following modules: —a processing module including a vertical furnace; an I/O-station module including at least one load port to which a substrate cassette is dockable; a wafer handling module configured to transfer semiconductor substrates between the processing module and a substrate cassette docked to the load port of the I/O-station module; and a gas supply module including at least one gas supply or gas supply connection for providing the vertical furnace of the processing module with process gas, wherein at least two of the said modules are mutually decouplably coupled, such that said at least two modules are decouplable from one another to facilitate servicing of the system, and in particular the vertical furnace thereof.

Abstract: An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

Abstract: An assembly of a liner and a support flange for a vertical furnace for processing wafers, wherein the support flange is configured for supporting the liner, at least two support members that are connected to the cylindrical wall, each having a downwardly directed supporting surface, wherein each downwardly directed supporting surface is positioned radially outwardly from the inner cylindrical surface, wherein the support flange and/or the liner are configured such that, when the liner is placed on the support flange, the downwardly directed supporting surfaces are in contact with an upper surface of the support flange and support the liner, and wherein at least the part of the lower end surface of the liner that bounds the inner cylindrical surface is spaced apart from the upper surface of the support flange.

Abstract: A vertical furnace processing system for processing semiconductor substrates, comprising the following modules:—a processing module including a vertical furnace; an I/O-station module including at least one load port to which a substrate cassette is dockable; a wafer handling module configured to transfer semiconductor substrates between the processing module and a substrate cassette docked to the load port of the I/O-station module; and a gas supply module including at least one gas supply or gas supply connection for providing the vertical furnace of the processing module with process gas, wherein at least two of the said modules are mutually decouplably coupled, such that said at least two modules are decouplable from one another to facilitate servicing of the system, and in particular the vertical furnace thereof.

Abstract: A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer.

Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

Abstract: A wafer boat assembly for use with a loading apparatus configured to insert the wafer boat assembly loaded with semiconductor substrates into a furnace. The wafer boat assembly includes a first wafer boat part comprising a base and a first cover part mounted on the base; and a second wafer boat part comprising a second cover part that is provided with receiving slots for holding a plurality of semiconductor substrates. The second cover part has an arcuate shape that extends from a first longitudinal edge to a second longitudinal edge. The first and second wafer boat parts are detachably connectable, such that they mate together to extend around an outer perimeter of a loaded substrate at a predetermined distance.

Abstract: A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer.

Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.

Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

Abstract: Wafer boat assembly for use in a loading apparatus for loading semiconductor substrates in a vertical furnace configured for batch processing, wherein the wafer boat assembly comprises a wafer boat for holding semiconductor substrates and a cover configured to substantially surround the substrates, wherein the wafer boat assembly is provided with a first wafer boat part comprising a base and a first cover part mounted thereto, said first cover part extending at least partially along a base upper perimeter; and a second wafer boat part comprising a second cover part removably provided on the first wafer boat part and configured to cooperate with the first cover part, said second cover part comprising receiving slots for receiving at least a semiconductor substrate to be processed.

Abstract: The process chamber of a vertical furnace is provided with a closure, or door, comprising an upper and a lower door plate. The upper door plate has a gas exhaust opening proximate its center, thereby allowing for a symmetrical flow of process gases through the process chamber and into the gas exhaust opening. The upper door plate is spaced from the lower door plate to form a sealing chamber, which is purged with inert gas. Optionally, both the gas exhaust opening and the sealing chamber empty into a gas exhaust channel formed inside the upper door plate. The gas exhaust channel leads to an exhaust which exhausts gases from the furnace and separates the flow path of corrosive process gases from surfaces of the lower door plate, which may be formed of relatively easily-corroded metal.

Abstract: A vertical furnace for processing wavers positioned on a support structure. The furnace comprises an inner sleeve, heating means and an outer sleeve. To support the inner sleeve on the support structure a support sleeve is provided engaging with its top and lower part of the inner sleeve and resting with its lower end on the support structure.