Abstract: A process for dynamically adjusting the concentration of one or more reactants in a plasma assisted press, such as a plasma etch process or a plasma deposition process, is describe. The concentration of one or more reactants, as well as the concentration of a non-reactive gas, in a plasma enhance process for the formation of an integrated circuit structure is quantitatively monitored by actinometry to derive a ratio of such concentrations of reactant to non-reactant. The concentration of the reactant or reactants in the plasma processing chamber is then maintained in the chamber by adjusting the flow of such reactant or reactants into the chamber based on changes in such ratio based on such continuous quantitative monitoring of the both the concentration of the reactant or reactants and that of the non-reactive (non-changing concentration) component.

Abstract: A process for dynamically adjusting the concentration of one or more reactants in a plasma assisted process, such as a plasma etch process or a plasma deposition process, is described. The concentration of one or more reactants, as well as the concentration of a non-reactive gas, in a plasma enhanced process for the formation of an integrated circuit structure is quantitatively monitored by actinometry to derive a ratio of such concentrations of reactant to non-reactant. The concentration of the reactant or reactants in the plasma processing chamber is then maintained in the chamber by adjusting the flow of such reactant or reactants into the chamber based on changes in such ratio based on such continuous quantitative monitoring of the both the concentration of the reactant or reactants and that of the non-reactive (non-changing concentration) component.

Abstract: A method of selectively etching titanium-containing materials without attacking aluminum or silicon dioxide is describe, wherein an atomic chlorine etching environment is generated using downstream techniques. Atomic chlorine in the absence of ion bombardment (as provided by downstream etching) etches titanium-containing materials such as titanium nitride without attacking silicon dioxide. In one embodiment of the invention, atomic chlorine is generated by the discharge of energy into molecular chlorine. In another embodiment of the invention, discharge of energy into a fluorine-containing gas causes the generation of atomic fluorine. Molecular chlorine is then added, creating a fluorine-chlorine exchange reaction which produces atomic chlorine. The presence of fluorine inhibits etching of aluminum, but does not impede the etching of titanium-containing materials.

Abstract: A technique for chemi-mechanical polishing of semiconductor wafers using ultrasonic energy is disclosed. A transducer is mounted in the polishing system, either to a platen to which the polishing pad is mounted, or to a carrier to which the semiconductor wafer is mounted. In either case, relative vibratory motion is established between the wafer and the polishing pad. The transducer may also be mounted within the reservoir containing the platen, carrier and polishing slurry, to agitate the slurry itself. By vibrating the polishing pad relative to the wafer, polish rate and repeatability are enhanced, the polishing process is less sensitive to pad use history, and the pad is somewhat self-conditioning.