Patents by Inventor Chris L. Inman

Chris L. Inman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method for forming a faceted opening and a layer filling therein
    Patent number: 6727158
    Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: April 27, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Dirk J. Sundt, William A. Polinsky, Mark A. Bossler, Gabriel G. Videla, Chris L. Inman
  • Structure and method for forming a faceted opening and layer filling therein
    Publication number: 20040046229
    Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.
    Type: Application
    Filed: July 15, 2003
    Publication date: March 11, 2004
    Inventors: Dirk J. Sundt, William A. Polinsky, Mark A. Bossler, Gabriel G. Videla, Chris L. Inman
  • Structure and method for forming a faceted opening and a layer filling therein
    Publication number: 20030085444
    Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.
    Type: Application
    Filed: November 8, 2001
    Publication date: May 8, 2003
    Inventors: Dirk J. Sundt, William A. Polinsky, Mark A. Bossler, Gabriel G. Videla, Chris L. Inman
  • One chamber in-situ etch process for oxide and conductive material
    Patent number: 5094712
    Abstract: A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in-situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode. This method has an oxide etch step and a silicide/poly etch step, both of which are performed as plasma etch steps. The process allows a continuous etch to be applied without removing the wafer from the plasma reactor chamber. The fully etched sandwich structure has a vertical profile which has a controlled slope.
    Type: Grant
    Filed: October 9, 1990
    Date of Patent: March 10, 1992
    Assignee: Micron Technology, Inc.
    Inventors: David S. Becker, Chris L. Inman