Abstract: In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing an embodiment of the method comprises a first amplifier stage with an integrator circuit and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit, and a sampling capacitor connected between an output of the first amplifier stage and an input of the second amplifier stage.

Abstract: In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation.

Abstract: In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.

Abstract: In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.

Abstract: A method of operating a passive matrix addressable ferroelectric device having a voltage pulse protocol with a pre-disturb and post-disturb cycle before and after a disturb generating operation cycle respectively in order to minimize the effect of disturb voltage on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when It is applied for either a write or read operation.

Abstract: In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing the method of the invention comprises a first amplifier stage (A1) with an integrator circuit (715) and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit (725), and a sampling capacitor (720) connected between an output (716) of the first amplifier stage (A1) and an input (722) of the second amplifier stage (A2).

Abstract: A passive matrix-addressable device may include individually addressable cells of a polarizable material. The cells store data in one of two polarization states in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines. The cells are provided in or at the crossings between the word and bit lines and a voltage pulse protocol is used read and write data to cells. During reading, a word line is activated by applying voltage which relative to the potential on all crossing bit lines corresponds to the voltage Vs and data stored in the cells connected to this active word line are determined by detecting the charge values of the cells.

Abstract: In a method for operating a passive matrix-addessable ferroelectric or electret memory device comprising memory cells in the form of a ferroelectric or electret thin-film polarizable memory material exhibiting hysteresis, particularly a ferroelectric or electret polymer thin film, and a first set of parallel electrodes forming word line electrodes in the device and a second set of parallel electrodes forming bit lines in the device, the word lines being oriented orthogonally to the bit lines, such that the word lines and bit lines are in direct contact with the memory cells, which can be set to either of two polarization states or switched between these by applying a switching voltage larger than a coercive voltage of the memory material between a word line and a bit line, a voltage pulse protocol with at least one disturb generating operation cycle is applied for switching selected addressed cells to determined polarization state.

Abstract: A new oral IR formulation in solid form for a low molecular weight thrombin inhibitor having pH dependant dissolution, characterized in that the formulation comprises a filler or a combination of fillers having disintegrant properties in an amount higher than 35% w/w of the formulation.

Abstract: A new oral IR formulation in solid form for a low molecular weight thrombin inhibitor having pH dependant dissolution, characterized in that the formulation comprises a filler or a combination of fillers having disintegrant properties in an amount higher than 35% w/w of the formulation.

Abstract: In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment including at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage.

Abstract: In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment comprising at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage.

Abstract: A drug delivery system for oral administration in solid dry form of greasy/oily/sticky substance(s) and pharmaceutically active substance(s) or pharmaceutically active substance(s) which itself/themselves is/are greasy/oily/sticky) characterized by having a plurality of solid, polymeric matrix beads comprising considerable amounts of greasy/oily/sticky substances and having fast release characteristics and a process for the preparation of such solid, polymeric matrix beads comprising greasy/oily/sticky substances.

Abstract: A new oral IR formulation in solid form for a low molecular weight thrombin inhibitor having pH dependant dissolution, characterized in that the formulation comprises a filler or a combination of fillers having disintegrant properties in an amount higher than 35% W/W of the formulation.

Abstract: In a method for reading of a passive matrix-addressable device, particularly a memory device or a sensor device with individually addressable cells of a polarizable material, the cells store data in the form of one of two polarization states +Pr;−Pr in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines (WL;BL) in an orthogonal electrode matrix, and wherein the cells are provided in or at the crossings between the word and bit lines (WL;BL) a voltage pulse protocol is used according to which electric potentials on all word and bit lines are controlled coordinated in time. During reading a word line (WL) is activated by applying voltage which relative to the potential on all crossing bit lines (BL) corresponds to the voltage Vs and data stored in the cells connected to this active word line (AWL) are determined by detecting the charge values of the cells in a detection means (SA).

Abstract: A drug delivery system for oral administration in solid dry form of a greasy/oily/sticky substance and a pharmaceutically active substance or a pharmaceutically active substance which itself is greasy/oily/sticky characterized by having a plurality of porous inorganic particles of small size incorporated with considerable amounts of greasy/oily/sticky substances and having fast release characteristics and a process for the preparation of such porous inorganic particles containing greasy/oily/sticky substances.

Abstract: A drug delivery system for oral administration in solid dry form of greasy/oily/sticky substance(s) and pharmaceutically active substance(s) or pharmaceutically active substance(s) which itself/themselves is/are greasy/oily/sticky) characterized by having a plurality of solid, polymeric matrix beads comprising considerable amounts of greasy/oily/sticky substances and having fast release characteristics and a process for the preparation of such solid, polymeric matrix beads comprising greasy/oily/sticky substances.

Abstract: A method is disclosed for producing a printing ink decorated packaging material. The packaging material heat sealable outer coatings. One or both sides of the packaging material are subjected to corona discharge surface treatment to increase the surface tension. Printing is applied to the treated surface. The packaging material then passes the nip between heated rollers in order to reduce the surface energy of the outer plastic layers. Subsequently, a surface treatment of hydrogen peroxide is applied to the packaging material to sterilize the surface.

Abstract: A new oral IR formulation in solid form for a low molecular weight thrombin inhibitor having pH dependant dissolution, characterized in that the formulation comprises a filler or a combination of fillers having disintegrant properties in an amount higher than 35% w/w of the formulation.

Abstract: A method of producing a packaging laminate for aseptic packages of the type which is produced in that a web of the packaging laminate is, for the purpose of sterilization, led through a bath of hydrogen peroxide prior to the reforming of the web into aseptic packages. The packaging material is produced in that a web of paper which has, on the one side of the web, an applied outer coating of plastic, is, for the purpose of promoting adhesion, subjected to a surface treatment changing polarity, where after the treated outer plastic coating is provided with a decor of water-based printing ink which is applied in the desired pattern on the outside of the outer plastic coating.