Abstract: Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.

Abstract: Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula: In[R1R2R3R4CpL1] or In[CpL1L2y] wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).

Abstract: This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Doped-Metal Oxides Layer, by ALD or CVD. Metals discussed here arm IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W) and dopants includes her B, Al, C, Si, N, P, S, allowing the oxide network to be porous, which may be favored by the presence of the dopant. The film also needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

Abstract: The disclosure describes a method of depositing a plurality Ft metal containing nanodots on a catalyst carbon support structure by forming a vapor of Pt(PF3)4, exposing a surface of the catalyst support to the vapor of Pt(PF3)4, purging the surface of the catalyst support with a purge gas to remove the vapor of Pt(PF3)4, exposing the surface of the catalyst support to a second reactant in gaseous form, purging the surface of the catalyst support with a purge gas to remove the second reactant, and repeating these steps to form a plurality of the Pt metal containing nanodots.

Abstract: A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: A process for forming an indium-containing film on at least part of the surface of a substrate, the process comprising (a) placing a substrate into a chamber; (b) introducing a vapor that includes an indium-containing compound into the chamber; (c) purging the chamber with a first purge gas; (d) introducing an oxygen-containing gas into the chamber; and (e) purging the chamber with a second purge gas; and (f) repeating steps (b)-(e) at a temperature of ?225° C. and ?400° C. until a desired thickness of the indium-containing film is obtained.

Abstract: The present invention provides a compound having a low melting point, enhanced volatility, and excellent thermal stability, and a method for producing a lithium-containing film. The compound is represented by the following formula (1).

Abstract: Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula: In[R1R2R3R4CpL1] or In[CpL1L2y] wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: The lanthanoid compound according to the present invention is a compound represented by the following general formula Ln(R1xCp)2(A)y or the following general formula Sm(R2xCp)2(A)y. In Ln(R1xCp)2(A)y, Ln is Nd, Eu, Dy, Tm, or Yb, R1 is independently Me, Et, nPr, iPr, nBt, sBu, iBu, or tAm, Cp is cyclopentadienyl, A is a linear or cyclic hydrocarbon containing oxygen, sulfur, phosphorus, or nitrogen, x is an integer of 2 to 3, and y is 0 to 2. In Sm(R2xCp)2(A)y, R2 is independently nPr, iPr, nBt, sBu, iBu, or tAm.

Abstract: A method of an embodiment includes (i) a step of supplying a first gas to a chamber, wherein the first gas is perfiuorotetraglyme gas, and (ii) a step of generating plasma of a second gas for etching of a porous film in order to etch the porous film at the same time as the step of supplying a first gas or after the step of supplying a first gas. Partial pressure of the first gas in the chamber or pressure of the first gas in the chamber when only the first gas is supplied to the chamber is higher than critical pressure causing capillary condensation of the first gas in the porous film and is lower than saturated vapor pressure of the first gas at a temperature of the workpiece during execution of the step of supplying a first gas.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2??Formula I, M(?O)(NR2)4??Formula II, M(?O)2(NR2)2??Formula III, M(?NR)2(OR)2??Formula IV, and M(?O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2 ??Formula I, M(=O)(NR2)4 ??Formula II, M(=O)2(NR2)2 ??Formula III, M(=NR)2(OR)2 ??Formula IV, and M(=O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: A porous film sealing method and porous film sealing material are provided to seal an object to be sealed that has a porous film. The porous film sealing method of the present invention is characterized by including a first step that supplies a first material to a treatment vessel in which is stored an object to be treated that has a porous film, and the first material includes a non-aromatic fluorocarbon having 6 or more carbon atoms.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.