Abstract: A semiconductor power module including first and second power transistors situated in parallel between first collector and first emitter strip conductors. A first connection surface of each of the power transistors is electroconductively connected to the first collector strip conductor, and a second connection surface of each of the power transistors is electroconductively connected to the first emitter strip conductor, so that a current flowing between the first collector strip conductor and the first emitter strip conductor is divided between the power transistors when the power transistors are each conductively connected via an applied control voltage. A first external power contact is directly contacted with the first collector strip conductor at a first contact area, a second external power contact is contacted with the first emitter strip conductor at a second contact area via a first connecting element, and the second contact area is positioned asymmetrically between the power transistors.

Abstract: A food treatment appliance includes a thermally insulated food treatment chamber, a refrigeration unit, a microwave generation facility configured to introduce microwaves with an associated microwave frequency into the food treatment chamber, and a low-frequency generation facility configured to introduce into the food treatment chamber low-frequency waves with a frequency which is lower than the microwave frequency.

Abstract: Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.

Abstract: The present disclosure generally relates to a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield of the magnetic recording head. The spintronic device comprises a multilayer spacer layer comprising a Cu layer in contact with a spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn. A multilayer notch comprising a CoFe layer is disposed over the spin transparent texture layer of the multilayer spacer layer and a Heusler alloy layer is disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe. The multilayer spacer layer and the multilayer notch result in the spintronic device having a high spin polarization and a reduced critical current.

Abstract: The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.

Abstract: The present disclosure generally relates to a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield of the magnetic recording head. The spintronic device comprises a multilayer spacer layer comprising a Cu layer in contact with a spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn. A multilayer notch comprising a CoFe layer is disposed over the spin transparent texture layer of the multilayer spacer layer and a Heusler alloy layer is disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe. The multilayer spacer layer and the multilayer notch result in the spintronic device having a high spin polarization and a reduced critical current.

Abstract: The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.

Abstract: The present invention relates to a method for forming fruit and vegetables by means of ultrasonic waves, to a convenience food item comprising fruit and vegetables formed in this way, and to the use of ultrasonic waves for forming fruit and vegetables.

Abstract: A magnetic element includes a first free layer, a barrier layer over the first free layer, and a second free layer over the barrier layer. The first free layer includes a first ferromagnetic bilayer and a first amorphous insertion layer (e.g., CoHf) between the first ferromagnetic bilayer. The first ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. The second free layer includes a second ferromagnetic bilayer and a second amorphous insertion layer (e.g., CoHf) between the second ferromagnetic bilayer. The second ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. Each of the first and the second amorphous insertion layer independently can be ferromagnetic or non-ferromagnetic and can have a recrystallization temperature of about 300° C. and above. The magnetic element can further include a non-ferromagnetic amorphous buffer layer and/or a non-ferromagnetic amorphous capping layer.

Abstract: The present invention relates to calcium-containing, porous, mineral materials having a sulfate content of not more than 1.5% by weight and a biopolymer content in the range of 0.001 to 5.00% by weight, each relative to the total weight of the materials, a method for producing these materials with the aid of biopolymers as stabilizers and the use of biopolymers for producing sulfate-poor calcium-containing, porous, mineral materials.

Abstract: Aspects of the present disclosure generally relate to a spintronic device for use in a magnetic media drive, a magnetoresistive random access memory device, a magnetic sensor, or a magnetic recording write head. The spintronic device comprises a multilayer structure having a negative anisotropic field and a negative spin polarization. The multilayer structure comprises a plurality of layers, each layer of the plurality of layers comprising a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first and second sublayers are alternating. The negative anisotropic field of the multilayer structure is between about ?0.5 T to about ?0.8 T, and an effective magnetization of the multilayer structure is between about 2.4 T to about 2.8 T.

Abstract: The present invention relates to a method of isolating covalently closed circular (ccc) DNA molecules from microbial cells containing the ccc DNA molecules, comprising the steps of: contacting the microbial cells with a lysing agent and moving the composition through a tube system with a flow having a Reynolds number of at least 3000 to obtain a lysing composition, incubating the lysing composition to obtain a lysate, contacting the lysate with a neutralizing solution to obtain a neutralized lysate, and further processing the neutralized lysate to obtain the ccc DNA molecules.

Abstract: A tunneling magnetoresistance (TMR) device has an improved seed layer for the lower or first ferromagnetic layer that eliminates the need for boron in the two ferromagnetic layers. The seed layer, for example a RuAl alloy, has a B2 crystalline structure with (001) texture when deposited on an amorphous pre-seed layer, meaning that the (001) plane is parallel to the surface of the TMR device substrate. The subsequently deposited first ferromagnetic layer, like a CoFe alloy, and the tunneling barrier layer, typically MgO, inherit the (001) texture of the seed layer.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: A process is disclosed for the production of hydrocarbons with removal of coke from a product stream. In a first mode, hydrocarbons and steam are subjected to steam cracking to obtain a cracked gas. The removal of coke from the steam is performed using a coke trap thus obtaining a coke-depleted cracking gas which is subjected to quench heat exchange in the first mode downstream of the coke trap, effecting cooling. Product stream is formed in the first operating mode using the cracked gas cooled in the quench heat exchange. The coke trap is emptied in a second mode using a stream extracted from a cracking furnace, bypassing the quench heat exchange, to obtain a coke stream. The coke stream in the second mode is passed to a coke collector.

Abstract: Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.

Abstract: The present invention relates to a process for the processing and/or purification of carbon black comprising the steps of: a) providing carbon black containing impurities b) providing an aqueous fluid comprising a nitrogen hydride c) providing an alkali metal hydroxide and/or an alkali metal d) contacting the mixture of step a), the fluid of step b) and the alkali metal hydroxide and/or alkali metal of step c) e) subjecting the composition obtained in step d) to an elevated temperature in the range of 80 to 240° C. and an elevated pressure in the range of 5 to 50 bar f) separating a carbonaceous solid from the composition obtained in step e). The present invention further relates to the use of a nitrogen hydride as a dispersing agent for producing and/or stabilizing an aqueous suspension.

Abstract: A magnetic element includes a first free layer, a barrier layer over the first free layer, and a second free layer over the barrier layer. The first free layer includes a first ferromagnetic bilayer and a first amorphous insertion layer (e.g., CoHf) between the first ferromagnetic bilayer. The first ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. The second free layer includes a second ferromagnetic bilayer and a second amorphous insertion layer (e.g., CoHf) between the second ferromagnetic bilayer. The second ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. Each of the first and the second amorphous insertion layer independently can be ferromagnetic or non-ferromagnetic and can have a recrystallization temperature of about 300° C. and above. The magnetic element can further include a non-ferromagnetic amorphous buffer layer and/or a non-ferromagnetic amorphous capping layer.

Abstract: Aspects of the present disclosure generally relate to a spintronic device for use in a magnetic media drive, a magnetoresistive random access memory device, a magnetic sensor, or a magnetic recording write head. The spintronic device comprises a multilayer structure having a negative anisotropic field and a negative spin polarization. The multilayer structure comprises a plurality of layers, each layer of the plurality of layers comprising a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first and second sublayers are alternating. The negative anisotropic field of the multilayer structure is between about ?0.5 T to about ?0.8 T, and an effective magnetization of the multilayer structure is between about 2.4 T to about 2.8 T.

Abstract: A magnetic element includes a first free layer, a barrier layer over the first free layer, and a second free layer over the barrier layer. The first free layer includes a first ferromagnetic bilayer and a first amorphous insertion layer (e.g., CoHf) between the first ferromagnetic bilayer. The first ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. The second free layer includes a second ferromagnetic bilayer and a second amorphous insertion layer (e.g., CoHf) between the second ferromagnetic bilayer. The second ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. Each of the first and the second amorphous insertion layer independently can be ferromagnetic or non-ferromagnetic and can have a recrystallization temperature of about 300° C. and above. The magnetic element can further include a non-ferromagnetic amorphous buffer layer and/or a non-ferromagnetic amorphous capping layer.