Abstract: The invention relates to a method and to a device for the in-situ determination of the temperature ? of a sample, in particular to a method and to a device for the surface-corrected determination of the temperature ? of a sample by means of the band-edge method. It is provided that, for the in-situ determination of the temperature ? of a sample (10) when growing a layer stack (12) in a deposition system, a surface-corrected transmission spectrum T?(?) is calculated by determining the quotient of the transmission spectrum T(?) and a correction function K(?), the correction function K(?) being calculated from a determined reflection spectrum R(?). Subsequently, the spectral position of the band-edge ?BE is determined from the transmission spectrum T?(?), and the temperature ? is determined from the spectral position of the band-edge ?BE by means of a known dependency ?(?BE).

Abstract: The present invention provides for an apparatus for measuring a curvature of a surface of a wafer in a multi-wafer epitaxial reactor.

Abstract: A flat light emitting plate, a method for calibrating a pyrometer and a method for determining the temperature of a semiconducting wafer inside a processing chamber by said pyrometer. The invention provides a method for calibrating a pyrometer by means of a cold source which is also applicable to processing chambers with a narrow slit. According to the invention, a flat light emitting plate for simulating thermal radiation is provided, comprising a main body made of a transparent material, a light emission area located on an upper surface of the light emitting plate for emitting light, at least one light source located on a lateral surface of the light emitting plate, at least one detector located on a lateral surface of the light emitting plate, and a regulating circuit for adjusting the intensity of light emitted by the light sources.

Abstract: The present invention provides for an apparatus for measuring a curvature of a surface of a wafer in a multi-wafer epitaxial reactor.