Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A method purifies a starting solid or semi-solid organic composition located in a chamber. The method includes heating the starting organic composition such that molecules of one organic molecular species sublime out of the composition and molecules of a desired organic molecular species remain in the composition. The method includes pumping the chamber during the heating step to remove sublimed organic molecules. The method includes then, heating a remaining portion of the composition at one or more higher temperatures such that molecules of the desired organic molecular species sublime from the remaining portion of the composition. A separate region of the chamber is maintained under conditions that cause deposition of sublimed molecules of the desired species during the heating a remaining portion.

Abstract: A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

Abstract: Disclosed is a field-effect switch that uses an applied field to induce superconductivity in a normally insulative switch element. The switch element comprises an intercalated crystal of C60 together with a further species such as a methylene trihalide. Using such a switch element, we have obtained field-induced superconducting transitions at temperatures well above 77K.

Abstract: The specification describes thin film transistor CMOS integrated circuits wherein the semiconductor is an ambipolar organic material. The preferred material is tetracene or pentacene. In these CMOS devices, a single homogeneous layer of tetracene or pentacene can be used in both n-type (inversion) and p-type (accumulation) devices.