Abstract: An optical particle detector including at least one channel intended to receive a fluid carrying at least one particle, and across which light rays are intended to pass such that the light rays are partially scattered by the at least one particle, a plurality of photodetectors capable of receiving said scattered light rays, wherein the detector includes at least one optical waveguide configured to collect, at least at one entrance of the waveguide, light rays that were not scattered by the at least one particle and having crossed the channel, and to reinject the unscattered light rays into the channel through at least one exit of the waveguide.

Abstract: A particle detector includes at least one resonant cavity partially formed at least by a first reflector, a second reflector disposed at a distance from the first reflector and a channel located between the first and second reflectors, the channel being intended to receive at least one fluid comprising particles and to receive at least one light radiation; and at least one detection system having at least one photodetector. The particle detector is configured so that a portion of the light radiation present in the channel escapes from the cavity throughout the second reflector and reaches the detection system, thereby enabling the at least one photodetector to detect leakage of the cavity. The second reflector is a photonic crystal membranes PCM based reflector.

Abstract: An optical particle detector including at least one channel intended to receive a fluid carrying at least one particle, and across which light rays are intended to pass such that the light rays are partially scattered by the at least one particle, a plurality of photodetectors capable of receiving said scattered light rays, wherein the detector includes at least one optical waveguide configured to collect, at least at one entrance of the waveguide, light rays that were not scattered by the at least one particle and having crossed the channel, and to reinject the unscattered light rays into the channel through at least one exit of the waveguide.

Abstract: The present invention relates to a device for controlling optical frequency (F1, F2) about a central working frequency (F0). This device comprises a vertical cavity (2) formed of two parallel and partially reflecting walls (3a, 3b), and a membrane (6) comprising at least one layer (7a, 7b) structured in the form of a photonic crystal. In this device, the two walls (3a, 3b) are separated by an optical distance substantially proportional to half the wavelength (?0) corresponding to the central working frequency (F0). The membrane (6) is integrated between the walls (3a, 3b) of the cavity (2) and devised in such a way as to exhibit a mode of optical resonance at this central working wavelength (?0). At least one layer of the device is made up of at least one portion of a material exhibiting nonlinear optical properties.

Abstract: A device for collecting light emitted by a laser source, including an optical wave guide arranged so as to collect a light signal emitted by the laser source, by coupling. The wave guide includes a loop coupled to a laser source in two coupling zones making it possible to recover optical modes circulating along the direction opposite to the required direction for the signal output from the device.

Abstract: The present invention relates to a device for controlling optical frequency (F1, F2) about a central working frequency (F0). This device comprises a vertical cavity (2) formed of two parallel and partially reflecting walls (3a, 3b), and a membrane (6) comprising at least one layer (7a, 7b) structured in the form of a photonic crystal. In this device, the two walls (3a, 3b) are separated by an optical distance substantially proportional to half the wavelength (?0) corresponding to the central working frequency (F0). The membrane (6) is integrated between the walls (3a, 3b) of the cavity (2) and devised in such a way as to exhibit a mode of optical resonance at this central working wavelength (?0). At least one layer of the device is made up of at least one portion of a material exhibiting nonlinear optical properties.

Abstract: A device for collecting light emitted by a laser source, including an optical wave guide arranged so as to collect a light signal emitted by the laser source, by coupling. The wave guide includes a loop coupled to a laser source in two coupling zones making it possible to recover optical modes circulating along the direction opposite to the required direction for the signal output from the device.

Abstract: The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.

Abstract: The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.