Abstract: In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Abstract: In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Abstract: A method of forming an electronic device includes forming an opening through a dielectric layer located over a first resistive layer, the first resistive layer having a first sheet resistance. A second resistive layer is deposited over the dielectric layer and into the opening. The second resistive layer has a second sheet resistance different from the first sheet resistance. A portion of the second resistive layer is removed, thereby forming first and second noncontiguous portions of the second resistive layer, wherein the second portion of the second resistive layer contacts the first resistive layer.

Abstract: An electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate and having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate and having a second sheet resistance that is different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Abstract: An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

Abstract: An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

Abstract: The invention relates to a semiconductor device and a method of manufacturing an electronic device. A first conductive layer (first metal interconnect layer) is deposited. There is an insulating layer (first intermetal dielectric) layer deposited. A resistive layer is deposited on top of the insulating layer and structured in order to serve as a thin film resistor. A second insulating layer (second intermetal dielectric) is then deposited on top of the resistive layer. A first opening is etched into the insulating layers (first and second intermetal dielectric) down to the first conductive layer. A second opening is etched into the insulating layers (first and second intermetal dielectrics) down to the first conductive layer. A cross-sectional plane of the second opening is arranged such that it at least partially overlaps the resistive layer of the thin film resistor in a first direction.

Abstract: The invention relates to a semiconductor device and a method of manufacturing an electronic device. A first conductive layer (first metal interconnect layer) is deposited. There is an insulating layer (first intermetal dielectric) layer deposited. A resistive layer is deposited on top of the insulating layer and structured in order to serve as a thin film resistor. A second insulating layer (second intermetal dielectric) is then deposited on top of the resistive layer. A first opening is etched into the insulating layers (first and second intermetal dielectric) down to the first conductive layer. A second opening is etched into the insulating layers (first and second intermetal dielectrics) down to the first conductive layer. A cross-sectional plane of the second opening is arranged such that it at least partially overlaps the resistive layer of the thin film resistor in a first direction.

Abstract: The invention relates to a semiconductor device and a method of manufacturing an electronic device. A first conductive layer (first metal interconnect layer) is deposited. There is an insulating layer (first intermetal dielectric) layer deposited. A resistive layer is deposited on top of the insulating layer and structured in order to serve as a thin film resistor. A second insulating layer (second intermetal dielectric) is then deposited on top of the resistive layer. A first opening is etched into the insulating layers (first and second intermetal dielectric) down to the first conductive layer. A second opening is etched into the insulating layers (first and second intermetal dielectrics) down to the first conductive layer. A cross-sectional plane of the second opening is arranged such that it at least partially overlaps the resistive layer of the thin film resistor in a first direction.

Abstract: The invention relates to a semiconductor device and a method of manufacturing an electronic device. A first conductive layer (first metal interconnect layer) is deposited. There is an insulating layer (first intermetal dielectric) layer deposited. A resistive layer is deposited on top of the insulating layer and structured in order to serve as a thin film resistor. A second insulating layer (second intermetal dielectric) is then deposited on top of the resistive layer. A first opening is etched into the insulating layers (first and second intermetal dielectric) down to the first conductive layer. A second opening is etched into the insulating layers (first and second intermetal dielectrics) down to the first conductive layer. A cross-sectional plane of the second opening is arranged such that it at least partially overlaps the resistive layer of the thin film resistor in a first direction.