Abstract: A high-voltage power converter with a high-side switch coupled with a high-voltage input and a high-side switch control coupled with the high-side switch are presented. The high-side switch control drives the high-side switch on and off. There is a low-side switch coupled via an output node to the high-side switch. The low-side switch is on when the high-side switch is off and vice versa. A supply capacitor is coupled with a low-voltage supply terminal. The high-side switch control to provides a supply voltage for the high-side switch control. A communication module is coupled with the high-side switch control to provide a bidirectional communication between the high-side switch control and a control system that operates in a low-voltage domain, wherein the communication to and from the high-side switch control is enabled when the low-side switch is on and the high-side switch is off.

Abstract: The present document describes a level-shifter circuit and method to transmit data from a high-voltage domain to a low-voltage domain. The level-shifter circuit has a first current path with a first current control unit to set a first current based on a high-voltage data signal in the high-voltage domain; and a second current path with a second current control unit to set a second current based on the high-voltage data signal. Furthermore, the circuit has an isolation unit to transfer the first current and the second current from the high-voltage domain to the low-voltage domain; and a current comparator unit to compare the first current with the second current to provide a low-voltage data signal in the low-voltage domain, which corresponds to the high-voltage data signal.

Abstract: A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.

Abstract: A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.

Abstract: An overvoltage protection circuit for a transistor device is presented. The overvoltage protection circuit comprises a first pin coupled to a gate terminal of the transistor device, an electrostatic discharge protection circuit coupled between a second pin and a source terminal of the transistor device, a first diode coupled between the first pin and the second pin, and a second diode coupled in parallel to the first diode between the first pin and the second pin. The forward direction of the first diode is opposite to the forward direction of the second diode. In addition, A method of measuring a gate leakage current of a transistor device and a method of bonding a transistor device coupled to such an overvoltage protection circuit are presented.

Abstract: An overvoltage protection circuit for a transistor device is presented. The overvoltage protection circuit comprises a first pin coupled to a gate terminal of the transistor device, an electrostatic discharge protection circuit coupled between a second pin and a source terminal of the transistor device, a first diode coupled between the first pin and the second pin, and a second diode coupled in parallel to the first diode between the first pin and the second pin. The forward direction of the first diode is opposite to the forward direction of the second diode. In addition, A method of measuring a gate leakage current of a transistor device and a method of bonding a transistor device coupled to such an overvoltage protection circuit are presented.

Abstract: A half bridge circuit and a method for its operation are presented. The half bridge circuit contains a high-side switch, a latch for providing a drive signal for the high-side switch, a first transistor device acting as a level shifter for shifting a voltage level at an input of the latch. The first transistor device is coupled between a supply voltage level and ground, and the voltage level at the input of the latch is shifted in accordance with a current that flows through the first transistor device. A second transistor device is coupled between the supply voltage level and ground, in parallel to the first transistor device. There is a current mirror for mirroring a current that flows through the second transistor device. There is a circuit path for feeding the mirrored current to an intermediate node between the supply voltage level and the first transistor device.

Abstract: A method and apparatus for limiting or preventing electromagnetic interferences in a switching converter are presented. In particular, a power circuit provided with an active electromagnetic interference filter is presented. There is an electromagnetic interference EMI reduction circuit for use with a switching converter. This EMI reduction circuit has a current source and is adapted to regulate a voltage across the current source to provide a current having a constant average value. The switching converter is adapted to provide a converter current, and the current source constant average value may be substantially equal to an average value of the converter current. The circuit has a variable resistance; and an adjuster adapted to adjust the variable resistance based on the converter current. The adjuster may have a comparator, which is adapted to compare a voltage value at a terminal of a transistor switch, and a reference value.

Abstract: A circuit and method for regulating an internal power supply of a switching converter is presented. A switching converter with a depletion mode power switch coupled to an enhancement mode power switch via a switching node and an energy storing element coupled to the depletion mode power switch is provided. The energy storing element may be adapted to provide energy to the switching converter. For instance, the energy storing element may be a capacitor. Optionally, the switching converter may comprise an inductor coupled to the depletion mode transistor, the inductor being adapted to provide an inductor current.

Abstract: A method and apparatus for driving a power stage is presented. In particular, the power stage is a half-bridge. In the method, there is a first power switch coupled to a second power switch via a switching node. The method steps include sensing a first control-terminal voltage of one of the first power switch and the second power switch and turning on the first power switch based on the first control-terminal voltage and sensing a second control-terminal voltage of one of the first power switch and the second power switch and turning on the second power switch based on the second control-terminal voltage. Optionally, the first power switch is turned on when the first control-terminal voltage has reached a first threshold value, and the second power switch is turned on when the second control-terminal voltage has reached a second threshold value.