Abstract: The present disclosure relates to beam writing technologies. In detail, a technique for compensating process artifacts of a mask layout transfer process is described. A method implementation of that technique comprises modeling, for a target mask layout, an intensity profile resulting from exposing a resist on a masking layer by beam writing. Further, a contour and a profile of the exposed resist after development are modeled from the intensity profile. Then, a geometry of the masking layer after etching is modeled from the resist contour and the resist profile. For any deviation of the modeled geometry from the target mask layout, an adjustment compensating the deviation can thus be determined.

Abstract: The present disclosure relates to beam writing technologies. In detail, a technique for compensating process artifacts of a mask layout transfer process is described. A method implementation of that technique comprises modeling, for a target mask layout, an intensity profile resulting from exposing a resist on a masking layer by beam writing. Further, a contour and a profile of the exposed resist after development are modeled from the intensity profile. Then, a geometry of the masking layer after etching is modeled from the resist contour and the resist profile. For any deviation of the modeled geometry from the target mask layout, an adjustment compensating the deviation can thus be determined.