Abstract: In an interface structure comprising a first assembly and a second assembly wherein the first assembly includes a cavity having a truncated cone-like section, a stop surface effective in the axial direction and a second assembly including a trunnion with a truncated cone-like section for abutment on the truncated cone-like sleeve section of the first assembly and an abutment surface for contacting the abutment surface of the first assembly, between the cavity and the trunnion a bayonet-like locking structure is provided in the interface structure whereby handling with a high repetition accuracy with regard to the position of the assemblies to be joined is ensured.

Abstract: In an interface structure comprising a first assembly and a second assembly wherein the first assembly includes a cavity having a truncated cone-like section, a stop surface effective in the axial direction and a second assembly including a trunnion with a truncated cone-like section for abutment on the truncated cone-like sleeve section of the first assembly and an abutment surface for contacting the abutment surface of the first assembly, between the cavity and the trunnion a bayonet-like locking structure is provided in the interface structure whereby handling with a high repetition accuracy with regard to the position of the assemblies to be joined is ensured.

Abstract: The invention relates to a lighting device (1) for a motor vehicle headlight, wherein the lighting device (1) has at least one reflector (10, 11, 12, 13), and assigned to the at least one reflector (10, 11, 12, 13) is at least one light source (20, 21, 22, 23), and light from the at least one light source (20, 21, 22, 23) is radiated into a region in front of the lighting device (1) by means of the reflector (10, 11, 12, 13) in order to form a light distribution or a part of a light distribution. The lighting device (1) has at least one, preferably exactly one reflector support (30), and the at least one reflector (10, 11, 12, 13) is fixedly attached to the at least one reflector support (30), and the at least one light source (20, 21, 22, 23) is arranged on at least one light source support (40, 41, 42, 43), and the at least one light source support (40, 41, 42, 43) is movably mounted on the reflector support (30) and can be fixed in a defined position relative to the reflector support (30).

Abstract: The invention relates to a lighting device (1) for a motor vehicle headlight, wherein the lighting device (1) has at least one reflector (10, 11, 12, 13), and assigned to the at least one reflector (10, 11, 12, 13) is at least one light source (20, 21, 22, 23), and light from the at least one light source (20, 21, 22, 23) is radiated into a region in front of the lighting device (1) by means of the reflector (10, 11, 12, 13) in order to form a light distribution or a part of a light distribution. The lighting device (1) has at least one, preferably exactly one reflector support (30), and the at least one reflector (10, 11, 12, 13) is fixedly attached to the at least one reflector support (30), and the at least one light source (20, 21, 22, 23) is arranged on at least one light source support (40, 41, 42, 43), and the at least one light source support (40, 41, 42, 43) is movably mounted on the reflector support (30) and can be fixed in a defined position relative to the reflector support (30).

Abstract: A circuit includes a sensor delivering a charge, a capacitor non-volatilely storing the charge, and a read and reset circuit reading out the stored charge. The capacitor has further connection terminals connected to the read and reset circuit and in parallel with the sensor terminals, and a ferroelectric storage dielectric intermittently connected to the sensor. The sensor can be a photodiode, a phototransistor, a Hall sensor, or a thermoelement. A switch can be connected between one of the further terminals and one of the sensor terminals. Preferably, the switch is a transistor and a drive circuit drives it. The sensor and the capacitor are formed in a semiconductor body. During a storage procedure, time periods during which the switch is on are coordinated with the sensor and/or capacitor to keep an electrical field present between the further terminals below a maximum value at which the ferroelectric dielectric saturates.

Abstract: A vision test apparatus includes a light occluding casing and viewer connected to the casing which comprises a front lens. A mirror is rotatably mounted to the inside of the casing behind the front lens. An image display is movably mounted to the inside of the casing. An auxiliary lens is movably mounted to the inside of the casing and in alignment between the image display and the mirror whereby an image that is displayed on the image display passes through the auxiliary lens reflects off of the mirror and passes through the front lens.

Abstract: Deep submicran mosfets with defect enhanced CoSi2 formation and improved silicided junctions. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.

Abstract: An method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.

Abstract: A method of making a MOS field effect transistor having shallow source and drain regions with improved breakdown and leakage characteristics includes the step of forming a layer of a metal silicide along a surface of a body of silicon at each side of a gate which is on an insulated from the surface. A high concentration of an impurity of a desired conductivity type is implanted only into the metal silicide layers. A lower concentration of the impurity is then implanted through the metal silicide layers and into the body just beneath the metal silicide layers. The body is then annealed at a temperature which drives the impurities from the metal silicide layer into the body to form the junctions.

Abstract: A double well CMOS process wherein the wells are separated by insulating trenches introduced into a semiconductor substrate, the position of the insulating trench along the isotropic under-etching in a silicon oxide layer employed together with a silicon nitride layer used as a masking layer in the implantation of the well which is first implanted. The trench itself is produced by anisotropic etching with silicon oxide masks used in the well implantations as etching masks. The trench width is defined with the isotropic etching and the trench depth is defined by the anisotropic etching. In this method, both well implantations and the trench etching are carried out with only one photo-technique. The implantation of the second well and the trench etching are self-adjusting. As a result, minimum spacings between the active zones are provided, and a space saving design is possible. The method is used in LSI CMOS processes.

Abstract: A light waveguide coupling device which is inserted at regular intervals along the light wave transmission link with each coupling device for each direction of transmission having a channel having a transducer module for converting optical signals into electrical signals, a regenerating amplifier to amplify the electrical signals and a transducer module for converting electrical signals back into optical signals for further transmission characterized by at least one external electrical connection terminal for each channel so that a remote control element can be connected into the waveguide system at the coupling device.