Abstract: A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.

Abstract: A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.

Abstract: A microcircuit integrating a waveguide with a rectangular cross-section, the microcircuit including a first chip and a second chip assembled on each other, the waveguide being located in a junction zone between chips and extending in parallel to the chips, the waveguide including a first conductive plate located on the side of the first chip and parallel to the first chip, and a second conductive plate, located on the side of the second chip and parallel to the second chip, the waveguide being laterally delimited on one and the other side of the waveguide by one or more electrical connecting elements electrically connecting the first chip to the second chip.

Abstract: An energy storage device includes a substrate having a portion that is optically transparent in a predefined range of wavelengths, and at least one electrochemical energy storage system comprising, as from a face of the transparent portion, a stack having successively a first current collector, a first electrode, an electrolyte, a second electrode and a second current collector, the stack being covered partially by a cover characterised in that wherein at least one part of the cover has a coefficient of light absorbance greater than or equal to 80%, and preferably greater than 90%.

Abstract: A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.

Abstract: The present invention relates to a method for producing a microelectronic device, successively including: forming a first current collector on a face of a substrate; forming a first electrode on, and in electrical continuity with, a portion of the first current collector; heat treating the first electrode wherein: forming the first collector comprises forming a first collector layer on the face of the substrate and forming a second collector layer covering at least one part to produce a covered part of the first collector layer and having a first face in contact with the first electrode, the second collector layer is configured to protect the covered part during the heat treating, such that the heat treating does not oxidise the covered part.

Abstract: A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.

Abstract: An energy storage device, includes a substrate having a portion that is optically transparent in a predefined range of wavelengths, and at least one electrochemical energy storage system comprising, as from a face of the transparent portion, a stack having successively a first current collector, a first electrode, an electrolyte, a second electrode and a second current collector, the stack being covered partially by a cover characterised in that wherein at least one part of the cover has a coefficient of light absorbance greater than or equal to 80%, and preferably greater than 90%.

Abstract: The present invention relates to a method for producing a microelectronic device successively comprising: a formation of a first current collector on a face of a substrate; a formation of a first electrode (14) on, and in electrical continuity with, a portion of the first current collector; a heat treatment configured to treat the first electrode (14) characterised by the fact that: the formation of the first collector comprises a formation of a first collector layer (12) on the face of the substrate and a formation of a second collector layer (13) covering at least one part, called covered part, of the first collector layer (12) and having a first face in contact with the first electrode (14), the second collector layer (13) is configured to protect the covered part during the heat treatment, such that the heat treatment does not oxidise said covered part.

Abstract: The electrochemical device includes a first stack of solid thin layers formed on a substrate, the first stack forming a battery and including: a first electrode and a second electrode separated by a first electrolyte layer, a first current collector in contact with the first electrode, a second current collector in contact with the second electrode. The device includes a second stack forming a thermometer. The second stack includes a third current collector and a fourth current collector separated by a second electrolyte layer forming a resistive layer, the second electrolyte layer being ionically dissociated from the first electrolyte layer. The device includes a control circuit configured to measure the resistance of the resistive layer.

Abstract: The present invention relates to a method for producing a microelectronic device successively comprising: a formation of a first current collector on a face of a substrate; a formation of a first electrode (14) on, and in electrical continuity with, a portion of the first current collector; a heat treatment configured to treat the first electrode (14) characterised by the fact that: the formation of the first collector comprises a formation of a first collector layer (12) on the face of the substrate and a formation of a second collector layer (13) covering at least one part, called covered part, of the first collector layer (12) and having a first face in contact with the first electrode (14), the second collector layer (13) is configured to protect the covered part during the heat treatment, such that the heat treatment does not oxidise said covered part.

Abstract: The present invention relates to a method for producing a microelectronic device, successively including: forming a first current collector on a face of a substrate; forming a first electrode on, and in electrical continuity with, a portion of the first current collector; heat treating the first electrode wherein: forming the first collector comprises forming a first collector layer on the face of the substrate and forming a second collector layer covering at least one part to produce a covered part of the first collector layer and having a first face in contact with the first electrode, the second collector layer is configured to protect the covered part during the heat treating, such that the heat treating does not oxidise the covered part.

Abstract: The electrochemical device includes a first stack of solid thin layers formed on a substrate, the first stack forming a battery and including: a first electrode and a second electrode separated by a first electrolyte layer, a first current collector in contact with the first electrode, a second current collector in contact with the second electrode. The device includes a second stack forming a thermometer. The second stack includes a third current collector and a fourth current collector separated by a second electrolyte layer forming a resistive layer, the second electrolyte layer being ionically dissociated from the first electrolyte layer. The device includes a control circuit configured to measure the resistance of the resistive layer.

Abstract: A solar radiation absorber element for a thermal concentrating solar power plant is achieved by forming a selective coating on an outer surface of a substrate made from stainless steel, chosen from stainless steels presenting an aluminum content of more than 0.5% by weight. Formation of the selective coating includes a surface treatment step of the substrate, by polishing, and a heat treatment step of the substrate, in an oxidizing atmosphere, in a temperature range included between 550° C. and 650° C. The heat treatment in particular enables at least one intrinsically selective superficial thin layer to be formed on the outer surface of the substrate.

Abstract: An electrochromic device including an electrochromic stack and a support, the electrochromic stack successively including: a first current collector; a first electrochromic electrode; an electrolyte; a second electrochromic electrode; a second current collector. The support and the electrochromic stack are separated by a dielectric layer and a heating system in contact with the support. Further, the heating system is sized to modify at least one of the optical characteristics of the electrochromic device.

Abstract: An electrochromic device including a substrate, an electrolyte placed between a first optically-active electrochromic electrode and a second optically-passive electrochromic electrode, and a quantity X of cations. The first electrode is capable of storing a quantity of cations equal to Y while the second electrode is capable of storing a quantity of cations equal to Z. The first electrode and the second electrode are respectively associated with a first current collector and with a second current collector. The device includes a quantity of cations X such that Y<X<0.30 Z.

Abstract: An electrochromic device including an electrochromic stack and a support, the electrochromic stack successively including: a first current collector; a first electrochromic electrode; an electrolyte; a second electrochromic electrode; a second current collector. The support and the electrochromic stack are separated by a dielectric layer and a heating system in contact with the support. Further, the heating system is sized to modify at least one of the optical characteristics of the electrochromic device.

Abstract: An electrochromic device including a substrate, an electrolyte placed between a first optically-active electrochromic electrode and a second optically-passive electrochromic electrode, and a quantity X of cations. The first electrode is capable of storing a quantity of cations equal to Y while the second electrode is capable of storing a quantity of cations equal to Z. The first electrode and the second electrode are respectively associated with a first current collector and with a second current collector. The device includes a quantity of cations X such that Y<X<0.30 Z.

Abstract: A radio-frequency device comprises magneto-dielectric elements. At least one of these elements comprises a composite thin film. This film comprises a magnetic material offering permeability above 10 at 1 GHz and a dielectric material offering permittivity above 10 at 1 GHz.

Abstract: A solar radiation absorber element for a thermal concentrating solar power plant is achieved by forming a selective coating on an outer surface of a substrate made from stainless steel, chosen from stainless steels presenting an aluminium content of more than 0.5% by weight. Formation of the selective coating includes a surface treatment step of the substrate, by polishing, and a heat treatment step of the substrate, in an oxidizing atmosphere, in a temperature range included between 550° C. and 650° C. The heat treatment in particular enables at least one intrinsically selective superficial thin layer to be formed on the outer surface of the substrate.