Patents by Inventor Christophe Lachaud
Christophe Lachaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240124938Abstract: The present invention relates to the field of oncology. laboratory tools and methods, and especially anti-tumor DNA crosslinking agents. Most patients with advanced solid tumors develop resistance to chemotherapy due to the ability of cancer cells to repair or tolerate sustained DNA damages. The inventors showed that the compounds according to the present invention allow the detection and visualization of alkylated DNA damages induced by PBDs without altering their DNA crosslinking ability. This enables the study of the effect and properties of PBDs. In particular, the present invention relates new derivates of PBD molecules and their synthesis. The present invention also relates to a method for visualizing DNA crosslinking: to a method for assessing the resistance of a tumor to a crosslinking agent and to a method for identifying a molecule or treatment for improving the efficiency of a crosslinking agent.Type: ApplicationFiled: October 16, 2020Publication date: April 18, 2024Inventors: Christophe LACHAUD, Sébastien COMBES, Sébastien ABEL, Gilles AUDOLY, Sara BERRADA
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Patent number: 10217629Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.Type: GrantFiled: January 29, 2018Date of Patent: February 26, 2019Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Publication number: 20180151354Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.Type: ApplicationFiled: January 29, 2018Publication date: May 31, 2018Inventors: Christian DUSSARRAT, Nicolas BLASCO, Audrey PINCHART, Christophe LACHAUD
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Patent number: 9911590Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.Type: GrantFiled: January 17, 2017Date of Patent: March 6, 2018Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Publication number: 20170125242Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.Type: ApplicationFiled: January 17, 2017Publication date: May 4, 2017Inventors: Christian DUSSARRAT, Nicolas BLASCO, Audrey PINCHART, Christophe LACHAUD
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Patent number: 9583335Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.Type: GrantFiled: February 24, 2014Date of Patent: February 28, 2017Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Publication number: 20150232876Abstract: The invention relates to improving the response of a plant to lipochitooligosaccharidic Nod and Myc-LCO factors, by means of the expression, in the plant, of a polypeptide which has a sequence homology with the extracellular domain of the LysM-motif-containing receptor kinase LYR3 in Medicago truncatula and which is capable of binding to lipochitooligosaccharides with an increased affinity.Type: ApplicationFiled: August 30, 2013Publication date: August 20, 2015Applicants: INSTITUT NATIONAL DE LA RECHERCHE AGRONOMIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE PAUL SABATIER (TOULOUSE III)Inventors: Jean-Jacques Bono, Judith Fliegmann, Christophe Lachaud, Julie Cullimore, Marie Cumener, Virginie Gasciolli, Benoit Lefebvre, Nikita Malkov, Charles Rosenberg
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Patent number: 8853075Abstract: Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.Type: GrantFiled: February 13, 2009Date of Patent: October 7, 2014Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Satoko Gatineau, Christian Dussarrat, Christophe Lachaud, Nicolas Blasco, Audrey Pinchart, Ziyun Wang, Jean-Marc Girard, Andreas Zauner
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Publication number: 20140242812Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.Type: ApplicationFiled: February 24, 2014Publication date: August 28, 2014Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges ClaudeInventors: Christian DUSSARRAT, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Patent number: 8668957Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectricType: GrantFiled: March 16, 2007Date of Patent: March 11, 2014Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Publication number: 20130330936Abstract: A method of forming an Al2O3/SiO2 stack comprising injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of: BDEAS Bis(diethylamino)silane SiH2(NEt2)2, BDMAS Bis(dimethylamino)silane SiH2(NMe2)2, BEMAS Bis(ethylmethylamino)silane SiH2(NEtMe)2, DIPAS (Di-isopropylamido)silane SiH3(NiPr2), DTBAS (Di tert-butylamido)silane SiH3(NtBu2); injecting into the reaction chamber an oxygen source selected in the list: oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma; and injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound selected in the list: Al(Me)3, Al(Et)3, Al(Me)2(OiPr), Al(Me)2(NMe)2 or Al(Me)2(NEt)2.Type: ApplicationFiled: December 15, 2011Publication date: December 12, 2013Applicants: TECHNISCHE UNIVERSITEIT EINDHOVEN, L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDEInventors: Christophe Lachaud, Alain Madec, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Patent number: 8470402Abstract: Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf) or (Zr); and M2 represents a metal atom. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, or Hf(tBu2Cp)(NMe2)3.Type: GrantFiled: January 20, 2011Date of Patent: June 25, 2013Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Publication number: 20110275215Abstract: A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert-butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.Type: ApplicationFiled: February 13, 2009Publication date: November 10, 2011Inventors: Satoko Gatineau, Christian Dussarrat, Christophe Lachaud, Nicolas Blasco, Audrey Pinchart, Ziyun Wang, Jean-Marc Girard, Andreas Zauner
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Publication number: 20110207337Abstract: The application relates to a method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (M11-aM2a)ObNc, wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3.Type: ApplicationFiled: January 20, 2011Publication date: August 25, 2011Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Geroges ClaudeInventors: Christian DUSSARRAT, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
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Publication number: 20090203222Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z,??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dType: ApplicationFiled: March 16, 2007Publication date: August 13, 2009Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud