Abstract: Improved fabrication processes for manufacturing GeOI type wafers are disclosed. In an implementation, a method for fabricating a germanium on insulator wafer includes providing a source substrate having a surface, at least a layer of germanium and a weakened area. The weakened area is located at a predetermined depth in the germanium layer of the source substrate and is generally parallel to the source substrate surface. The technique also includes providing a germanium oxynitride layer in or on the source substrate, bonding the source substrate surface to a handle substrate to form a source-handle structure, and detaching the source substrate from the source-handle structure at the weakened area of the source substrate to create the germanium on insulator wafer having, as a surface, a useful layer of germanium.

Abstract: A method for direct molecular adhesion of an electronic compound (6) on a polymer (4) is described. The polymer (4) is coated with a bonding layer (5), for example silicon oxide, which enables the problems caused by the presence of hydrocarbons to be overcome. The method makes it possible to produce adhesive-free three-dimensional structures (10).

Abstract: Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.

Abstract: Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.

Abstract: Improved fabrication processes for manufacturing GeOI type wafers are disclosed. In an implementation, a method for fabricating a germanium on insulator wafer includes providing a source substrate having a surface, at least a layer of germanium and a weakened area. The weakened area is located at a predetermined depth in the germanium layer of the source substrate and is generally parallel to the source substrate surface. The technique also includes providing a germanium oxynitride layer in or on the source substrate, bonding the source substrate surface to a handle substrate to form a source-handle structure, and detaching the source substrate from the source-handle structure at the weakened area of the source substrate to create the germanium on insulator wafer having, as a surface, a useful layer of germanium.

Abstract: Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.

Abstract: A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.