Abstract: A semiconductor wafer (1a, 1b) including a plurality of chips (2) and a separation zone (3) spacing the semiconductor chips (2) from each other in this wafer (1a, 1b), such a separation zone (3) extending from a front face (4a) to an opposite backside face (4b) of this wafer (1a, 1b), this separation zone (3) includes a scribe line (6) configured to be diced using plasma etching and an inlet area (13) of this scribe line (6), the inlet (13) being delimitated by free ends of plasma etch-resistant material layers (9) extending each from a peripheral wall (20) of a functional part (18) of a chip (2) into the scribe line (6) by overlapping a top of a seal ring (7) of this chip (2).

Abstract: A device (1) for coating a substrate (4) with nanometric sized particles, wherein the device comprises: a plurality of aerodynamic lenses able to product a jet (3) of nanometric sized particles, each of the aerodynamic lenses having a longitudinal axis, the aerodynamic lenses being arranged so that the various longitudinal axes are parallel and oriented in a first direction (X) defining the direction of propagation of the jet and in the form of at least two columns (9, 10) offset from each other in a second direction (Y) orthogonal to the first direction, where the first and the second column each comprise at least one of the aerodynamic lenses, the at least one of the aerodynamic lenses of the first column also being offset relative to the at least one of the aerodynamic lenses of the second column in a third direction (Z) that is both orthogonal to the first direction and to the second direction.

Abstract: A device (1) for coating a substrate (4) with nanometric sized particles, wherein the device (1) comprises: a plurality of means (2a, 2b, 2c, 2d) called production means, each able to product a jet (3) of nanometric sized particles, each of said production means having a longitudinal axis, the production means being arranged so that the various longitudinal axes are parallel and oriented in a first direction (X) defining the direction of propagation of the jet and in the form of at least two columns (9, 10) offset from each other in a second direction (Y) orthogonal to the first direction (X), where the first (9) and the second column (10) each comprise at least one production means, said at least one production means (2a, 2b, 2c, 2d) of the first column (9) also being offset relative to said at least one production means (2a, 2b, 2c, 2d) of the second column (10) in a third direction (Z) that is both orthogonal to the first direction (X) and to the second direction (Y).

Abstract: The invention relates to a system (1) for securing a rail (2) by pinching the rail, comprising: a spring (3) bearing on the rail base (2a), a means (5) for securing the spring to a structure (4) carrying the rail, characterized in that the spring means bears against a device (6) for adjusting the spring comprising: a means (7) for supporting the spring, intended to be in contact with an edge of the rail, the spring being unable to move in translation with the support means, a means (8) for anchoring to the structure supporting the rail, a means (9) for adjusting the position of the support means with respect to the anchoring means.

Abstract: The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.

Abstract: The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.

Abstract: Service applications are provided on multiple types of devices with different execution contexts. A smart card stores the application description, and processes it to install an adapted configuration of the application for whatever device it is inserted in. Smart cards are compatible with many devices, as well as being small, resistant, and tamper-proof. In addition to security features, their processing capacities can be used to at least partially treat the abstract descriptions of the applications in order to produce concrete descriptions adapted to the execution context.

Abstract: Service applications are provided on multiple types of devices with different execution contexts. A smart card stores the application description, and processes it to install an adapted configuration of the application for whatever device it is inserted in. Smart cards are compatible with many devices, as well as being small, resistant, and tamper-proof. In addition to security features, their processing capacities can be used to at least partially treat the abstract descriptions of the applications in order to produce concrete descriptions adapted to the execution context.