Abstract: An apparatus includes a reconfigurable spatial light modulator capable of spatially modulating an incident wavefront responsive to an image formed on the modulator. A light source is configured to direct a coherent illumination light beam towards the modulator such that the modulator produces a modulated outgoing light beam therefrom. A filter is configured to spatially filter a light pattern formed by the outgoing light beam on a plane to selectively transmit light from a plurality of diffraction peaks therein.

Abstract: A representative embodiment of the invention provides an infrared (IR) imaging system adapted to (i) convert an IR image of an object into mechanical displacements of a plurality of movable plates, (ii) use the mechanical displacements to impart a corresponding spatial phase modulation pattern onto a beam of visible light, and (iii) apply spatial filtering to convert the spatial phase modulation pattern into a visible image of the object.

Abstract: An apparatus includes a thermoelectric cooler having a first set of one or more metal electrodes, a second set of one or more metal electrodes, and one or more doped semiconductor members. Each member physically joins a corresponding one electrode of the first set to a corresponding one electrode of the second set. Each member has a cross-sectional area that increases along a path from the one metal electrode of the first set to the one metal electrode of the second set.

Abstract: The present invention provides an optical waveguide modulator. In one embodiment, the optical waveguide modulator includes a semiconductor planar optical waveguide core and doped semiconductor connecting paths located adjacent opposite sides of the core and capable of applying a voltage across the core. The optical waveguide core and connecting paths form a structure having back-to-back PN semiconductor junctions. In another embodiment, the optical waveguide modulator includes a semiconductor optical waveguide core including a ridge portion wherein the ridge portion has at least one PN semiconductor junction located therein. The optical waveguide modulator also includes one or more doped semiconductor connecting paths located laterally adjacent the ridge portion and capable of applying a voltage to the ridge portion.

Abstract: A representative embodiment of the invention provides an infrared (IR) imaging system adapted to (i) convert an IR image of an object into mechanical displacements of a plurality of movable plates, (ii) use the mechanical displacements to impart a corresponding spatial phase modulation pattern onto a beam of visible light, and (iii) apply spatial filtering to convert the spatial phase modulation pattern into a visible image of the object.

Abstract: A representative embodiment of the invention provides an infrared (IR) detector having a movable plate supported at an offset distance from a substrate by a suspension arm. In response to a temperature difference between the plate and the substrate generated by the incident IR radiation, the suspension arm deforms and changes the offset distance for the plate. In one embodiment, the suspension arm has three rod-shaped bimorph transducers that lie within a plane that is parallel to the substrate. The transducers are also parallel to one another, with the transducer that is attached to an anchor of the suspension arm being located between the two transducers that are attached to the plate.

Abstract: An apparatus includes a reconfigurable spatial light modulator capable of spatially modulating an incident wavefront responsive to an image formed on the modulator. A light source is configured to direct a coherent illumination light beam towards the modulator such that the modulator produces a modulated outgoing light beam therefrom. A filter is configured to spatially filter a light pattern formed by the outgoing light beam on a plane to selectively transmit light from a plurality of diffraction peaks therein.

Abstract: A representative embodiment of the invention provides an infrared (IR) detector having a movable plate supported at an offset distance from a substrate by a suspension arm. In response to a temperature difference between the plate and the substrate generated by the incident IR radiation, the suspension arm deforms and changes the offset distance for the plate. In one embodiment, the suspension arm has three rod-shaped bimorph transducers that lie within a plane that is parallel to the substrate. The transducers are also parallel to one another, with the transducer that is attached to an anchor of the suspension arm being located between the two transducers that are attached to the plate.

Abstract: The present invention provides an optical waveguide modulator. In one embodiment, the optical waveguide modulator includes a semiconductor planar optical waveguide core and doped semiconductor connecting paths located adjacent opposite sides of the core and capable of applying a voltage across the core. The optical waveguide core and connecting paths form a structure having back-to-back PN semiconductor junctions. In another embodiment, the optical waveguide modulator includes a semiconductor optical waveguide core including a ridge portion wherein the ridge portion has at least one PN semiconductor junction located therein. The optical waveguide modulator also includes one or more doped semiconductor connecting paths located laterally adjacent the ridge portion and capable of applying a voltage to the ridge portion.

Abstract: An apparatus includes a thermoelectric cooler having a first set of one or more metal electrodes, a second set of one or more metal electrodes, and one or more doped semiconductor members. Each member physically joins a corresponding one electrode of the first set to a corresponding one electrode of the second set. Each member has a cross-sectional area that increases along a path from the one metal electrode of the first set to the one metal electrode of the second set.

Abstract: Apparatus include a substrate having a top surface, a housing having an inner surface, and a joint located between the housing and the substrate. The top and inner surfaces are located to form a cavity between the housing and the substrate. The joint is located to seal the cavity. The apparatus includes a micro-electronic structure that is exposed to the cavity and is located between the substrate and housing. The apparatus also includes a dielectric layer located over the substrate and electrical feedthroughs that traverse the joint and connect to the micro-electronic structure. Portions of the electrical feedthroughs that traverse the joint are located in trenches in the dielectric layer. The electrical feedthroughs have a density along part of the joint of at least 10 per millimeter.

Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.

Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.

Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.

Abstract: A lithium niobate-based electro-optic device is formed to include a parylene conformal coating layer, as a sealant against moisture. The use of parylene (preferably, parylene-C) has been found to form an acceptable moisture vapor barrier without the need for additional hermetic packaging of the electro-optic device.

Abstract: A lithium niobate-based electro-optic device is formed to include a parylene conformal coating layer, as a sealant against moisture. The use of parylene (preferably, parylene-C) has been found to form an acceptable moisture vapor barrier without the need for additional hermetic packaging of the electro-optic device.

Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.

Abstract: A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.