Abstract: In accordance with one aspect of the present invention, a MEMS switch is provided. The MEMS switch includes a substrate, a first and a second actuating element electrically coupled together, an anchor mechanically coupled to the substrate and supporting at least one of the first and second actuating elements, and a gate driver configured to actuate the first and second actuating elements.

Abstract: A method of actuating a valve, comprises operatively coupling the valve with an electroosmotic pump; flowing a fluid through the electroosmotic pump; and generating a fluidic pressure of at least 0.75 PSI to actuate the valve, wherein the electroosmotic pump comprises one or more thin, porous, positive electroosmotic membranes and one or more thin porous, negative electroosmotic membranes; a plurality of electrodes comprising cathodes and anodes, and a power source; wherein each of the positive and negative electroosmotic membranes are disposed alternatively and wherein at least one of the cathodes is disposed on one side of one of the membranes and at least one of the anodes is disposed on the other side of the membrane and wherein at least one of the cathodes or anodes is disposed between a positive and a negative electroosmotic membrane.

Abstract: An electroosmotic pump comprises a plurality of membranes comprising one or more positive electroosmotic membranes and one or more negative electroosmotic membranes, a plurality of electrodes comprising cathodes and anodes, and a power source. Each of the positive electroosmotic membranes and negative electroosmotic membranes are disposed alternatively and wherein at least one of the cathodes is disposed on one side of one of the membranes and at least one of the anodes is disposed on other side of the membrane. At least one of the cathodes or anodes is disposed between a positive electroosmotic membrane and negative electroosmotic membrane.

Abstract: A method of actuating a valve, comprises operatively coupling the valve with an electroosmotic pump; flowing a fluid through the electroosmotic pump; and generating a fluidic pressure of at least 0.75 PSI to actuate the valve, wherein the electroosmotic pump comprises one or more thin, porous, positive electroosmotic membranes and one or more thin porous, negative electroosmotic membranes; a plurality of electrodes comprising cathodes and anodes, and a power source; wherein each of the positive and negative electroosmotic membranes are disposed alternatively and wherein at least one of the cathodes is disposed on one side of one of the membranes and at least one of the anodes is disposed on the other side of the membrane and wherein at least one of the cathodes or anodes is disposed between a positive and a negative electroosmotic membrane.

Abstract: A microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is phsyically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.

Abstract: A current control device is disclosed. The current control device includes control circuitry integrally arranged with a current path and at least one micro electromechanical system (MEMS) switch disposed in the current path. The current control device further includes a hybrid arcless limiting technology (HALT) circuit connected in parallel with the at least one MEMS switch facilitating arcless opening of the at least one MEMS switch, and a pulse assisted turn on (PATO) circuit connected in parallel with the at least one MEMS switch facilitating arcless closing of the at least one MEMS switch.

Abstract: Provided is a device, such as a switch structure, that includes a contact and a conductive element that is configured to be deformable between a first position in which the conductive element is separated from the contact and a second position in which the conductive element contacts the contact. The conductive element can be formed substantially of metallic material configured to inhibit time-dependent deformation. For example, the metallic material may be configured to exhibit a maximum steady-state plastic strain rate of less than 10?12 s?1 when subject to a stress of at least about 25 percent of a yield strength of the metallic material and a temperature less than or equal to about half of a melting temperature of the metallic material. The contact and the conductive element may be part of a microelectromechanical device or a nanoelectromechanical device. Associated methods are also provided.

Abstract: A micro-electromechanical system (MEMS) device that in one embodiment includes at least two MEMS switches coupled to each other in a back-to-back configuration. The first and second suspended elements corresponding to first and second MEMS switches are electrically coupled. Further, first and second contacts corresponding to the first and second MEMS switches are configured such that a differential voltage between the second suspended element and the second contact is approximately equal to a differential voltage between the first suspended element and the first contact. The MEMS device includes at least one actuator coupled to one or more of the first and second suspended elements to actuate one or more of the first and the second suspended elements. In one example, the MEMS device includes one or more passive elements coupled to one or more of the first and second MEMS switches.

Abstract: A switching array includes a plurality of switching elements electrically coupled to each other, each switching element being configured to be switched between conducting and non-conducting states. The switching array also includes at least one parasitic minimizing circuitry electrically coupled to the plurality of switching elements and configured to provide near zero electrical voltage and current across and through each of the plurality of switching elements during switching of the plurality of switching elements between the conducting and non-conducting states.

Abstract: Electrostatic devices, systems and methods are presented. One embodiment is an electrostatic device including a substrate, a first electrode disposed on the substrate, a movable element having a second electrode and a control electrode. The control electrode is disposed in electrostatic communication with the movable element. The control electrode includes a protection layer having resistivity in a range of from about 1 ohm-cm to about 10 kohm-cm.

Abstract: A device for controlling the flow of electric current is provided. The device comprises a first conductor as thin film form; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K.

Abstract: A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position, in which the conductive element is separated from the contact by a separation distance, and a second position, in which the conductive element contacts the contact and stores mechanical energy. The conductive element can be further configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of the metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces varies by less than 20 percent over the cumulative time. Associated methods are also provided.

Abstract: A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 ?m, and in others by less than or equal to about 1 ?m), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V ?m?1 and/or a potential difference of about 330 V or more.

Abstract: An electrical through-connection, or via, that passes through a substrate to a bus on a first surface of the substrate. The via may be configured with an interlock such that the electrically conductive core of the via is constrained to thermally expand towards the second surface, away from the bus, thus preventing damage to the bus. The interlock may be a local constriction or enlargement of the via near the first surface of the substrate. The via may be greater in length along the bus than a unit spacing of beams in a parallel microswitch array actuated in unison along the bus. The via may be narrower in width than in length, and may form a trapezoidal geometry that is larger at the second surface of the substrate than at the first surface.

Abstract: Provided is a device, such as a switch structure, that includes a contact and a conductive element that is configured to be deformable between a first position in which the conductive element is separated from the contact and a second position in which the conductive element contacts the contact. The conductive element can be formed substantially of metallic material configured to inhibit time-dependent deformation. For example, the metallic material may be configured to exhibit a maximum steady-state plastic strain rate of less than 10?12 s?1 when subject to a stress of at least about 25 percent of a yield strength of the metallic material and a temperature less than or equal to about half of a melting temperature of the metallic material. The contact and the conductive element may be part of a microelectromechanical device or a nanoelectromechanical device. Associated methods are also provided.

Abstract: A device for controlling the flow of electric current is provided. The device comprises a first conductor as thin film form; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K.

Abstract: A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 ?m, and in others by less than or equal to about 1 ?m), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V ?m?1 and/or a potential difference of about 330 V or more.

Abstract: The present invention provides a remote operable over-current protection apparatus. The apparatus includes control circuitry integrally arranged on a current path and a micro electromechanical system (MEMS) switch disposed on the current path, the MEMS switch responsive to the control circuitry to facilitate the interruption of an electrical current passing through the current path. The apparatus further includes a communication connection in signal connection with the control circuitry such that the control circuitry is responsive to a control signal on the communication connection to control a state of the MEMS switch.

Abstract: Electrostatic devices, systems and methods are presented. One embodiment is an electrostatic device including a substrate, a first electrode disposed on the substrate, a movable element having a second electrode and a control electrode. The control electrode is disposed in electrostatic communication with the movable element. The control electrode includes a protection layer having resistivity in a range of from about 1 ohm-cm to about 10 kohm-cm.

Abstract: A micro electro-mechanical system switch is presented. The switch includes a base substrate having a support surface. An actuating surface having a notch and an electrical contact surface having an extension is provided. The extension is disposed within the notch. A beam is attached to the base substrate. The beam includes an actuatable free end that is configured to flex upon actuation and to make contact with at least a portion of the extension and carry current therethrough.