Abstract: Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E?.

Abstract: Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E?.

Abstract: A charged particle beam performance measurement system includes a charged particle beam generator device for producing a charged particle beam, a test reticle having at least two areas of higher transparency than its surroundings that form a pattern, a reduction projection imaging device, a reference target having an essentially identical pattern as the test reticle, and a beam current detector. A patterned beam is generated by passing the charged particle beam through the pattern areas of the test reticle. The patterned beam is reduced and projected by the reduction projection imaging device and the reduced patterned beam is imaged onto a reference target. The reduced patterned beam is then exposed to the reference target, wherein some of the beam may pass through reference target pattern areas.

Abstract: A lithographic projection method which comprises projecting radiation along a transmission path and through a lens system and an opaque back focal plane filter for electrons with a transparent aperture for the projected radiation to produce a patterned image and an amount of desired radiation on a target. The transmission path includes a source of radiation of charged particles directed at a target comprising a substrate coated with resist. A pattern-defining mask that contains a plurality of subresolution scattering features thereon to produce the desired degree of scattering of the radiation is placed between the source and the target. The subresolution scattering features vary in density as an direct function of predicted proximity exposure.

Abstract: A method and system for calibrating a projection electron beam. The electron beam is directed through a first mask pattern and onto a first calibration plate. The electron beam is directed through a second mask pattern and onto a second calibration plate. The first mask pattern and the first calibration plate are used to adjust the orientation of the electron beam, and the second mask pattern and the second calibration plate are used to adjust the magnification of the electron beam.

Abstract: A method and system for studying the effect of electron-electron interaction in an electron beam writing system. First and second test reticles are provided that have different open areas. An electron beam is directed through the first test reticle to form a first pattern on a test surface, and the electron beam is then directed through the second test reticle to form a second pattern on a test surface. Because the open areas of the test reticles differ, the current of the electron beam is different when that beam passes through the first test reticle than when that beam passes through the second test reticle. The resolution of the first formed pattern is compared with the resolution of the second formed pattern to assess the effect of the different currents of the electron beam on the resolutions of the formed patterns.

Abstract: A electron beam performance measurement system includes an electron beam generator device for producing an electron beam, a test reticle having a series of openings forming a pattern, a reduction projection imaging device, a reference target having an essentially identical pattern as the test reticle, and a beam current detector. A patterned beam is generated by passing the electron beam through the pattern openings of the test reticle. The patterned beam is reduced and projected by the reduction projection imaging device and the reduced patterned beam is imaged onto a reference target. The reduced patterned beam is then exposed to the reference target, wherein some of the beam may pass through reference target pattern openings. Beam current detector records and measures the amount of beam current that is absorbed on, back-scattered from, or transmitted by the target reference, and determines from the measured beam current the accuracy of the projection system.