Abstract: A semiconductor device assembly is provided. The assembly includes a substrate having a first layer with a first contact and a second layer with a second contact. A via that includes a first conductive material electrically couples the first contact and the second contact. A second conductive material having a lower melting point than the first conductive material is disposed at least partially between the via and the second contact. When a crack occurs between the via and the second contact, the second conductive material may be heated to fill the crack. Thus, the techniques, apparatuses, and systems disclosed herein may provide a repairable substrate.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a substrate having a bore that extends through the substrate. The semiconductor device assembly may include a semiconductor die disposed on the substrate. The semiconductor device assembly may include a thermally-conductive channel extending through the bore, the thermally-conductive channel having a first end located at a same side of the substrate as the semiconductor die, and a second end located at an opposite side of the substrate from the semiconductor die.

Abstract: Apparatuses, systems, and methods for a damper for a printed circuit board assembly (PCBA). One example apparatus can include a PCBA of a solid state drive (SSD) and a damper configured to contact the PCBA, contact an enclosure of the SSD, and damp shock impulses applied to the SSD.

Abstract: Stacked semiconductor die assemblies with heat sinks and associated methods and systems are disclosed. In some embodiments, a controller carrying one or more memory dies may be attached to a front side of a substrate. The substrate may include a heat sink formed on its back side such that the heat sink can establish a thermal contact with the controller. Further, the heat sink may be coupled to a thermally conductive pad of a printed circuit board (PCB) that carries the substrate. In this manner, the controller may be provided with a heat path toward the PCB to dissipate thermal energy generated during operation. In some cases, the substrate may include a set of thermal vias extending from the heat sink toward the controller to enhance the thermal contact between the controller and the heat sink.

Abstract: A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

Abstract: A microelectronic device and/or microelectronic device package having a warpage control structure. The warpage control structure may be positioned over an encapsulating material, wherein the encapsulating material is positioned between the warpage control structure and a die positioned over a substrate. The warpage control structure may have a first thickness over a first portion of the encapsulating material and a second thickness over a second portion of the encapsulating material. Methods of forming the microelectronic device are also disclosed herein.

Abstract: Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.

Abstract: Stacked semiconductor die assemblies with heat sinks and associated methods and systems are disclosed. In some embodiments, a controller carrying one or more memory dies may be attached to a front side of a substrate. The substrate may include a heat sink formed on its back side such that the heat sink can establish a thermal contact with the controller. Further, the heat sink may be coupled to a thermally conductive pad of a printed circuit board (PCB) that carries the substrate. In this manner, the controller may be provided with a heat path toward the PCB to dissipate thermal energy generated during operation. In some cases, the substrate may include a set of thermal vias extending from the heat sink toward the controller to enhance the thermal contact between the controller and the heat sink.

Abstract: Semiconductor systems having anti-warpage frames (and associated systems, devices, and methods) are described herein. In one embodiment, a semiconductor system includes (a) a printed circuit board (PCB) having a first side and a second side opposite the first side, and (b) at least one memory device attached to the PCB at the first side of the PCB. The semiconductor system further includes a frame structure attached to the PCB at the first side of the PCB and proximate the at least one memory device. The frame structure can be configured to resist warpage of the PCB, for example, when the semiconductor system is heated to attach the at least one memory device to the PCB.

Abstract: Systems and methods for measuring and predicting the strength of semiconductor devices and packaging are disclosed. In some embodiments, a semiconductor device assembly comprises a package substrate, a semiconductor die electrically coupled to the package substrate, and a molding covering at least a portion of the semiconductor die, where the molding includes a through-mold via (TMV) extending from an upper surface into the mold material to a depth. The semiconductor device assembly can include a strain gauge disposed in the molding at the depth of the TMV and be electrically coupled to the TMV. For example, the TMV can extend to the surface of the semiconductor die, to the package substrate, or other critical areas of the semiconductor device assembly, enabling strain to be measured at these depths. The semiconductor device assembly can be used in testing to predict the strength of the die and packaging in real-world scenarios, such as being dropped, bent, or crushed.

Abstract: Semiconductor die assemblies with flexible interconnects, and associated methods and systems are disclosed. The semiconductor die assembly includes a package substrate and a semiconductor die attached to the package substrate through the flexible interconnects. The flexible interconnects include one or more rigid sections and one or more flexible sections, each of which is disposed next to the rigid sections. The flexible sections may include malleable materials with relatively low melting temperatures (e.g., having relatively low modulus at elevated temperatures) such that the flexible interconnects can have reduced flexural stiffness during the assembly process. The malleable materials of the flexible interconnects, through plastic deformation in response to stress generated during the assembly process, may facilitate portions of the flexible interconnects to shift so as to reduce transfer of the stress to other parts of the semiconductor die assembly—e.g., circuitry of the semiconductor die.

Abstract: Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.

Abstract: Various embodiments described herein provide for printed circuit boards with one or more spaces for embedding components, which can be used to implement a memory sub-system.

Abstract: Semiconductor devices having reinforcement structures configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a substrate coupled to the semiconductor die. The substrate can include a base structure and a reinforcement structure at least partially within a die shadow region of the substrate. The reinforcement structure can be at least partially surrounded by the base structure. The reinforcement structure has a higher stiffness than the base structure.

Abstract: Solder joints comprising two different solder materials having different melting points, an outer solder material extending over an inner solder material bonded to a conductive pad, the inner solder material having a lower melting point than a melting point of the outer solder material and being in a solid state at substantially ambient temperature. A metal material having a higher melting point than a melting point of either solder material may coat at least a portion of the inner solder material. Microelectronic components, assemblies and electronic systems incorporating the solder joints, as well as processes for forming and repairing the solder joints are also disclosed.

Abstract: A semiconductor package assembly includes a first mounting surface of a package substrate that faces a second mounting surface of a printed circuit board. A first structural element bond pad is mounted to the first mounting surface. A second structural element bond pad is mounted to the second mounting surface, and the first and second structural element bond pads are aligned with each other. A structural element is interconnected with a first solder joint to the first structural element bond pad and interconnected with a second solder joint to the second structural element bond pad. The structural element extends between the first and second structural element bond pads to absorb mechanical shock when a compressive force pushes one of the first and second mounting surfaces toward the other.

Abstract: Semiconductor devices having reinforcement structures configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a substrate coupled to the semiconductor die. The substrate can include a base structure and a reinforcement structure at least partially within a die shadow region of the substrate. The reinforcement structure can be at least partially surrounded by the base structure. The reinforcement structure has a higher stiffness than the base structure.

Abstract: Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.

Abstract: A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

Abstract: Various embodiments described herein provide for printed circuit boards with one or more spaces for embedding components, which can be used to implement a memory sub-system.