Patents by Inventor Christopher Ian Harris

Christopher Ian Harris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6104043
    Abstract: A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.
    Type: Grant
    Filed: February 20, 1997
    Date of Patent: August 15, 2000
    Assignee: ABB Research Ltd.
    Inventors: Willy Hermansson, Bo Bijlenga, Lennart Ramberg, Kurt Rottner, Lennart Zdansky, Christopher Ian Harris, Mietek Bakowski, Adolf Schoner, Nils Lundberg, Mikael Ostling, Fanny Dahlquist