Patents by Inventor Christopher J. Rando

Christopher J. Rando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon nitride hardstop encapsulation layer for STI region
    Patent number: 8030173
    Abstract: A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer (96) to cover a shallow trench isolation region (95), depositing a protective dielectric layer (97, 98) over the silicon nitride layer (96), and polishing and densifying the protective dielectric layer (97, 98) to thereby form a densified silicon nitride encapsulation layer (99) over the shallow trench isolation region (95).
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: October 4, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Michael D. Turner, Christopher J. Rando
  • Silicon Nitride Hardstop Encapsulation Layer for STI Region
    Publication number: 20100304548
    Abstract: A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer (96) to cover a shallow trench isolation region (95), depositing a protective dielectric layer (97, 98) over the silicon nitride layer (96), and polishing and densifying the protective dielectric layer (97, 98) to thereby form a densified silicon nitride encapsulation layer (99) over the shallow trench isolation region (95).
    Type: Application
    Filed: May 29, 2009
    Publication date: December 2, 2010
    Inventors: Michael D. Turner, Christopher J. Rando