Abstract: Polymer nanostructures and compositions, devices, and systems comprising polymer nanostructures. In various examples, a composition, a device, or a system comprises a plurality of polymer nanostructures. The polymer nanostructures are disposed on a surface of a substrate. In various examples, the polymer nanostructures are disposed in pre-determined pattern on a surface of a substrate. In various examples, the polymer nanostructures are self-supporting. In various examples, a polymer nanostructure comprises a polypeptide group or the like. In various examples, a polymer nanostructure comprises an end group, such as, for example, a fluorescent end group, or the like. In various examples, a system is a sensor, which can be used to analyze a sample. In various examples, a composition, a device, or a system is used to analyze samples, such as, for example, samples comprising one or more volatile organic compound(s).

Abstract: A pattern-forming method includes: applying directly or indirectly on a substrate a radiation-sensitive composition containing a complex and an organic solvent to form a film; exposing the film to an ultraviolet ray, a far ultraviolet ray, an extreme ultraviolet ray, or an electron beam; and developing the film exposed, wherein the complex is represented by formula (1). [MmLnQp]??(1) In the formula (1), M represents a zinc atom, a cobalt atom, a nickel atom, a hafnium atom, a zirconium atom, a titanium atom, an iron atom, a chromium atom, a manganese atom, or an indium atom; and L represents a ligand derived from a compound represented by formula (2). R1—CHR3—R2 ??(2) In the formula (2), R1 and R2 each independently represent —C(?O)—RA, —C(?O)—ORB, or —CN.

Abstract: A radiation-sensitive composition including: a compound having a metal atom and a ligand; and a solvent. The ligand is derived from a first compound represented by the following formula (1), a second compound represented by the following formula (2), or a combination thereof. In the following formula (1), X1 represents a substituted or unsubstituted ethenyl group or a substituted or unsubstituted ethynyl group; Y1 represents —NRARB or —COOH. In the following formula (2), X2 represents a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, a monovalent oxyorganic group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, a cyano group, or a halogen atom; and Y2 represents —NRARB or —COOH.

Abstract: A radiation-sensitive composition includes: a plurality of particles including a metal oxide as a principal component; and an organic solvent. A ratio (D90/D50) of a 90% cumulative diameter (D90) to a 50% cumulative diameter (D50) of the particles is no less than 1.0 and no greater than 1.3 as determined by a volumetric particle size distribution measurement according to dynamic light scattering with a 1% by mass dispersion at 25° C. prepared by dispersing the plurality of particles in propylene glycol monomethyl ether acetate.

Abstract: A radiation-sensitive composition includes a metal-containing component and an organic solvent. The metal-containing component includes particles including a metal oxide as a principal component. The metal-containing component includes at least two metal atoms which are different from one another, and a percentage content of the at least two metal atoms with respect to an entirety of metal atoms and metalloid atoms in the composition is no less than 50 atom %. The metal-containing component preferably includes: a first metal atom that is at least one selected from a titanium atom, a zirconium atom, a hafnium atom, a zinc atom, a tin atom and an indium atom; and a second metal atom that is at least one selected from a lanthanum atom and an yttrium atom.

Abstract: The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

Abstract: A radiation-sensitive composition includes particles including a metal oxide as a principal component, and an organic solvent. A metal atom constituting the metal oxide includes a first metal atom that is a zinc atom, a boron atom, an aluminum atom, a gallium atom, a thallium atom, a germanium atom, an antimony atom, a bismuth atom, a tellurium atom, or a combination thereof. A percentage content of the first metal atom with respect to total metal atoms in the radiation-sensitive composition is no less than 50 atomic %. A pattern-forming method includes applying the radiation-sensitive composition to form a film on a substrate, exposing the film, and developing the film exposed.

Abstract: A radiation-sensitive composition includes particles including a metal oxide as a principal component, and an organic solvent. A metal atom constituting the metal oxide includes a first metal atom that is a zinc atom, a boron atom, an aluminum atom, a gallium atom, a thallium atom, a germanium atom, an antimony atom, a bismuth atom, a tellurium atom, or a combination thereof. A percentage content of the first metal atom with respect to total metal atoms in the radiation-sensitive composition is no less than 50 atomic %. A pattern-forming method includes applying the radiation-sensitive composition to form a film on a substrate, exposing the film, and developing the film exposed.

Abstract: Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

Abstract: A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: The invention provides new nanoparticles that include a Group 4 metal oxide core and a coating surrounding the core, where the coating contains a ligand according to Formula (I), or a carboxylate thereof. The invention also provides new photoresist compositions that include a photoacid generator and a ligand acid or carboxylate thereof, where pKaPAG is lower than pKaLA. Methods for patterning a substrate using the inventive photoresist composition are also provided.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.