Abstract: Electrical device including a substrate having a surface and a radiofrequency field effect transistor (RF-FET) on the substrate surface. RF-FET includes a CNT layer on the substrate surface, the CNT layer including electrically conductive aligned carbon nanotubes, and pin-down anchor layers on the CNT layer. A first portion of the CNT layer, located in-between the pin-down anchor layers, is not covered by the pin-down anchor layers and is a channel region of the radiofrequency field effect transistor and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the aligned CNTs in the first portion of the CNT layer: the aligned CNTs have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-section, and at least 40 percent of the aligned CNTs are discrete from any CNTs of the CNT layer.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, the carbon nanotube solution including carbon nanotubes dispersed in chloroform, and a reservoir configured to contain a water subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: Manufacturing an electrical device including providing a substrate having a surface and forming a radiofrequency field effect transistor on the surface, including forming a CNT layer on the surface and depositing a pin-down layer on the CNT layer. The pin-down layer is patterned to form separate pin-down anchor layers. A first portion of the CNT layer, located in-between the pin-down anchor layers and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the electrically conductive aligned carbon nanotubes in the first portion of the CNT layer the electrically conductive aligned carbon nanotubes have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-sections, and at least 40 percent of the electrically conductive aligned carbon nanotubes are discrete from any carbon nanotubes of the CNT layer.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, the carbon nanotube solution including carbon nanotubes dispersed in chloroform, and a reservoir configured to contain a water subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, and a reservoir configured to contain a subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: Electrical device comprising a field effect transistor (FET). The FET includes a substrate with a channel region thereon, the channel region including a film of single-walled carbon nanotubes located on the substrate, metallic source and drain electrodes layers on the channel region and gate structure covering a portion of channel region and located between the metallic source and drain electrode layers. The gate structure includes a gate dielectric layer on the portion of the channel region and a gate electrode layer on the gate dielectric layer. Other non-gate-covered portions of the channel region are located between the source electrode layer and the gate structure and between the drain electrode layer and the gate structure. The FET includes a stoichiometrically oxygen-reduced silicon oxide layer contacting the non-gate-covered portions of the channel region, wherein the stoichiometrically oxygen-reduced silicon oxide composition includes SiOx where x has a value of less than 2.

Abstract: Manufacturing an electrical device including providing a substrate having a surface and providing a sacrificial layer on the surface of the substrate. Depositing a solution of carbon nanotubes suspended in a solvent on a surface of the sacrificial layer and removing the solvent of the solution to thereby leave the carbon nanotubes on the sacrificial layer. Removing the sacrificial layer whereby the carbon nanotubes form a carbon nanotube layer and the carbon nanotubes in the carbon nanotube layer are aligned with each other. An electrical device, including a substrate having a surface and a layer of carbon nanotubes on the surface of the substrate. The carbon nanotubes in the layer are aligned with each other, such that an alignment angle between adjacent ones of the carbon nanotubes is within about ±20 degrees.

Abstract: Electrical device comprising a field effect transistor (FET). The FET includes a substrate with a channel region thereon, the channel region including a film of single-walled carbon nanotubes located on the substrate, metallic source and drain electrodes layers on the channel region and gate structure covering a portion of channel region and located between the metallic source and drain electrode lavers. The gate structure includes a gate dielectric layer on the portion of the channel region and a gate electrode layer on the gate dielectric layer. Other non-gate-covered portions of the channel region are located between the source electrode layer and the gate structure and between the drain electrode layer and the gate structure. The FET includes a stoichiometrically oxygen-reduced silicon oxide layer contacting the non-gate-covered portions of the channel region, wherein the stoichiometrically oxygen-reduced silicon oxide composition includes SiOx where x has a value of less than 2.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, and a reservoir configured to contain a subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: A method includes depositing a first photoresist layer having a first thickness above a substrate, defining a first opening in the first photoresist layer by exposing the first photoresist layer to radiation, the first opening having a first width. The method includes depositing a conformal passivation layer directly on the first photoresist layer, and depositing a second photoresist layer having a second thickness on the conformal passivation layer. The method includes defining a second opening in the second photoresist layer by exposing the second photoresist layer to radiation, the second opening having a second width greater than the first width, and depositing a metal layer above the first photoresist layer and the substrate to form an electrode, a dielectric layer being provided to contact the metal layer. The method includes removing the first photoresist layer and the second photoresist layer. The first photoresist layer can include a positive photoresist.

Abstract: A method includes depositing a first photoresist layer having a first thickness above a substrate, defining a first opening in the first photoresist layer by exposing the first photoresist layer to radiation, the first opening having a first width. The method includes depositing a conformal passivation layer directly on the first photoresist layer, and depositing a second photoresist layer having a second thickness on the conformal passivation layer. The method includes defining a second opening in the second photoresist layer by exposing the second photoresist layer to radiation, the second opening having a second width greater than the first width, and depositing a metal layer above the first photoresist layer and the substrate to form an electrode, a dielectric layer being provided to contact the metal layer. The method includes removing the first photoresist layer and the second photoresist layer. The first photoresist layer can include a positive photoresist.