Patents by Inventor Christopher Nam LEE

Christopher Nam LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9703200
    Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: July 11, 2017
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Jong Keun Park, Christopher Nam Lee, Cecily Andes, Choong-Bong Lee
  • Patent number: 9482945
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: November 1, 2016
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Jong Keun Park, Christopher Nam Lee, Cecily Andes, Deyan Wang
  • Patent number: 9418848
    Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: August 16, 2016
    Assignees: Micron Technology, Inc., Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
  • Publication number: 20160103393
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Application
    Filed: October 13, 2015
    Publication date: April 14, 2016
    Inventors: Jong Keun PARK, Christopher Nam LEE, Cecily ANDES, Deyan WANG
  • Publication number: 20160027638
    Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
    Type: Application
    Filed: October 1, 2015
    Publication date: January 28, 2016
    Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
  • Patent number: 9184058
    Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: November 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
  • Patent number: 9158198
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: October 13, 2015
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Jong Keun Park, Christopher Nam Lee, Cecily Andes, Deyan Wang
  • Publication number: 20150185607
    Abstract: Photoresist overcoat compositions comprise: a quenching polymer wherein the quenching polymer comprises: a first unit having a basic moiety; and a second unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R2 is chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR3, wherein R3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR4— wherein R4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and an organic solvent; wherein the quenching polymer is present in the composition in an amount of from 80 to 100 wt % based on total solids of the overcoat composition The compositions have particul
    Type: Application
    Filed: December 31, 2014
    Publication date: July 2, 2015
    Inventors: Jong Keun PARK, Christopher Nam LEE, Cecily ANDES, Choong-Bong LEE
  • Publication number: 20150185615
    Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.
    Type: Application
    Filed: December 31, 2014
    Publication date: July 2, 2015
    Inventors: Jong Keun PARK, Christopher Nam LEE, Cecily ANDES, Choong-Bong LEE
  • Publication number: 20150179467
    Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
    Type: Application
    Filed: December 23, 2013
    Publication date: June 25, 2015
    Applicants: Micron Technology, Inc., Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
  • Publication number: 20140038102
    Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
    Type: Application
    Filed: July 31, 2013
    Publication date: February 6, 2014
    Inventors: Jong Keun PARK, Christopher Nam LEE, Cecily ANDES, Deyan WANG