Patents by Inventor Christopher R. Fairley
Christopher R. Fairley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7858911Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: July 11, 2008Date of Patent: December 28, 2010Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjanim Tsai, Scott A. Young
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Patent number: 7554655Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: May 22, 2008Date of Patent: June 30, 2009Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7522275Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.Type: GrantFiled: August 14, 2007Date of Patent: April 21, 2009Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Publication number: 20080273196Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: ApplicationFiled: July 11, 2008Publication date: November 6, 2008Applicant: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjanim Tsai, Scott A. Young
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Publication number: 20080225298Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: ApplicationFiled: May 22, 2008Publication date: September 18, 2008Applicant: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7399950Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: September 15, 2006Date of Patent: July 15, 2008Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjamin Tsai, Scott A. Young
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Patent number: 7379173Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control.Type: GrantFiled: July 9, 2004Date of Patent: May 27, 2008Assignee: KLA-Tencor CorporationInventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7259844Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: January 12, 2007Date of Patent: August 21, 2007Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7164475Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.Type: GrantFiled: November 4, 2004Date of Patent: January 16, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7109458Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: March 14, 2005Date of Patent: September 19, 2006Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjamin Tsai, Scott A. Young
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Patent number: 6867406Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: March 23, 2000Date of Patent: March 15, 2005Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjamin Tsai, Scott A. Young
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Publication number: 20040252297Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: ApplicationFiled: July 9, 2004Publication date: December 16, 2004Applicant: KLA-Tencor Technologies CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 6816249Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: July 17, 2001Date of Patent: November 9, 2004Assignee: KLA-Tencor CorporationInventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Publication number: 20020118359Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: ApplicationFiled: July 17, 2001Publication date: August 29, 2002Applicant: KLA-Tencor Technologies CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 6288780Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: December 16, 1997Date of Patent: September 11, 2001Assignee: KLA-Tencor Technologies Corp.Inventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 5963314Abstract: A laser imaging system is used to analyze defects on semiconductor wafers that have been detected by patterned wafer defect detecting systems (wafer scanners). The laser imaging system replaces optical microscope review stations now utilized in the semiconductor fab environment to examine detected optical anomalies that may represent wafer defects. In addition to analyzing defects, the laser imaging system can perform a variety of microscopic inspection functions including defect detection and metrology. The laser imaging system uses confocal laser scanning microscopy techniques, and operates under class 1 cleanroom conditions and without exposure of the wafers to operator contamination or airflow.Type: GrantFiled: October 15, 1996Date of Patent: October 5, 1999Assignee: Ultrapointe CorporationInventors: Bruce W. Worster, Dale E. Crane, Hans J. Hansen, Christopher R. Fairley, Ken K. Lee
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Patent number: 5783814Abstract: A microscope system moves a target in a first direction relative to a low power objective lens and, during the relative motion, generates and records values of an electronic focus signal that depends on the magnitude of light reflected by the target. Then, a host workstation calculates a first estimate of position ("focus position") of the target at which the microscope system is focused, by a median point method. In the median point method, the host workstation calculates the sum of the recorded values and determines the position along the range of motion at which half of this sum was exceeded, to be a first estimate of the focus position. From the intensity values of the first pass, optimal sensor gain is set for subsequent passes. Second and third estimates of the focus position can be calculated in a similar manner if necessary and the target is moved to the most recent estimate of the focus position.Type: GrantFiled: December 26, 1996Date of Patent: July 21, 1998Assignee: Ultrapointe CorporationInventors: Christopher R. Fairley, Timothy V. Thompson, Ken K. Lee
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Patent number: 5672861Abstract: A microscope system moves a target in a first direction relative to a low power objective lens and, during the relative motion, generates and records values of an electronic focus signal that depends on the magnitude of light reflected by the target. Then, a host workstation calculates a first estimate of position ("focus position") of the target at which the microscope system is focused, by a median point method. In the median point method, the host workstation calculates the sum of the recorded values and determines the position along the range of motion at which half of this sum was exceeded, to be a first estimate of the focus position. From the intensity values of the first pass, optimal sensor gain is set for subsequent passes. Second and third estimates of the focus position can be calculated in a similar manner if necessary and the target is moved to the most recent estimate of the focus position.Type: GrantFiled: January 17, 1995Date of Patent: September 30, 1997Assignee: Ultrapointe CorporationInventors: Christopher R. Fairley, Timothy V. Thompson, Ken K. Lee
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Patent number: 5557113Abstract: A method and apparatus for generating a surface image of a target. The laser beam of a confocal laser microscope is moved along a scanning pattern on an area of a target. During each scanning pattern, the resulting electronic focus signal of the microscope is sampled at defined positions along the scanning pattern to generate a frame of pixel intensity values. At the end of each scanning pattern, the height of the target is slightly increased. A new frame of pixel intensity values is generated for each height of the target. The pixel intensity values of the frames are compared. The maximum pixel intensity value for each defined position along the scanning pattern is stored to create a single frame representative of the surface image of the target. In an alternate embodiment, the height at which each maximum pixel intensity value was measured is stored in a separate memory.Type: GrantFiled: February 18, 1994Date of Patent: September 17, 1996Assignee: Ultrapointe Corp.Inventors: Abigail A. Moorhouse, Christopher R. Fairley, Phillip R. Rigg, Alan Helgesson
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Patent number: 5479252Abstract: A laser imaging system is used to analyze defects on semiconductor wafers that have been detected by patterned wafer defect detecting systems (wafer scanners). The laser imaging system replaces optical microscope review stations now utilized in the semiconductor fab environment to examine detected optical anomalies that may represent wafer defects. In addition to analyzing defects, the laser imaging system can perform a variety of microscopic inspection functions including defect detection and metrology. The laser imaging system uses confocal laser scanning microscopy techniques, and operates under class 1 cleanroom conditions and without exposure of the wafers to operator contamination or airflow.Type: GrantFiled: June 17, 1993Date of Patent: December 26, 1995Assignee: Ultrapointe CorporationInventors: Bruce W. Worster, Dale E. Crane, Hans J. Hansen, Christopher R. Fairley, Ken K. Lee