Abstract: A system comprises an equipment front end module (EFEM), a vacuum transfer module (VTM), a plurality off quad station process modules (QSMs). The EFEM is configured to receive a plurality of wafers. The EFEM comprises an EFEM transfer robot. The vacuum transfer module (VTM) is configured to receive the plurality of wafers from the EFEM. The VTM comprises a VTM transfer robot. The plurality of quad station process modules (QSMs) is coupled to the VTM. The VTM transfer robot is configured to transfer wafers between the VTM and the plurality of QSMs. The EFEM transfer robot is configured to transfer wafers between the EFEM and the VTM.

Abstract: In some examples, a dual-mode autonomous guided vehicle (AGV) is provided for docking a module in a fabrication bay. An example AGV may comprise a chassis for supporting the module on the AGV; drive means to transport the AGV under autonomous guidance, in a module transportation mode, to a specified location within the fabrication bay; a Cartesian x-y movement table to move the module under autonomous guidance, in a module docking mode, in an x- or y-docking direction, into a specific docking position; and a z-direction lift mechanism to move the module in a z-docking direction during the module docking mode.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A sealing assembly is provided for sealing retractable opposing planar surfaces of processing modules each having sealable cavities for the fabrication of semiconductor wafers. The sealing assembly may include an inner frame adapted to be concentrically positioned within a central opening of an outer frame. The outer frame may include lifting tabs attached to an upper portion such that the lifting tabs are graspable to removably position the sealing assembly between the opposing planar surfaces of the processing modules. An O-ring, which may include an elastomeric material, is adapted to fit about a circumference of the inner frame. The opposing surfaces of the processing modules define an opening therebetween which accepts the sealing assembly. The opposing surfaces of the modules are retractably movable towards one another thereby coupling the O-ring between the opposing planar surfaces to provide a seal.

Abstract: A device for aligning a flatted object to a desired orientation. The flatted object has a substantially circular perimeter and a flatted chord portion and may be a silicon wafer or a cover for an electrostatic chuck. The device includes multiple conically shaped rollers that center and rotationally align the object, each roller having a bottom lip for supporting the object. Centering rollers are mounted so that they contact the circular perimeter of the object when it is in the desired orientation. Rotational alignment rollers are mounted so that they contact the flatted chord portion of the object when it is in the desired orientation. When placed on the alignment device, the flatted object passively moves to the desired orientation under the force of gravity.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A device for aligning a flatted object to a desired orientation. The flatted object has a substantially circular perimeter and a flatted chord portion and may be a silicon wafer or a cover for an electrostatic chuck. The device includes multiple conically shaped rollers that center and rotationally align the object, each roller having a bottom lip for supporting the object. Centering rollers are mounted so that they contact the circular perimeter of the object when it is in the desired orientation. Rotational alignment rollers are mounted so that they contact the flatted chord portion of the object when it is in the desired orientation. When placed on the alignment device, the flatted object passively moves to the desired orientation under the force of gravity.

Abstract: A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region.

Abstract: A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemicalvapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

Abstract: A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

Abstract: An apparatus and a method for delivering a liquid are disclosed. The liquid contained in a vessel is subjected to a pressurized gas. Any pressurized gas dissolved in the liquid is removed in a degas module by passing the liquid through a gas permeable tube subjected to a pressure differential. Then the liquid is dispensed by a liquid mass flow controller.

Abstract: A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

Abstract: An apparatus and a method for delivering a liquid are disclosed. The liquid contained in a vessel is subjected to a pressurized gas. Any pressurized gas dissolved in the liquid is removed in a degas module by passing the liquid through a gas permeable tube subjected to a pressure differential. Then the liquid is dispensed by a liquid mass flow controller.

Abstract: A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CCVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region.

Abstract: A process comprising a platen having a substrate contact supporting a substrate during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard is positioned adjacent to the substrate contact and has an extension extending over a frontside peripheral region of the substrate. Deposition control gas is introduced through an opening beneath the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a substrate frontside peripheral region. The restrictive opening provides a uniform deposition control gas flow at a pressure greater than reactor ambient pressure and process gas pressure impinging on the frontside of the substrate.

Abstract: An apparatus and a method for delivering a liquid are disclosed. The liquid contained in a vessel is subjected to a pressurized gas. Any pressurized gas dissolved in the liquid is removed in a degas module by passing the liquid through a gas permeable tube subjected to a pressure differential. Then the liquid is dispensed by a liquid mass flow controller.