Abstract: A wavelength division multiplexing module adapted to combine a plurality of light beams to a mixed light beam is provided. The wavelength division multiplexing module includes a housing, a plurality of light emitting elements, an optical division element, and a plurality of reflectors. The light emitting elements are adapted to provide light beams. The optical division element is disposed on a transmission path of the light beams. The reflectors are disposed on the transmission path of the light beams. The optical division element has a reflection region and a light transmission region on one side opposite to the light emitting elements. The reflection region is adapted to reflect a portion of the light beams, and the light transmission region is adapted to allow the mixed light beam to pass through. At least two of the light emitting elements are arranged in an extending direction of the housing.

Abstract: A wavelength division multiplexing module adapted to combine a plurality of light beams to a mixed light beam is provided. The wavelength division multiplexing module includes a housing, a plurality of light emitting elements, an optical division element, and a plurality of reflectors. The light emitting elements are adapted to provide light beams. The optical division element is disposed on a transmission path of the light beams. The reflectors are disposed on the transmission path of the light beams. The optical division element has a reflection region and a light transmission region on one side opposite to the light emitting elements. The reflection region is adapted to reflect a portion of the light beams, and the light transmission region is adapted to allow the mixed light beam to pass through. At least two of the light emitting elements are arranged in an extending direction of the housing.

Abstract: An optical dichroic element adapted to combine first and second light beams into a mixed light beam is provided. The optical dichroic element includes a transparent element, a first reflector and a second reflector. The transparent element is adapted to let the first light beam and the second light beam pass through. The first reflector is disposed on the transparent element. The second reflector is disposed on the transparent element. The first reflector is adapted to reflect the first light beam to the second reflector. The second reflector is adapted to reflect the first light beam and let the second light beam pass through. The first reflector and the second reflector are opposite and not parallel to each other on the transparent element, and an included angle is provided between the first reflector and the second reflector. Moreover, an optical dichroic module including the optical dichroic element is also provided.

Abstract: An optical module adapted to combine a first and a second light beam into a mixed light beam is provided. The optical module includes a base, an optoelectronic element and an optical dichroic element. The base has an accommodating space. The optoelectronic element is adapted in the accommodating space. The optical dichroic element is adapted on the base. The optical dichroic element includes a transparent element, a first reflector and a second reflector. The transparent element is adapted to let the first light beam and the second light beam pass through. The first and second reflector are disposed on the transparent element. The first reflector is adapted to reflect the first light beam to the second reflector. The second reflector is adapted to reflect the first light beam and let the second light beam pass through. The first and the second reflector are opposite and not parallel to each other on the transparent element, and there is an angle between the first and the second reflector.

Abstract: A beam-splitting integrated optical element including a shell, at least one first lens, and at least one second lens is provided. The shell includes a first lens surface, a second lens surface, at least one first reflective surface, and at least one second reflective surface. A bottom edge of each first reflective surface and a bottom edge of each second reflective surface are not connected to each other. The at least one first lens is disposed on the first lens surface. The at least one second lens is disposed on the second lens surface, and each second lens has a second optical axis. Each second reflective surface is located at at least one side of the corresponding second optical axis and located on a transmission path of only a portion of a first beam. An optical transmitter module incorporating said beam-splitting optical element is also provided.

Abstract: A hybrid integrated optical sub-assembly including a substrate, a shell, an optical processing unit, and a plurality of photoelectric conversion elements is provided. The shell is disposed on the substrate and includes a frame and a beam connected to the frame. The frame has at least one first lens element, and the beam has at least one second lens element. The optical processing unit is located between the at least one first lens element and the at least one second lens element. The photoelectric conversion elements are disposed on the substrate, and the at least one second lens element is located between the optical processing unit and the photoelectric conversion elements.

Abstract: A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.

Abstract: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying area and the light receiving device is disposed in the second carrying area. The metal sheet is disposed in the carrier substrate and located between the first carrying area and the second carrier area, for blocking optical signal transmission between the light emitting device and the light receiving device.

Abstract: A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.

Abstract: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying area and the light receiving device is disposed in the second carrying area. The metal sheet is disposed in the carrier substrate and located between the first carrying area and the second carrier area, for blocking optical signal transmission between the light emitting device and the light receiving device.

Abstract: A LCD panel is provided. The LCD panel includes a front substrate, a plurality of first phosphor composites, a plurality of second phosphor composites, a black matrix, a transparent electrode, a TFT array substrate and a liquid crystal layer. The liquid crystal layer is sandwiched between the front substrate and the TFT array substrate. The first phosphor composites, the second phosphor composites, the black matrix and the transparent electrode are disposed on the front substrate. The black matrix divides the front substrate into three windows including first windows, second windows and third windows periodically, wherein the first phosphor composites are disposed on the first windows, and the second phosphor composites are disposed on the second windows. The first phosphor composites and the second phosphor composites are capable of converting the primary light shinning towards the LCD panel into different colors respectively.

Abstract: Junction field effect transistors are described with unusually short gates and a self-aligned structure which permits close approach of the source and drain electrodes to the p-n junction. Such devices have high speed, high gain and are usefully combined with other field effect transistors in integrated circuits.

Abstract: A vertical, enhancement mode InP MISFET includes a conducting n-type substrate, a semi-insulating Fe-doped InP blocking layer on the substrate, a conducting layer formed in the blocking layer, a groove which extends through both the conducting layer and the blocking layer, a borosilicate dielectric layer formed on the walls of the groove, a gate electrode formed on the dielectric layer, drain electrodes formed on each side of the gate electrode, and a source electrode formed on the bottom of the substrate. When a positive gate voltage relative to the source is applied, conduction channels are formed along the sidewalls of the groove, and current flows vertically from drain to source.

Abstract: A vertical, enhancement mode InP MISFET includes a conducting n-type substrate, a semi-insulating Fe-doped InP blocking layer on the substrate, a conducting layer formed in the blocking layer, a groove which extends through both the conducting layer and the blocking layer, a borosilicate dielectric layer formed on the walls of the groove, a gate electrode formed on the dielectric layer, drain electrodes formed on each side of the gate electrode, and a source electrode formed on the bottom of the substrate. When a positive gate voltage relative to the source is applied, conduction channels are formed along the sidewalls of the groove, and current flows vertically from drain to source.

Abstract: A plurality of pairs of layers comprising gold and zinc are successively evaporated onto a p-type Group III-V semiconductor material such as indium phosphide. A final layer of gold is evaporated onto the pairs of layers prior to heating the multilayer contact. Successive layers of chromium and gold may be evaporated onto the final gold layer prior to the annealing step.