Abstract: A positioning system and a positioning method based on radio frequency identification techniques (RFID) are provided. The positioning system includes in-vehicle devices, RFID readers and a server. The in-vehicle devices each includes a positioning device, an image capturing device and an image recognition module. The positioning device obtains a positioning location. The image capturing device captures a driving image. The image recognition module identifies adjacent vehicles, adjacent license plate information, and road attributes, and calculates relative location information. Each of the RFID readers reads a vehicle tag of one of the vehicles passing by, so as to mark a reference vehicle and generate reference vehicle information. A positioning adjustment module of the server determines whether the target vehicle is a reference vehicle, has been the reference vehicle or is a non-reference vehicle, and adjusts the positioning location of the target vehicle in different ways, accordingly.

Abstract: A method includes receiving time trace sensor data associated with a substrate processing procedure. The substrate processing procedure includes two or more sets of processing conditions. At least a first set of processing conditions and a second set of processing conditions each include one or more operations performed repeatedly. The method further includes separating a first and second portion of the time trace sensor data corresponding to the first and second sets of processing conditions into a first and second plurality of cycle data. The method further includes processing the first plurality of cycle data and the second plurality of cycle data to generate summary data. The method further includes providing an alert to a user. The alert is based on the summary data.

Abstract: An electronic device manufacturing system capable of obtaining metrology data associated with a deposition process performed on a substrate according to a process recipe, wherein the deposition process generates a plurality of layers on a surface of the substrate. The manufacturing system can further obtain an expected profile associate with the process recipe, wherein the expected profile comprises a plurality of values indicative of a desired thickness for a plurality of layers of the process recipe. The manufacturing system can further generate a correction profile based on the metrology data and the expected profile, wherein the correction profile comprises a deposition time offset value for at least one layer of the plurality of layers. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe and cause a deposition step to be performed on the substrate according to the updated process recipe.

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Abstract: A display control device and a display control method for use in a portable electronic apparatus are disclosed. The portable electronic apparatus includes a main controller and a display panel. The display control device includes a digital data register in communication with the main controller for storing a digital data display signal received from the main controller, and a digital-to-analog converter in communication with the digital data register, converting the digital data display signal stored in the digital data register into an analog data display signal and outputting the analog data display signal to the display panel to be revealed. The main controller keeps on outputting refreshed digital data display signals in a normal mode, and suspends the output of any further digital data display signal in an idle mode. In the idle mode, the digital data register reiteratively outputs a last stored digital data display signal to the digital-to-analog converter.

Abstract: This invention relates to a pump container with a pick-up port, comprising a receiving portion at one end and a mouth portion at the other end of the container, a pump device having a pump fixed and enclosed within the mouth portion by a cap, the pump having a hollow tube with one end extending to the receiving portion, the other end being provided outside the mouth portion, a push button being provided at the top end of the pump device and connected with a discharge port, characterized in that an inclined surface is formed on the bottom end of the receiving portion, a pick-up port is located at the corner of the lowest point of the inclined surface. If the residue on the bottom of the pump container cannot be sucked up completely when it is about to be consumed up, the closing means is detached from the pick-up port so that the residual content on the bottom can be taken out thoroughly through the pick-up port.

Abstract: A method of processing signals of a timing controller of a liquid crystal display module, wherein the signals are processed according to a rising edge or a falling edge of a synchronizing signal to generate the control signals for the liquid crystal display module, the control signals including start vertical signals STV (including STV1 and STV2) and gate-on enable signals OE. Then, the gate clock signal CPV, STV1, STV2, and OE pause to be outputted.

Abstract: A display control device and a display control method for use in a portable electronic apparatus are disclosed. The portable electronic apparatus including a main controller and a display panel. The display control device includes a digital data register in communication with the main controller for storing a digital data display signal received from the main controller, and a digital-to-analog converter in communication with the digital data register, converting the digital data display signal stored in the digital data register into an analog data display signal and outputting the analog data display signal to the display panel to be revealed. The main controller keeps on outputting refreshed digital data display signals in a normal mode, and suspends the output of any further digital data display signal in an idle mode. In the idle mode, the digital data register reiteratively outputs a last stored digital data display signal to the digital-to-analog converter.

Abstract: A method of processing signals of a timing controller of a liquid crystal display module, wherein the signals are processed according to a rising edge or a falling edge of a synchronizing signal to generate the control signals for the liquid crystal display module, the control signals including start vertical signals STV (including STV1 and STV2) and gate-on enable signals OE. Then, the gate clock signal CPV, STV1, STV2, and OE pause to be outputted.