Patents by Inventor Chuang-Chuang Tsai
Chuang-Chuang Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11391685Abstract: A sensitive device includes a plurality of first conductive nanostructures, a conductive layer and at least one electrode. The conductive layer covers the first conductive nanostructures. An intrinsic melting point of the conductive layer is higher than that of the first conductive nanostructures. At least one of the conductive layer and the first conductive nanostructures is sensitive to gas. The electrode is electrically connected to at least one of the first conductive nanostructures and the conductive layer.Type: GrantFiled: September 12, 2017Date of Patent: July 19, 2022Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Po-Yi Chang, Hung-Chuan Liu, Yi-Ting Chou, Wei-Tsung Chen
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Patent number: 11226400Abstract: A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.Type: GrantFiled: March 19, 2020Date of Patent: January 18, 2022Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Ching-Fu Lin, Chao-Hsuan Chen, Zong-Xuan Li, Wei-Tsung Chen
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Patent number: 11165033Abstract: An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.Type: GrantFiled: May 20, 2020Date of Patent: November 2, 2021Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chao-Hsuan Chen, Cheng-Hang Hsu
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Patent number: 11114570Abstract: A memory structure includes a substrate, a gate electrode, a first isolation layer, a thin metal layer, indium gallium zinc oxide (IGZO) particles, a second isolation layer, an IGZO channel layer, and a source/drain electrode. The gate electrode is located on the substrate. The first isolation layer is located on the gate electrode. The thin metal layer is located on the first isolation layer, and has metal particles. The IGZO particles are located on the metal particles. The second isolation layer is located on the IGZO particles. The IGZO channel layer is located on the second isolation layer. The source/drain electrode is located on the IGZO channel layer.Type: GrantFiled: April 12, 2020Date of Patent: September 7, 2021Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Ching-Fu Lin, Zong-Xuan Li, Wei-Tsung Chen
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Patent number: 11041822Abstract: A sensing element includes a conductive substrate, a zinc oxide seed layer, a plurality of zinc oxide nanorods, a film with an electrical double layer, and an organic sensing layer. The zinc oxide seed layer is located on the conductive substrate. The zinc oxide nanorods extend from the zinc oxide seed layer. The film with the electrical double layer covers the zinc oxide nanorods. The organic sensing layer is located on the film with the electrical double layer.Type: GrantFiled: August 22, 2018Date of Patent: June 22, 2021Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Yu-Nung Mao, Hung-Chuan Liu, Zong-Xuan Li, Wei-Tsung Chen
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Patent number: 10879362Abstract: A transistor including a substrate, a source, a drain, an active portion, a fin-shaped gate, and an insulation layer is provided. The source is located on the substrate. The drain is located on the substrate. The active portion connects the source and the drain. The fin-shaped gate wraps the active portion. A first portion of the insulation layer separates the fin-shaped gate from the active portion, a second portion of the insulation layer separates the fin-shaped gate from the substrate, a third portion of the insulation layer separates the fin-shaped gate from the source and from the drain, and a fourth portion of the insulation layer is located on a surface of the fin-shaped gate facing away from the active portion. Here, the insulation layer is integrally formed.Type: GrantFiled: August 8, 2018Date of Patent: December 29, 2020Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Hsin Chiao, Wei-Tsung Chen
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Publication number: 20200343385Abstract: A memory structure includes a substrate, a gate electrode, a first isolation layer, a thin metal layer, indium gallium zinc oxide (IGZO) particles, a second isolation layer, an IGZO channel layer, and a source/drain electrode. The gate electrode is located on the substrate. The first isolation layer is located on the gate electrode. The thin metal layer is located on the first isolation layer, and has metal particles. The IGZO particles are located on the metal particles. The second isolation layer is located on the IGZO particles. The IGZO channel layer is located on the second isolation layer. The source/drain electrode is located on the IGZO channel layer.Type: ApplicationFiled: April 12, 2020Publication date: October 29, 2020Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Ching-Fu LIN, Zong-Xuan LI, Wei-Tsung CHEN
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Publication number: 20200300976Abstract: A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.Type: ApplicationFiled: March 19, 2020Publication date: September 24, 2020Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Ching-Fu LIN, Chao-Hsuan CHEN, Zong-Xuan LI, Wei-Tsung CHEN
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Publication number: 20200287147Abstract: An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.Type: ApplicationFiled: May 20, 2020Publication date: September 10, 2020Applicant: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chao-Hsuan Chen, Cheng-Hang Hsu
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Patent number: 10326088Abstract: An organic thin film transistor includes a substrate, a hydrophobic layer, an oxide layer, a hydrophilic layer, a semiconductor layer, and a source/drain layer. The hydrophobic layer covers a surface of the substrate. The oxide layer is located on the hydrophobic layer and has plural segments. The hydrophilic layer is located on the segments of the oxide layer, and the oxide layer is located between the hydrophilic layer and the hydrophobic layer. The semiconductor layer is located on the hydrophilic layer, and the hydrophilic layer is located between the semiconductor layer and the oxide layer. The source/drain layer connects across the semiconductor layer on the segments of the oxide layer.Type: GrantFiled: March 29, 2018Date of Patent: June 18, 2019Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chun-Chih Chen, Hung-Chuan Liu, Zong-Xuan Li, Wei-Tsung Chen
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Patent number: 10263089Abstract: A transistor including a substrate, a gate layer, a first insulating layer, an active layer, a source and a drain is provided. The gate layer is disposed on the first insulating layer, and has a plurality of first through holes. The first insulating layer covers the gate layer and a part of the substrate exposed by the first through holes, and forms a plurality of recesses respectively corresponding to the first through holes. The active layer is disposed on the first insulating layer, and has a plurality of second through holes. The second through holes communicate with the recesses, respectively. The source is disposed on a part of the active layer. The drain is disposed on another part of the active layer. A manufacturing method of the transistor is also provided.Type: GrantFiled: May 8, 2015Date of Patent: April 16, 2019Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chia-Wei Chou, Cheng-Hang Hsu
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Publication number: 20190079040Abstract: A sensing element includes a conductive substrate, a zinc oxide seed layer, a plurality of zinc oxide nanorods, a film with an electrical double layer, and an organic sensing layer. The zinc oxide seed layer is located on the conductive substrate. The zinc oxide nanorods extend from the zinc oxide seed layer. The film with the electrical double layer covers the zinc oxide nanorods. The organic sensing layer is located on the film with the electrical double layer.Type: ApplicationFiled: August 22, 2018Publication date: March 14, 2019Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Yu-Nung MAO, Hung-Chuan LIU, Zong-Xuan LI, Wei-Tsung CHEN
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Publication number: 20180350923Abstract: A transistor including a substrate, a source, a drain, an active portion, a fin-shaped gate, and an insulation layer is provided. The source is located on the substrate. The drain is located on the substrate. The active portion connects the source and the drain. The fin-shaped gate wraps the active portion. A first portion of the insulation layer separates the fin-shaped gate from the active portion, a second portion of the insulation layer separates the fin-shaped gate from the substrate, a third portion of the insulation layer separates the fin-shaped gate from the source and from the drain, and a fourth portion of the insulation layer is located on a surface of the fin-shaped gate facing away from the active portion. Here, the insulation layer is integrally formed.Type: ApplicationFiled: August 8, 2018Publication date: December 6, 2018Applicant: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Hsin Chiao, Wei-Tsung Chen
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Publication number: 20180294422Abstract: An organic thin film transistor includes a substrate, a hydrophobic layer, an oxide layer, a hydrophilic layer, a semiconductor layer, and a source/drain layer. The hydrophobic layer covers a surface of the substrate. The oxide layer is located on the hydrophobic layer and has plural segments. The hydrophilic layer is located on the segments of the oxide layer, and the oxide layer is located between the hydrophilic layer and the hydrophobic layer. The semiconductor layer is located on the hydrophilic layer, and the hydrophilic layer is located between the semiconductor layer and the oxide layer. The source/drain layer connects across the semiconductor layer on the segments of the oxide layer.Type: ApplicationFiled: March 29, 2018Publication date: October 11, 2018Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Chun-Chih CHEN, Hung-Chuan LIU, Zong-Xuan LI, Wei-Tsung CHEN
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Patent number: 10079283Abstract: A manufacturing method of a transistor is provided, and the method includes: providing a base; forming a fin-shaped gate on the base; covering the fin-shaped gate with an insulation layer; providing a substrate; forming a partially cured sol-gel on the substrate; inserting the fin-shaped gate into the partially cured sol-gel, so that a portion of the fin-shaped gate is uncovered by the partially cured sol-gel; after inserting the fin-shaped gate into the partially cured sol-gel, curing the partially cured sol-gel; and processing a portion of the partially cured sol-gel not overlapping with the fin-shaped gate to increase conductivity of the portion of the partially cured sol-gel.Type: GrantFiled: September 30, 2016Date of Patent: September 18, 2018Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Hsin Chiao, Wei-Tsung Chen
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Publication number: 20180128762Abstract: A sensitive device includes a plurality of first conductive nanostructures, a conductive layer and at least one electrode. The conductive layer covers the first conductive nanostructures. An intrinsic melting point of the conductive layer is higher than that of the first conductive nanostructures. At least one of the conductive layer and the first conductive nanostructures is sensitive to gas. The electrode is electrically connected to at least one of the first conductive nanostructures and the conductive layer.Type: ApplicationFiled: September 12, 2017Publication date: May 10, 2018Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Po-Yi CHANG, Hung-Chuan LIU, Yi-Ting CHOU, Wei-Tsung CHEN
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Patent number: 9766389Abstract: A display device includes a reflective cover, a light guide plate, and a display device. The reflective cover has an opening confined by a top inner surface, at least one side inner surface, and a bottom inner surface of the reflective cover. The light guide plate has a top surface, a bottom surface, and a side face connected to the top surface and the bottom surface, a part of the top surface is covered by the top inner surface of the reflective cover. The display device is placed under the light guide plate and a partial surface of the display device is covered by the bottom inner surface of the reflective cover. The reflective cover bonds the light guide plate and the display device together.Type: GrantFiled: July 27, 2015Date of Patent: September 19, 2017Assignee: E INK HOLDINGS INC.Inventors: Hsin-Tao Huang, Chuang-Chuang Tsai
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Patent number: 9748482Abstract: A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.Type: GrantFiled: December 9, 2014Date of Patent: August 29, 2017Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Pei-Chen Yu, Ming-Yen Chuang, Chia-Chun Yeh
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Patent number: 9647138Abstract: A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.Type: GrantFiled: May 25, 2012Date of Patent: May 9, 2017Assignee: E INK HOLDINGS INC.Inventors: Chuang-Chuang Tsai, Hsiao-Wen Zan, Hsin-Fei Meng, Chun-Cheng Yeh
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Publication number: 20170018616Abstract: A manufacturing method of a transistor is provided, and the method includes: providing a base; forming a fin-shaped gate on the base; covering the fin-shaped gate with an insulation layer; providing a substrate; forming a partially cured sol-gel on the substrate; inserting the fin-shaped gate into the partially cured sol-gel, so that a portion of the fin-shaped gate is uncovered by the partially cured sol-gel; after inserting the fin-shaped gate into the partially cured sol-gel, curing the partially cured sol-gel; and processing a portion of the partially cured sol-gel not overlapping with the fin-shaped gate to increase conductivity of the portion of the partially cured sol-gel.Type: ApplicationFiled: September 30, 2016Publication date: January 19, 2017Applicant: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Hsin Chiao, Wei-Tsung Chen