Patents by Inventor Chuhee Kwon

Chuhee Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Superconducting structure
    Patent number: 6943136
    Abstract: A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: September 13, 2005
    Assignee: The Regents of the University of California
    Inventors: Chuhee Kwon, Quanxi Jia, Stephen R. Foltyn
  • Superconducting structure including mixed rare earth barium-copper compositions
    Patent number: 6602588
    Abstract: A superconductive structure including a dielectric oxide substrate and a thin layer of a rare earth-barium-copper oxide superconducting film thereon, the thin layer including at least two rare earth elements is provided.
    Type: Grant
    Filed: March 14, 2001
    Date of Patent: August 5, 2003
    Assignee: The Regents of the University of California
    Inventors: Chuhee Kwon, Quanxi Jia, Stephen R. Foltyn, James L. Smith, Eric J. Peterson, William Larry Hults
  • Superconducting structure
    Publication number: 20030125213
    Abstract: A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.
    Type: Application
    Filed: December 17, 2002
    Publication date: July 3, 2003
    Inventors: Chuhee Kwon, Quanxi Jia, Stephen R. Foltyn
  • Superconducting structure
    Patent number: 6541136
    Abstract: A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: April 1, 2003
    Assignee: The Regents of the University of California
    Inventors: Chuhee Kwon, Quanxi Jia, Stephen R. Foltyn
  • Ramp-edge structured tunneling devices using ferromagnet electrodes
    Patent number: 6445024
    Abstract: The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La0.7Sr0.3) MnO3, ferromagnetic electrodes and a SrTiO3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.
    Type: Grant
    Filed: January 25, 2000
    Date of Patent: September 3, 2002
    Assignee: The United States of America, as represented by the Department of Energy
    Inventors: Chuhee Kwon, Quanxi Jia