Patents by Inventor Chui-fu Chiu
Chui-fu Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9017926Abstract: A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.Type: GrantFiled: September 5, 2012Date of Patent: April 28, 2015Assignee: Nanya Technology CorporationInventor: Chui-Fu Chiu
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Patent number: 8745546Abstract: A mask overlay method, and a mask and a semiconductor device using the same are disclosed. According to the disclosed mask overlay technique, test marks and front layer overlay marks corresponding to a plurality of overlay mark designs are generated in a first layer of a semiconductor device. The test patterns generating the test marks each include a first sub pattern and a second sub pattern. Note that the first sub pattern has the same design as a front layer overlay pattern (which generates the front layer overlay mark corresponding thereto). Based on the test marks, performances of the plurality of overlay mark designs are graded. The front layer overlay mark corresponding to the overlay mark design having the best performance is regarded as an overlay reference for a mask of a second layer of the semiconductor device.Type: GrantFiled: December 29, 2011Date of Patent: June 3, 2014Assignee: Nanya Technology CorporationInventor: Chui-Fu Chiu
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Publication number: 20140065380Abstract: A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.Type: ApplicationFiled: September 5, 2012Publication date: March 6, 2014Applicant: NANYA TECHNOLOGY CORPORATIONInventor: Chui-Fu Chiu
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Patent number: 8535858Abstract: The present invention relates to a photomask and a method for forming an overlay mark in a substrate using the same. The photomask comprises a plurality of patterns. At least one of the patterns comprises a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas. When the photomask is applied in a photolithography process, the formed overlay mark has a large thickness. Therefore, the contrast is high when a metrology process is performed, and it is easy to find the overlay mark.Type: GrantFiled: February 25, 2013Date of Patent: September 17, 2013Assignee: Nanya Technology Corp.Inventor: Chui Fu Chiu
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Publication number: 20130168877Abstract: A mask overlay method, and a mask and a semiconductor device using the same are disclosed. According to the disclosed mask overlay technique, test marks and front layer overlay marks corresponding to a plurality of overlay mark designs are generated in a first layer of a semiconductor device. The test patterns generating the test marks each include a first sub pattern and a second sub pattern. Note that the first sub pattern has the same design as a front layer overlay pattern (which generates the front layer overlay mark corresponding thereto). Based on the test marks, performances of the plurality of overlay mark designs are graded. The front layer overlay mark corresponding to the overlay mark design having the best performance is regarded as an overlay reference for a mask of a second layer of the semiconductor device.Type: ApplicationFiled: December 29, 2011Publication date: July 4, 2013Applicant: NANYA TECHNOLOGY CORPORATIONInventor: CHUI-FU CHIU
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Publication number: 20130147129Abstract: A wafer supporting structure for improving the critical dimension uniformity of a wafer, including: a chuck, a plurality of pin holes, and a platform positioned under the chuck. The chick has a surface and configured to receive a wafer thereon, the plurality of pin holes form through the chuck, and the platform comprises a plurality of movable pieces which support corresponding pins, wherein the pins are configured to move in a direction perpendicularly protruding from or sinking into the surface of the chuck. The movable piece has one end supporting the bottom of the pin and the other end subjected to an pneumatic pressure, hydraulic pressure, or piezoelectricity.Type: ApplicationFiled: December 8, 2011Publication date: June 13, 2013Applicant: NAN YA TECHNOLOGY CORPORATIONInventor: Chui Fu Chiu
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Publication number: 20120308788Abstract: An overlay mark set includes a substrate, a first overlay mark and a second overlay mark. The first overlay mark is disposed on the substrate for representing a first layout pattern. The second overlay mark is also disposed on the substrate for representing a second layout pattern. In particular, the first overlay mark is in direct contact with the second overlay mark.Type: ApplicationFiled: May 31, 2011Publication date: December 6, 2012Inventors: Chui-Fu Chiu, Chun-Yen Huang
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Publication number: 20120299204Abstract: A method for fabricating an overlay mark, including the steps of: forming a patterned layer on a substrate, wherein the patterned layer comprises at least one mark element forming region, wherein each mark element forming region comprises two column recesses and a plurality of row recesses, and the row recesses connect the two column recesses; growing a mark material from the sidewalls of the column recesses and the row recesses so that the mark material merges in the column recesses and the row recesses; and removing the patterned layer. Consequently, an overlay mark including mark elements with high image contrast is fabricated.Type: ApplicationFiled: May 26, 2011Publication date: November 29, 2012Applicant: NANYA TECHNOLOGY CORPORATIONInventor: Chui Fu Chiu
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Publication number: 20120237857Abstract: The present invention relates to a photomask and a method for forming an overlay mark in a substrate using the same. The photomask comprises a plurality of patterns. At least one of the patterns comprises a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas. When the photomask is applied in a photolithography process, the formed overlay mark has a large thickness. Therefore, the contrast is high when a metrology process is performed, and it is easy to find the overlay mark.Type: ApplicationFiled: March 16, 2011Publication date: September 20, 2012Applicant: NANYA TECHNOLOGY CORP.Inventor: Chui Fu CHIU
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Publication number: 20120140193Abstract: A dynamic wafer alignment method and an exposure scanner system are provided. The exposure scanner system having a scan path, includes an exposure apparatus, an optical sensor apparatus and a wafer stage.Type: ApplicationFiled: December 3, 2010Publication date: June 7, 2012Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Chui-Fu Chiu, Chiang-Lin Shih
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Patent number: 8143731Abstract: An integrated alignment and overlay mark includes a pre-layer pattern for reticle-to-wafer registration implemented in an exposure tool, and a current-layer pattern incorporated with the pre-layer pattern. The pre-layer pattern and the current-layer pattern constitute an overlay mark for determining registration accuracy between two patterned layers on a semiconductor wafer.Type: GrantFiled: July 14, 2009Date of Patent: March 27, 2012Assignee: Nanya Technology Corp.Inventor: Chui-Fu Chiu
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Patent number: 7933015Abstract: A mark for alignment and overlay, a mask having the same, and a method of using the same are provided. The mark includes a first mark pattern and a second mark pattern. The first mark pattern includes a first pattern and a second pattern, and the second mark pattern includes a third pattern and a fourth pattern. The first pattern includes a plurality of rectangular regions arranged in a first direction, and for each rectangular region, a sideline in a second direction is longer than a sideline in the first direction, wherein the first direction is perpendicular to the second direction. The second pattern is disposed on both sides of the first pattern in the second direction and includes a plurality of rectangular regions arranged in the second direction, and for each rectangular region, the sideline in the first direction is longer than a sideline in the second direction.Type: GrantFiled: February 22, 2008Date of Patent: April 26, 2011Assignee: Nanya Technology Corp.Inventors: Chui-Fu Chiu, Jung-Chih Kuo
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Publication number: 20110012271Abstract: An integrated alignment and overlay mark includes a pre-layer pattern for reticle-to-wafer registration implemented in an exposure tool, and a current-layer pattern incorporated with the pre-layer pattern. The pre-layer pattern and the current-layer pattern constitute an overlay mark for determining registration accuracy between two patterned layers on a semiconductor wafer.Type: ApplicationFiled: July 14, 2009Publication date: January 20, 2011Inventor: Chui-Fu Chiu
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Patent number: 7582395Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.Type: GrantFiled: August 31, 2006Date of Patent: September 1, 2009Assignee: Nanya Technology CorporationInventors: Chui-fu Chiu, Wen-Bin Wu
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Publication number: 20090040536Abstract: A mark for alignment and overlay, a mask having the same, and a method of using the same are provided. The mark includes a first mark pattern and a second mark pattern. The first mark pattern includes a first pattern and a second pattern, and the second mark pattern includes a third pattern and a fourth pattern. The first pattern includes a plurality of rectangular regions arranged in a first direction, and for each rectangular region, a sideline in a second direction is longer than a sideline in the first direction, wherein the first direction is perpendicular to the second direction. The second pattern is disposed on both sides of the first pattern in the second direction and includes a plurality of rectangular regions arranged in the second direction, and for each rectangular region, the sideline in the first direction is longer than a sideline in the second direction.Type: ApplicationFiled: February 22, 2008Publication date: February 12, 2009Applicant: NANYA TECHNOLOGY CORP.Inventors: Chui-Fu CHIU, Jung-Chih KUO
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Patent number: 7480892Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuratType: GrantFiled: August 31, 2006Date of Patent: January 20, 2009Assignee: Nanya Technology CorporationInventors: Chui-fu Chiu, Wen-Bin Wu
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Publication number: 20080034344Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuratType: ApplicationFiled: August 31, 2006Publication date: February 7, 2008Inventors: Chui-fu Chiu, Wen-Bin Wu
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Publication number: 20080032205Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.Type: ApplicationFiled: August 31, 2006Publication date: February 7, 2008Inventors: Chui-fu Chiu, Wen-Bin Wu