Patents by Inventor Chul Soo Kim

Chul Soo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9960571
    Abstract: Novel ICL layering designs, ridge waveguide architectures, and processing protocols that will significantly lower the optical losses and improve the power conversion efficiencies of interband cascade lasers designed for both DFB single-mode and high-power applications. The semiconductor top cladding and metal contact layers are eliminated or significantly reduced. By instead using a dielectric or air top clad, or dielectric or air layers to supplement a thin top clad, in conjunction with lateral current injection and weak index-guiding, the present invention will substantially reduce the internal loss of such ICLs, resulting in lower lasing threshold, higher efficiency, and higher maximum power.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: May 1, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Charles D. Merritt, Michael V. Warren, Mijin Kim
  • Patent number: 9954511
    Abstract: A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: April 24, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Uk Son, Ho Soo Park, Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, In Sang Song, Moon Chul Lee
  • Patent number: 9950633
    Abstract: A system for charging an electric vehicle uses an in-cable control box (ICCB), and includes: an electrical connecting device for slow charging which supplies a vehicle with electricity, which is supplied through an RFID power socket when the electrical connecting device is connected to the RFID power socket, so as to charge the vehicle, in which the electrical connecting device collects information about electric energy used to charge the vehicle and information about a position where the vehicle is charged, in order to charge for electricity according to an electricity rate applicable to the vehicle.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: April 24, 2018
    Assignee: Hyundai Motor Company
    Inventors: Yeong Ju Lee, Chul Soo Kim
  • Patent number: 9929716
    Abstract: There are provided an acoustic resonator and a method of manufacturing the same. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator also includes a substrate disposed below the resonance part and including a via hole penetrating through the substrate and a connection conductor disposed in the via hole and connected to at least one of the first and second electrodes.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: March 27, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Moon Chul Lee, Duck Hwan Kim, Yeong Gyu Lee, Chul Soo Kim, Jie Ai Yu, Sang Uk Son
  • Publication number: 20180083182
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
    Type: Application
    Filed: November 30, 2017
    Publication date: March 22, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, Ho Soo PARK, Sang Uk SON, In Sang SONG, Moon Chul LEE, Cui JING
  • Patent number: 9923338
    Abstract: A DFB laser having a reduced fill factor and reduced loss. A plurality of spaced-apart contact openings are etched into a dielectric layer situated on top of a laser ridge having a DFB grating layer so that electrical contact between the metal top contact layer and the DFB gratings is made only in the etched openings, since all other areas of the top surface of the DFB-grated laser ridge are insulated from the metal contact layer by the dielectric. The size and shape of contact openings and their spacing are configured so that the ratio of the total area of the openings to the total area of the laser ridge provides a fill factor of less than 100%.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: March 20, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Mijin Kim, Charles D. Merritt
  • Publication number: 20180076378
    Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
    Type: Application
    Filed: November 27, 2017
    Publication date: March 15, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hosoo PARK, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Jeashik SHIN, Moonchul LEE
  • Publication number: 20180076377
    Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
    Type: Application
    Filed: November 27, 2017
    Publication date: March 15, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hosoo PARK, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Jeashik SHIN, Moonchul LEE
  • Patent number: 9899593
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: February 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Moon Chul Lee, Cui Jing
  • Publication number: 20170373472
    Abstract: Novel ICL layering designs, ridge waveguide architectures, and processing protocols that will significantly lower the optical losses and improve the power conversion efficiencies of interband cascade lasers designed for both DFB single-mode and high-power applications. The semiconductor top cladding and metal contact layers are eliminated or significantly reduced. By instead using a dielectric or air top clad, or dielectric or air layers to supplement a thin top clad, in conjunction with lateral current injection and weak index-guiding, the present invention will substantially reduce the internal loss of such ICLs, resulting in lower lasing threshold, higher efficiency, and higher maximum power.
    Type: Application
    Filed: June 23, 2017
    Publication date: December 28, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Charles D. Merritt, Michael V. Warren, Mijin Kim
  • Publication number: 20170366159
    Abstract: A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.
    Type: Application
    Filed: August 10, 2017
    Publication date: December 21, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jea Shik SHIN, In Sang SONG, Young Il KIM, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, Hyung Rak KIM, Jae Chun LEE
  • Patent number: 9842980
    Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: December 12, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hosoo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Jeashik Shin, Moonchul Lee
  • Publication number: 20170345958
    Abstract: Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber region is a single type-II InAs—GaSb interface situated between an n-type region comprising an AlSb/InAs n-type superlattice and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises one or more quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, an RCID in accordance with the present invention includes a thin absorber region and an nBn or pBp active core within a resonant cavity.
    Type: Application
    Filed: May 26, 2017
    Publication date: November 30, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Charles D. Merritt, Michael V. Warren, Mijin Kim
  • Patent number: 9787280
    Abstract: There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: October 10, 2017
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang Uk Son, Duck Hwan Kim, Jea Shik Shin, Yeong Gyu Lee, Chul Soo Kim, Moon Chul Lee, Ho Soo Park, Jie Ai Yu
  • Patent number: 9768753
    Abstract: A filter using bulk acoustic wave resonators (BAWRs) is provided including BAWRs connected in series or in parallel to each other. A BAWR set is configured by connecting an inductance and capacitance (L/C) element to each BAWR in series or in parallel.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: September 19, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Chun Lee, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Jea Shik Shin, Moon Chul Lee, Jing Cui
  • Publication number: 20170250672
    Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
    Type: Application
    Filed: April 24, 2017
    Publication date: August 31, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Moon Chul LEE
  • Publication number: 20170244381
    Abstract: There are provided an acoustic resonator module, and a method of manufacturing the same. An acoustic resonator module includes a resonating part disposed on a substrate and an inductor electrically connected to the resonating part, and having at least a portion disposed to be spaced apart from the substrate.
    Type: Application
    Filed: September 26, 2016
    Publication date: August 24, 2017
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: June Kyoo LEE, Chul Soo KIM, Won Kyu JEUNG
  • Patent number: 9735754
    Abstract: A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: August 15, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, In Sang Song, Young Il Kim, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Hyung Rak Kim, Jae Chun Lee
  • Patent number: 9641149
    Abstract: Provided are a matching segment circuit, to which a radio frequency (RF) is applied, and an RF integrated device using the matching segment circuit. The matching segment circuit to which an RF is applied may include an input end connected to a first RF device, a parallel segment having a first capacitor and a first inductor connected in parallel, a second inductor connected to the parallel segment in series, and an output end connected to a second RF device. The first capacitor, the first inductor, and the second inductor may be configured so that an impedance of the first RF device and an impedance of the second RF device may match.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: May 2, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Duck Hwan Kim, In Sang Song, Chul Soo Kim, Young Il Kim, Jea Shik Shin
  • Patent number: 9634643
    Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: April 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Moon Chul Lee