Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: The disclosure relates to a quantum dot structure. The quantum dot structure includes a quantum dot and a cloud-like shell covering a portion of the quantum dot and having an irregular outer surface. The quantum dot includes: a core; a first shell discontinuously around a core surface of the core; and a second shell between the core and the first shell and encapsulating the core surface of the core, wherein the second shell has an irregular outer surface.

Abstract: A terahertz wave detection chip includes a substrate and at least one detection structure. The detection structure is disposed on a surface of the substrate. The detection structure includes a metamaterial layer and a hydrophilic layer, and the hydrophilic layer is disposed on the metamaterial layer.

Abstract: A keyswitch structure includes a base, a keycap, a lift mechanism and a light-emitting part. The lift mechanism includes a first support, a second support, and a spring structure. The first support and the second support are connected to and between the base and the keycap, so that the keycap can move relative to the base in a vertical direction. The spring structure is a single structural part and is connected to the first support and the second support and drives the first support and the second support to lift the keycap in the vertical direction. The lift mechanism as a whole defines a central space that extends through the whole lift mechanism in the vertical direction. The spring structure does not enter the central space. The light-emitting part is disposed on the base corresponding to the central zone, and emits light to illuminate the keycap.

Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: Various solutions for extended reality (XR) enhancement in mobile communications are described. An apparatus establishes a communication with a network node of a wireless network. The apparatus performs an operation with respect to XR-related computation offloading from a user end to result in XR enhancement at the user end.

Abstract: A transistor structure includes a substrate, a source electrode, a drain electrode, a protective layer and a gate electrode. The source electrode and the drain electrode are provided on the substrate. The protective layer is provided on the substrate. The protective layer is provided between the source electrode and the drain electrode. The protective layer includes a SiNx layer and a SiOx layer. The SiOx layer is provided on the substrate, the SiNx layer is provided on the SiOx layer, and a through hole of the protective layer is formed to extend through the SiNx layer and the SiOx layer. The gate electrode is provided in the through hole, and the gate electrode is separated from at least part of the SiOx layer so as to form an air gap therebetween.

Abstract: An apparatus (e.g., an access point (AP) or a non-AP station (STA)) detects a non-primary subband of an operating bandwidth comprising a primary subband and the non-primary subband to be idle. The apparatus controls a transmit power in performing transmission on at least the non-primary subband.

Abstract: A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.

Abstract: An atomization module includes a main fixing member, an auxiliary fixing member, an atomization component and a piezoelectric component. The main fixing member includes a first bonding part, a second bonding part and a connecting part. The first bonding part has a first opening and a first bonding surface surrounding the first opening. The second bonding part is connected to the first bonding part, and the connecting part and the second bonding part surround the first bonding part. The auxiliary fixing member has a second opening and a second bonding surface surrounding the second opening. The piezoelectric component surrounds the first bonding part. The main fixing member has a first adhesive groove, which is jointly defined at least by the main fixing member, the auxiliary fixing member and the atomization component. The first adhesive is provided in the first adhesive groove.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a semiconductor layer disposed over a substrate, and the semiconductor layer has a first end and a second end opposite the first end. The structure further includes an epitaxial feature disposed over the substrate, and the epitaxial feature is electrically connected to the first end of the semiconductor layer. The structure further includes a first dielectric layer disposed over the substrate, and the first dielectric layer is in contact with the second end of the semiconductor layer. The structure further includes a contact etch stop layer disposed on and in contact with the first dielectric layer and an interlayer dielectric layer disposed on and in contact with the contact etch stop layer.

Abstract: A method for determining a standard depth value of a marker includes obtaining a maximum depth value of the marker. A reference depth value of the marker is obtained based on a depth image of the marker, and a Z-axis coordinate value of the marker is obtained based on a color image of the marker. When the reference depth value and the Z-axis coordinate value are both less than the maximum depth value, and a difference between the reference depth value and the Z-axis coordinate value is not greater than 0, the depth reference value is set as the standard depth value of the marker; and when the difference is greater than 0, the Z-axis coordinate value is set as the standard depth value of the marker.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A keyswitch structure includes a casing, a first support, a second support, and a pressing stem. The casing forms an accommodating space and an opening communicating with the accommodating space. The first and second supports are disposed in the accommodating space and are directly and rotatably connected with the casing; the supports are also pivotally connected with each other. The pressing stem extends into the accommodating space to be rotatably connected with the first and second supports and protrudes from the casing through the opening. The pressing stem is movable parallel to a vertical direction relative to the casing through the first and second supports. A motion of the pressing stem in the vertical direction has a top dead center and a bottom dead center. When the pressing stem is at the top dead center and the bottom dead center, it does not touch the casing in the vertical direction.

Abstract: The present disclosure relates to systems and methods for real and virtual object interactions in augmented reality environments are disclosed. The system comprises areal object detection module to receive multiple image pixels and the corresponding depths of at least one initiative object, a real object recognition module to determine a shape, a position, and a movement of the initiative object; a virtual object display module to display a virtual target object, a collision module to determine whether the at least one initiative object collides into a virtual target object and, an interaction module for determining an action responding to an event based on at least one of an object recognition determination from the real object recognition module, a collision determination from the collision module, and a type of the virtual target object.

Abstract: A computer implemented method for managing the scope of permissions granted by users to application that includes collecting a set of permissions for an application from an application provider publication; and collecting a process flow for functional steps of the application from a review of the application that is published on a product review type publication. The computer implemented method further includes dividing the functional steps of the application into a plurality of journeys, each of said plurality of journeys having a function associated with a stage of a functional step from a perspective of a user; and matching permissions from the set of permissions for each journey of said plurality of journeys to provide matched permissible permissions to journeys stored in a customer journey store.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.