Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.

Abstract: A planar transformer is configured on a multi-layer circuit board of a resonant converter. The planar transformer includes multiple layers of primary-side traces, multiple layers of secondary-side traces, and an iron core. The primary-side traces serve as a primary-side coil of the transformer to generate a first direction magnetic flux when the resonant converter operates. The secondary-side traces serve as a secondary-side coil of the transformer to generate a second direction magnetic flux when the resonant converter operates. The primary-side traces and the secondary-side traces surround a first core pillar and the second core pillar, and the primary-side traces and the secondary-side traces are configured in a specific stacked structure on the multi-layer circuit board, so that a magnetomotive force of the planar transformer can maintain balance during the operation of the resonant converter.

Abstract: The present disclosure is related to a lead frame structure. The lead frame structure includes a bottom board and a blocking wall. The bottom board has a first conductive portion and a second conductive portion. The first conductive portion separates from the second conductive portion. The first and second conductive portions are configured to electrically connect to a light source. The blocking wall is located on the bottom board, and the blocking wall surrounds an opening. The first and the second conductive portions are exposed from the opening. The first and the second conductive portions each have an extending portion. The extending portion extends beyond an external surface of the blocking wall in a horizontal direction.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference signals. A transmitter transmits an output command and address signal to a memory device according to the reference signals. A signal training circuit executes a training process in a training mode that includes steps outlined below. A training signal is generated such that the training signal is transmitted as the output command and address signal. The training signal and the data signal generated by the memory device are compared to generate a comparison result indicating whether the data signal matches the training signal. The comparison result is stored. The clock generation circuit is controlled to modify a phase of at least one of the reference signals to be one of a plurality of under-test phases to execute a new loop of the training process until all the under-test phases are trained.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference clock signals. Each of access signal transmission circuits each includes a duty cycle adjusting circuit, a duty cycle detection circuit, a frequency division circuit and an asynchronous first-in-first-out circuit. The duty cycle adjusting circuit performs duty cycle adjustment on one of the reference clock signals according to a duty cycle detection signal to generate an output clock signal having a duty cycle. The duty cycle detection circuit detects a variation of the duty cycle to generate the duty cycle detection signal. The frequency division circuit divides a frequency of the output clock signal to generate a read clock signal. The asynchronous first-in-first-out circuit receives an access signal from a memory access controller and outputs an output access signal according to the read clock signal to access the memory device accordingly.

Abstract: An image sensor includes a group of sensor units and a color filter layer disposed within the group of sensor units. The image sensor further includes a dielectric structure and a plurality of polarization splitters disposed corresponding to the color filter layer. Each of the plurality of polarization splitters has a first meta element extending in a first direction from top view and a second meta element extending in a second direction from top view. The second direction is perpendicular to the first direction.

Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: A video decoder can be configured to determine that a current block in a current picture of the video data is coded in an affine prediction mode; determine one or more control-point motion vectors (CPMVs) for the current block; identify an initial prediction block for the current block in a reference picture using the one or more CPMVs; determine a current template for the current block in the current picture; and determine an initial reference template for the initial prediction block in the reference picture; and perform a motion vector refinement process to determine a modified prediction block based on a comparison of the current template to the initial reference template.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: An example device for decoding video data includes one or more processors implemented in circuitry and configured to: generate an inter-prediction block for a current block of video data; generate an intra-prediction block for the current block of video data; generate a final prediction block for the current block of video data from the inter-prediction block and the intra-prediction block, including performing each of combined inter/intra prediction (CIIP) mode, overlapped block motion compensation (OBMC), and luma mapping with chroma scaling (LMCS) while generating the final prediction block; and decode the current block of video data using the final prediction block. To generate the final prediction block, the processors may perform LMCS on a first inter-prediction sub-block, combine the LMCS-mapped first inter-prediction sub-block with the intra-prediction block using CIIP, and perform OBMC between the first CIIP prediction block and a second inter-prediction sub-block.

Abstract: A display device includes M sets of light emitters and (M+1) sets of drivers, wherein M is a positive integer. Each set of the (M+1) sets of drivers is coupled to at least one set of the M sets of light emitters. When a first set of drivers among the (M+1) sets of drivers are configured to perform a sensing operation, M sets of drivers other than the first set of drivers among the (M+1) sets of drivers are configured to drive the M sets of light emitters, respectively.

Abstract: A display device includes M sets of light emitters and (M+1) sets of drivers, wherein M is a positive integer. Each set of the (M+1) sets of drivers is coupled to at least one set of the M sets of light emitters. When a first set of drivers among the (M+1) sets of drivers are configured to perform a sensing operation, M sets of drivers other than the first set of drivers among the (M+1) sets of drivers are configured to drive the M sets of light emitters, respectively.

Abstract: A signal receiving apparatus includes a clock and data recovery (CDR) circuit, a first sampler, and at least one deskew circuit. The CDR circuit receives a first signal through a first lane of the signal receiving apparatus and decodes the first signal to extract a first clock signal from the first signal. The CDR circuit provides the first clock signal to the first sampler and the least one deskew circuit. The first sampler receives the first signal through the first lane of the signal receiving apparatus. The first sampler samples the first signal based on the first clock signal to generate a first output signal. The at least one deskew circuit receives a second signal through at least one second lane of the signal receiving apparatus and adjusts a phase skew between the first clock signal and the second signal so as to generate a second output signal.

Abstract: A power-on-detection (POD) circuit includes a detection circuit, first and second comparison circuits, and logic circuitry. The detection circuit includes a capacitor configured to charge from a first voltage level to a second voltage level. The first comparison circuit is configured to compare a third voltage level to a reference voltage level, and the second comparison circuit is configured to compare a fourth voltage level to the reference voltage level. The third and fourth levels are based on the second voltage level. The logic circuitry is coupled to an output of the first comparison circuit and to an output of the second comparison circuit and is configured to output a power identification signal based on the outputs of the first and second comparison circuits. The detection circuit is configured to turn on the first and second comparison circuits based on a voltage level of the capacitor.

Abstract: A composite fiber is provided. The composite fiber includes a first region and a second region. The component of the first region includes a coloring agent and a resin. The component of the second region includes a crosslinked thermoplastic polymer and the crosslinked thermoplastic polymer includes gel particles with an average particle size no more than 1000 nm. A method for forming the composite fiber is also provided.

Abstract: The sensing apparatus includes a sensor and a sampling amplifier. The sensor includes switches, capacitors and gain amplifiers. Second terminals of first and second switches respectively coupled to first and second terminals of third switch. First and second terminals of the first capacitor respectively coupled to a reference voltage and the second terminal of the first switch. Input terminals of the first and the second gain amplifiers respectively coupled to the second terminals of the first and the second switches, and output terminals of the first and the second gain amplifiers respectively coupled to the first and the second input terminals of the sampling amplifier. The first terminal of the second switch coupled to a common mode voltage. The first terminal of the first switch coupled to the pixel circuit via the data line of the display panel.

Abstract: The sensing apparatus includes a sensor and a sampling amplifier. The sensor includes switches, capacitors and gain amplifiers. Second terminals of first and second switches respectively coupled to first and second terminals of third switch. First and second terminals of the first capacitor respectively coupled to a reference voltage and the second terminal of the first switch. Input terminals of the first and the second gain amplifiers respectively coupled to the second terminals of the first and the second switches, and output terminals of the first and the second gain amplifiers respectively coupled to the first and the second input terminals of the sampling amplifier. The first terminal of the second switch coupled to a common mode voltage. The first terminal of the first switch coupled to the pixel circuit via the data line of the display panel.