Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.

Abstract: The present disclosure relates to a semiconductor device package which includes a carrier, an electronic component disposed on the carrier, and a package body disposed on the carrier and encapsulating the electronic component. A shield is disposed on the package body. The shield includes multiple non-magnetic conductive layers, multiple insulating layers and multiple magnetic conductive layers. At least one of the insulating layers is located between each non-magnetic conductive layer and a neighboring magnetic conductive layer.

Abstract: The present disclosure relates to a semiconductor device package which includes a carrier, an electronic component disposed on the carrier, and a package body disposed on the carrier and encapsulating the electronic component. A shield is disposed on the package body. The shield includes multiple non-magnetic conductive layers, multiple insulating layers and multiple magnetic conductive layers. At least one of the insulating layers is located between each non-magnetic conductive layer and a neighboring magnetic conductive layer.

Abstract: The present disclosure relates to a semiconductor device package which includes a carrier, an electronic component, conductive elements, a package body, a shield, a magnetic insulating layer, and a patterned conductive layer. The carrier has a top surface on which the electronic component is disposed. The conductive elements are disposed on the top surface of the carrier. The package body is disposed on the top surface of the carrier and encapsulates the electronic component and a portion of each of the conductive elements. The shield is disposed on the package body and covers an exterior of the package body. The magnetic insulating layer is disposed on a top surface of the shield. The patterned conductive layer is disposed on the magnetic insulating layer. Each of the conductive elements electrically connects the patterned conductive layer to the electronic component.

Abstract: A shock absorber has an outer tube, an inner tub, a piston rod, a piston and a damping device. The inner tube is slidably inserted into the outer tube and has an inner space with an inner diameter. The piston is securely mounted on the piston rod, is slidably held inside the inner tube to divide the inner space of the inner tube into two segments and has at least one channel. The damping device has a plug and a sleeve. The plug is securely attached to the piston and has a diameter. The sleeve is securely mounted in the inner tube and has an inner diameter. The diameter of the plug is smaller than the inner diameters of the inner tube and the sleeve. The inner diameter of the sleeve is smaller than that of the inner tube.