Patents by Inventor Chun-Chieh Mo

Chun-Chieh Mo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20190036013
    Abstract: A magnetoresistive random access memory (MRAM) structure and a method of forming the same are provided. The MRAM structure includes a conductive pillar over a substrate, a first MTJ spacer and a first conductive layer. The first MTJ spacer surrounds the conductive pillar. The first conductive layer surrounds the first MTJ spacer. The first magnetic tunnel junction (MTJ) spacer includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) layer. The first electrode is in contact with the conductive pillar and the substrate. The second electrode is positioned over the first electrode and in contact with the first conductive layer. The magnetic tunnel junction (MTJ) layer is positioned between the first electrode and the second electrode.
    Type: Application
    Filed: July 31, 2017
    Publication date: January 31, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh MO, Tsai-Hao HUNG, Shih-Chi KUO
  • MRAM devices and methods of forming the same
    Patent number: 9972771
    Abstract: MRAM devices and methods of forming the same are provided. One of the MRAM devices includes a dielectric layer, a resistance variable memory cell and a conductive layer. The dielectric layer is over a substrate and has an opening. The resistance variable memory cell is in the opening and includes a first electrode, a second electrode and a magnetic tunnel junction layer between the first electrode and the second electrode. The conductive layer fills a remaining portion of the opening and is electrically connected to one of the first electrode and the second electrode of the resistance variable memory cell.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: May 15, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Mo, Shih-Chi Kuo, Tsung-Hsien Lee, Wu-An Weng, Chung-Yu Lin
  • MRAM DEVICES AND METHODS OF FORMING THE SAME
    Publication number: 20170279036
    Abstract: MRAM devices and methods of forming the same are provided. One of the MRAM devices includes a dielectric layer, a resistance variable memory cell and a conductive layer. The dielectric layer is over a substrate and has an opening. The resistance variable memory cell is in the opening and includes a first electrode, a second electrode and a magnetic tunnel junction layer between the first electrode and the second electrode. The conductive layer fills a remaining portion of the opening and is electrically connected to one of the first electrode and the second electrode of the resistance variable memory cell.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 28, 2017
    Inventors: Chun-Chieh Mo, Shih-Chi Kuo, Tsung-Hsien Lee, Wu-An Weng, Chung-Yu Lin