Patents by Inventor Chun-Chih Ho
Chun-Chih Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11971659Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.Type: GrantFiled: September 26, 2019Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih Ho, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20240136299Abstract: A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Wei-Yu Chen, Chun-Chih Chuang, Kuan-Lin Ho, Yu-Min Liang, Jiun Yi Wu
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Publication number: 20240126170Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.Type: ApplicationFiled: May 22, 2023Publication date: April 18, 2024Inventors: Chun-Chih HO, Chin-Hsiang Lin, Ching-Yu Chang
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Publication number: 20240118618Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.Type: ApplicationFiled: April 12, 2023Publication date: April 11, 2024Inventors: Chun-Chih HO, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20240103375Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.Type: ApplicationFiled: November 29, 2023Publication date: March 28, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
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Patent number: 11942322Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.Type: GrantFiled: April 9, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: An-Ren Zi, Chun-Chih Ho, Yahru Cheng, Ching-Yu Chang
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Patent number: 11886121Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.Type: GrantFiled: May 27, 2020Date of Patent: January 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih Ho, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20230393478Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The underlayer includes a polymer having a photocleavable functional group. A photoresist layer is formed over the underlayer. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed to form a photoresist pattern.Type: ApplicationFiled: August 7, 2023Publication date: December 7, 2023Inventors: Chun-Chih HO, Chin-Hsiang LIN, Ching-Yu CHANG
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Publication number: 20230386840Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Inventors: An-Ren ZI, Chun-Chih HO, Yahru CHENG, Ching-Yu CHANG
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Publication number: 20230238275Abstract: A method of forming a semiconductor device includes forming a plurality of non-insulator structures on a substrate, the plurality of non-insulator structures being spaced apart by trenches, forming a sacrificial layer overfilling the trenches, reflowing the sacrificial layer at an elevated temperature, wherein a top surface of the sacrificial layer after the reflowing is lower than a top surface of the sacrificial layer before the reflowing, etching back the sacrificial layer to lower the top surface of the sacrificial layer to fall below top surfaces of the plurality of non-insulator structures, forming a dielectric layer on the sacrificial layer, and removing the sacrificial layer to form air gaps below the dielectric layer.Type: ApplicationFiled: April 14, 2022Publication date: July 27, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chih HO, Yu-Chung SU, Ching-Yu CHANG, Chin-Hsiang LIN
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Publication number: 20230028673Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.Type: ApplicationFiled: July 25, 2022Publication date: January 26, 2023Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
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Publication number: 20210366711Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.Type: ApplicationFiled: April 9, 2021Publication date: November 25, 2021Inventors: An-Ren ZI, Chun-Chih HO, Yahru CHENG, Ching-Yu CHANG
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Publication number: 20210200091Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The underlayer includes a polymer having a photocleavable functional group. A photoresist layer is formed over the underlayer. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed to form a photoresist pattern.Type: ApplicationFiled: November 18, 2020Publication date: July 1, 2021Inventors: Chun-Chih HO, Chin-Hsiang LIN, Ching-Yu CHANG
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Patent number: 11022885Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.Type: GrantFiled: August 31, 2018Date of Patent: June 1, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih Ho, Kuan-Hsin Lo, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20210063888Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.Type: ApplicationFiled: May 27, 2020Publication date: March 4, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
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Patent number: 10838304Abstract: Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.Type: GrantFiled: August 13, 2018Date of Patent: November 17, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih Ho, An-Ren Zi, Ching-Yu Chang
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Publication number: 20200272051Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.Type: ApplicationFiled: September 26, 2019Publication date: August 27, 2020Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
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Publication number: 20200073243Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.Type: ApplicationFiled: August 31, 2018Publication date: March 5, 2020Inventors: Chun-Chih Ho, Kuan-Hsin Lo, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20200050109Abstract: Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.Type: ApplicationFiled: August 13, 2018Publication date: February 13, 2020Inventors: Chun-Chih Ho, An-Ren Zi, Ching-Yu Chang
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Patent number: 9650495Abstract: The invention is related to a manufacturing method for enhancing an ordered structure of block copolymers, and more particularly to a thermal annealing process for block copolymers having conducting polymers and rod segments. The manufacturing method includes the following steps: (A) providing a block copolymer and a small molecule additive, wherein the block copolymer is formed of first monomers containing at least one aromatic ring and second monomers optionally containing at least one aromatic ring; and the small molecule additive is a aliphatic molecule, an aromatic molecule or a combination thereof; (B) blending the block copolymer and the small molecule additive to form a mixture; and (C) treating the mixture with a thermal annealing process to manufacture and facilitate the ordered structure of the block copolymers.Type: GrantFiled: January 29, 2014Date of Patent: May 16, 2017Assignee: NATIONAL TAIWAN UNIVERSITYInventors: Wei-Fang Su, Shang-Jung Wu, Chun-Chih Ho