Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A method for storing data is disclosed. The method is used for storing data into a program memory used for storing program codes. The program memory is divided into a first buffer storage area and a second buffer storage area. By alternate accessing of the first buffer storage area and the second buffer storage area, instantly accessible data can be stored in the program memory, such that the conventional data memory can be replaced by the program memory of the present invention and the cost of the product can be reduced.

Abstract: A method for storing data is disclosed. The method is used for storing data into a program memory used for storing program codes. The program memory is divided into a first buffer storage area and a second buffer storage area. By alternate accessing of the first buffer storage area and the second buffer storage area, instantly accessible data can be stored in the program memory, such that the conventional data memory can be replaced by the program memory of the present invention and the cost of the product can be reduced.

Abstract: A method for controlling outgoing electronic mails is disclosed. The method automatically checks whether the inputted mailing address is one among a list of predetermined mailing addresses obtained by means of providing users with a new field for entering mailing addresses or clicking a predetermined button after entering mailing addresses. This prevents the need to exclude external mailing addresses or to re-enter mailing addresses and the disadvantage of incomplete information security due to deletion mistakes or omission.

Abstract: A method for charging and maintaining a rechargeable battery is provided. A time basis and a charging level are predetermined in the method. When the unused period of the battery does not exceeds the time basis, if the electric potential of the battery is more than the charging level, the battery will not be charged; otherwise, the battery will be charged. When the unused period of the battery exceeds the time basis, if the electric potential of the battery is more than the charging level, the battery will be discharged at first and then charged; otherwise, the battery will be directly charged.

Abstract: Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.

Abstract: Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.