Patents by Inventor Chun Feng
Chun Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240171296Abstract: An optical receiving device includes a substrate; an optical receiving chip arranged on the substrate; an optical demultiplexer arranged on the substrate and used to distinguish optical signals into optical signals with different wavelengths; an optical transmission structure optically coupled to the optical demultiplexer and providing the optical signals to the optical demultiplexer; and an optical fiber array fused with optical fibers of the optical demultiplexer, and transmitting the optical signals with different wavelengths to the optical receiving chip.Type: ApplicationFiled: January 5, 2023Publication date: May 23, 2024Inventor: CHUN-FENG LI
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Publication number: 20240170437Abstract: A package structure is disclosed. The package structure includes a first substrate, a second substrate, a gap, and a directing structure. The second substrate is disposed under the first substrate. The gap is between the first substrate and the second substrate. The gap includes a first region and a second region. The first region is configured to accommodate a filling material. The directing structure is disposed in a flow path of the filling material and configured to reduce a migration of the filling material from the first region to the second region.Type: ApplicationFiled: November 23, 2022Publication date: May 23, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chun Fu KUO, Shang Min CHUANG, Ching Hung CHUANG, Hsu Feng TSENG, Jia Zhen WANG
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Patent number: 11986763Abstract: A remote control system for gas detection and purification is disclosed and includes a remote control device, a gas detection module and a gas purification device. The remote control device includes a gas inlet and a gas outlet. The gas detection module is disposed in the remote control device and in communication with the gas outlet to detect the gas located in an indoor space. The gas detection module provides and outputs a gas detection datum, and the remote control device transmits an operation command via wireless transmission. The gas purification device is disposed in the indoor space and receives the operating instruction transmitted from the remote control device to be operated. When the gas purification device is under the activated state, the gas in the indoor space is purified, and the purification operation mode of the gas purification device is adjusted according to the first gas detection datum.Type: GrantFiled: November 30, 2020Date of Patent: May 21, 2024Assignee: MICROJET TECHNOLOGY CO., LTD.Inventors: Hao-Jan Mou, Yung-Lung Han, Chi-Feng Huang, Chun-Yi Kuo, Yang Ku, Chang-Yen Tsai, Wei-Ming Lee
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Publication number: 20240161818Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.Type: ApplicationFiled: November 30, 2022Publication date: May 16, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Li-Ping Huang, Yu-Fang Chen, Chun-Yen Tseng, Tzu-Feng Chang, Chun-Chieh Chang
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Publication number: 20240157032Abstract: A high-strength medical fiber composite material includes a sodium alginate hydrogel matrix and a fiber framework. The fiber framework is completely embedded in the sodium alginate hydrogel matrix and formed by compounding supporting layer fibers and reinforcing layer fibers. The reinforcing layer fibers are located above the supporting layer fibers. The reinforcing layer fibers and the supporting layer fibers are orthogonal to each other. According to the high-strength medical fiber composite material prepared in the present invention, the stiffness is improved by 3-4 orders of magnitude, the tensile strength is improved by 2-3 orders of magnitude, and the high-strength medical fiber composite material has high biocompatibility and safety and a great application prospect.Type: ApplicationFiled: November 29, 2021Publication date: May 16, 2024Applicant: CHANGZHOU INSTITUTE OF TECHNOLOGYInventors: Che ZHAO, Songxue LIU, Chun FENG, Zhiwei WU, Yiwei ZHANG, Wenbiao JIANG, Xiaozhen LI
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Patent number: 11984322Abstract: A manufacturing method of a semiconductor device, comprises the following steps: providing a semiconductor substrate; forming a dummy insulation layer and a dummy electrode sequentially stacked on the semiconductor substrate; forming spacers on sidewalls of the dummy electrode; removing the dummy electrode to exposes inner sidewalls of the spacers; and performing an ion implantation process to the inner sidewalls of the spacers and the dummy insulation layer.Type: GrantFiled: May 6, 2022Date of Patent: May 14, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tien-Shun Chang, Chun-Feng Nieh, Huicheng Chang, Yee-Chia Yeo
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Patent number: 11984419Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.Type: GrantFiled: July 26, 2022Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hung Chen, Yu-Nu Hsu, Chun-Chen Liu, Heng-Chi Huang, Chien-Chen Li, Shih-Yen Chen, Cheng-Nan Hsieh, Kuo-Chio Liu, Chen-Shien Chen, Chin-Yu Ku, Te-Hsun Pang, Yuan-Feng Wu, Sen-Chi Chiang
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Patent number: 11978678Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.Type: GrantFiled: August 5, 2022Date of Patent: May 7, 2024Assignee: INNOLUX CORPORATIONInventors: Tung-Kai Liu, Tsau-Hua Hsieh, Wei-Cheng Chu, Chun-Hsien Lin, Chandra Lius, Ting-Kai Hung, Kuan-Feng Lee, Ming-Chang Lin, Tzu-Min Yan, Hui-Chieh Wang
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Patent number: 11978634Abstract: A method of forming a semiconductor device includes performing a first implantation process on a semiconductor substrate to form a deep p-well region, performing a second implantation process on the semiconductor substrate with a diffusion-retarding element to form a co-implantation region, and performing a third implantation process on the semiconductor substrate to form a shallow p-well region over the deep p-well region. The co-implantation region is spaced apart from a top surface of the semiconductor substrate by a portion of the shallow p-well region, and the dee p-well region and the shallow p-well region are joined with each other. An n-type Fin Field-Effect Transistor (FinFET) is formed, with the deep p-well region and the shallow p-well region acting as a well region of the n-type FinFET.Type: GrantFiled: May 25, 2022Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sih-Jie Liu, Chun-Feng Nieh, Huicheng Chang
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Publication number: 20240144717Abstract: Disclosed are systems, apparatuses, processes, and computer-readable media to capture images. A method of processing image data includes determining a first region of interest (ROI) in an image. The first ROI is associated with a first object. The method can include determining one or more image characteristics of the first ROI. The method can further include determining whether to perform an upsampling process on image data in the first ROI based on the one or more image characteristics of the first ROI.Type: ApplicationFiled: October 26, 2022Publication date: May 2, 2024Inventors: Wen-Chun FENG, Kai LIU, Su-Chin CHIU, Chung-Yan CHIH, Yu-Ren LAI
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Publication number: 20240144862Abstract: An electronic device with a first region and a second region located around the first region is disclosed. The electronic device includes a first gate driver and a second gate driver disposed in the second region, and a first transistor and a second transistor disposed in the first region. The first gate driver is used for outputting a first signal. The second gate driver is used for outputting a second signal. The first transistor is used for receiving the first signal from the first gate driver. The second transistor is used for receiving the second signal from the second gate driver. In a top view of the electronic device, the first region has a first side and a second side opposite to the first side, and the first gate driver and the second gate driver are located more adjacent to the first side and away from the second side.Type: ApplicationFiled: January 3, 2024Publication date: May 2, 2024Applicant: InnoLux CorporationInventors: Chun-Hsien LIN, Jui-Feng KO, Geng-Fu CHANG
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Publication number: 20240146095Abstract: A method for intermittently discharging an inverter in an energy storage apparatus and an energy storage apparatus using the method are disclosed. The method includes a protection step; and an intermittent discharge step, which includes having a battery management system detect a charge level of a capacitor and send it to a control unit, and when the charge level is below an activation threshold, having the control unit control a battery pack to perform a first discharge procedure to charge the capacitor for at least two times intermittently until the charge level reaches the activation threshold, thereby providing fast charge for the capacitor.Type: ApplicationFiled: October 24, 2023Publication date: May 2, 2024Inventors: SHIH-FENG TSENG, CHUN-HSIUNG CHEN
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Patent number: 11972982Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.Type: GrantFiled: July 14, 2022Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun Hsiung Tsai, Yu-Ming Lin, Kuo-Feng Yu, Ming-Hsi Yeh, Shahaji B. More, Chandrashekhar Prakash Savant, Chih-Hsin Ko, Clement Hsingjen Wann
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Publication number: 20240136228Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Yee-Chia Yeo
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Publication number: 20240136905Abstract: A button mechanism is provided, including a button element, a magnet connected to the button, a hollow tube, a first coil, and a second coil. The first and second coils are disposed on the tube. When the first coil generates a first magnetic field, the magnet is magnetically attracted by the first coil, and the button element is positioned in the first position. When the second coil generates a second magnetic field, the magnet is attracted by the second coil, and the button element is positioned in the second position.Type: ApplicationFiled: January 13, 2023Publication date: April 25, 2024Inventors: Chun-Lung CHEN, Chih-Ching HSIEH, Chun-Feng YEH
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Publication number: 20240115938Abstract: A force feedback module is provided. The force feedback module includes a trigger element, an actuating element, and a transmission assembly disposed between the trigger element and the actuating element. The transmission assembly includes a first transmission element. The first transmission element and the trigger element change between a contact state and a non-contact state. When the first transmission element and the trigger element are in the contact state, a driving force generated by the actuating element is transmitted to the trigger element via the transmission assembly to generate force feedback.Type: ApplicationFiled: December 29, 2022Publication date: April 11, 2024Inventors: Chun-Feng YEH, Chun-Lung CHEN
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Patent number: 11955335Abstract: In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.Type: GrantFiled: August 8, 2022Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tung-Hung Feng, Hui-Chun Lee, Sheng-Wen Jiang, Shih-Che Wang
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Patent number: 11955579Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.Type: GrantFiled: April 21, 2022Date of Patent: April 9, 2024Assignee: INNOLUX CORPORATIONInventors: Kai Cheng, Tsau-Hua Hsieh, Fang-Ying Lin, Tung-Kai Liu, Hui-Chieh Wang, Chun-Hsien Lin, Jui-Feng Ko
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Publication number: 20240113221Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.Type: ApplicationFiled: November 28, 2023Publication date: April 4, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
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Patent number: 11949058Abstract: The present disclosure provides a battery piece feeding device and a soldering stringer, the battery piece feeding device is configured to lay battery pieces onto a soldering conveying device, the battery piece feeding device includes two picking mechanisms, both of the picking mechanisms are configured to alternately pick up the battery pieces from a battery piece picking position and lay the picked battery pieces onto the soldering conveying device. When one picking mechanism picks up the battery piece from the battery piece picking position, the other picking mechanism lays the picked battery piece onto the soldering conveying device. By arranging the two picking mechanisms and controlling the two picking mechanisms to alternately pick up the battery pieces from the battery piece picking position and lay the picked battery pieces onto the soldering conveying device, the battery piece feeding device greatly improves the battery piece feeding efficiency.Type: GrantFiled: May 26, 2023Date of Patent: April 2, 2024Assignee: WUXI AUTOWELL TECHNOLOGY CO., LTD.Inventors: Xiaolong Jiang, Kejian Qiu, Cong Ma, Chun Feng