Patents by Inventor Chun-Han Chu

Chun-Han Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11676494
    Abstract: The present invention discloses a vessel collision avoiding system and method based on Artificial Potential Field algorithm, the method comprises the following steps: (S1) obtaining a vessel information, at least one obstacle information and a target information; (S2) establishing an Artificial Potential Field (APF) by the vessel information, the at least one obstacle information and the target information, wherein the Artificial Potential Field comprises an attractive field of the target and a repulsive field of the obstacle; (S3) combining the attractive field and the repulsive field to obtain a first resultant force; (S4) Adding an external force to the Artificial Potential Field based on the vessel information or the obstacle information; (S5) combining the first resultant force and the external force to obtain a second resultant force; and (S6) the vessel sails in the direction of the second resultant force to avoid the obstacle.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: June 13, 2023
    Assignee: SHIP AND OCEAN INDUSTRIES R&D CENTER
    Inventors: Feng-Yeang Chung, Chun-Han Chu, Chi-Min Liao, Mu-Hua Chen, Ling-Ji Mu, Li-Yuan Zhang, Sheng-Wei Huang
  • Patent number: 11495684
    Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: November 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
  • Publication number: 20220171062
    Abstract: This invention discloses an inland river Lidar navigation system for vessels, comprising a receiver, a memory, a processor and a display. The processor coupled to the receiver and the memory, and the display coupled to the processor. Overall, the inland river navigation Lidar system based on Lidar is able to make use of the preset map data identification uncalculatable points of a point cloud of the predetermined procedure, thereby removing of the alignment step in traditional method can be omitted. Therefore, the processing speed can be improved.
    Type: Application
    Filed: May 4, 2021
    Publication date: June 2, 2022
    Inventors: MING-HSIANG HSU, CHI-MIN LIAO, CHUN-HAN CHU
  • Patent number: 11307589
    Abstract: The present invention relates to a vessel navigation system and navigation method thereof, the method includes: (a) driving a vessel to sail along a sailing path including at least two nodes, the at least two nodes include a first node and a second node connected by a first line segment; (b) generating a first tracking point on the first line segment when a distance between the vessel and the first node being less than a first length, and driving the vessel to sail according to the first tracking point; (c) generating a second tracking point on the first line segment when a distance between the vessel and the first tracking point being less than the first length, and driving the vessel to sail according to the second tracking point; and then completing the navigation of the sailing path by repeating the step (b) and step (c) until the vessel passes through each node.
    Type: Grant
    Filed: March 31, 2019
    Date of Patent: April 19, 2022
    Assignee: SHIP AND OCEAN INDUSTRIES R&D CENTER
    Inventors: Feng-Yeang Chung, Ching-Chin Tu, Chun-Han Chu, Min-Hsiang Hsu
  • Publication number: 20210295708
    Abstract: The present invention discloses a vessel collision avoiding system and method based on Artificial Potential Field algorithm, the method comprises the following steps: (S1) obtaining a vessel information, at least one obstacle information and a target information; (S2) establishing an Artificial Potential Field (APF) by the vessel information, the at least one obstacle information and the target information, wherein the Artificial Potential Field comprises an attractive field of the target and a repulsive field of the obstacle; (S3) combining the attractive field and the repulsive field to obtain a first resultant force; (S4) Adding an external force to the Artificial Potential Field based on the vessel information or the obstacle information; (S5) combining the first resultant force and the external force to obtain a second resultant force; and (S6) the vessel sails in the direction of the second resultant force to avoid the obstacle.
    Type: Application
    Filed: March 23, 2020
    Publication date: September 23, 2021
    Inventors: FENG-YEANG CHUNG, CHUN-HAN CHU, CHI-MIN LIAO, MU-HUA CHEN, LING-JI MU, LI-YUAN ZHANG, SHENG-WEI HUANG
  • Publication number: 20210191400
    Abstract: The present invention discloses an autonomous vessel simulation system, comprising an environment model building system, a vessel model building system and a central processing system. The environment model building system builds at least one environment model; the vessel model building system builds at least one vessel model and an operation module of the central processing system integrates the environment model and the vessel model. The vessel model is navigated in the environment model according to at least one navigational parameter, and a display module displays the navigation status of the vessel model. In addition, an operating method of the autonomous vessel simulation system is also provided.
    Type: Application
    Filed: December 4, 2020
    Publication date: June 24, 2021
    Inventors: FENG-YEANG CHUNG, CHUN-HAN CHU, CHIA-CHUAN OU, MING-HSIANG HSU, CHUN-JUNG CHEN, CHI-MIN LIAO, YING-CHAO LIAO
  • Publication number: 20200310434
    Abstract: The present disclosure relates a vessel navigation system and method, including: (a) driving a vessel to sail along a sailing path including at least two nodes, the at least two nodes include a first node and a second node connected by a first line segment; (b) generating a first tracking point on the first line segment when a distance between the vessel and the first node being less than a first length, and driving the vessel to sail according to the first tracking point; (c) generating a second tracking point on the first line segment when a distance between the vessel and the first tracking point being less than the first length, and driving the vessel to sail according to the second tracking point; and (d) repeating the step (b) and step (c) until the vessel passes through each node. Thereby, the vessel completes the navigation of the sailing path.
    Type: Application
    Filed: March 31, 2019
    Publication date: October 1, 2020
    Inventors: FENG-YEANG CHUNG, CHING-CHIN TU, CHUN-HAN CHU, MIN-HSIANG HSU
  • Publication number: 20200259017
    Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.
    Type: Application
    Filed: April 27, 2020
    Publication date: August 13, 2020
    Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
  • Patent number: 10636908
    Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: April 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
  • Patent number: 10553720
    Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: February 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Han Chu, Nai-Chia Chen, Jui-Ming Shih, Ping-Jung Huang, Tsung-Min Chuo, Bi-Ming Yen
  • Publication number: 20190097052
    Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 28, 2019
    Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
  • Publication number: 20180151735
    Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.
    Type: Application
    Filed: October 27, 2017
    Publication date: May 31, 2018
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Han Chu, Nai-Chia Chen, Jui-Ming Shih, Ping-Jung Huang, Tsung-Min Chuo, Bi-Ming Yen