Patents by Inventor Chun-Hsiang Tu
Chun-Hsiang Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240121523Abstract: A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.Type: ApplicationFiled: October 7, 2022Publication date: April 11, 2024Inventors: Kai-Hao CHANG, Chun-Yuan WANG, Shin-Hong KUO, Zong-Ru TU, Po-Hsiang WANG, Chih-Ming WANG
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Publication number: 20240105744Abstract: An image sensor includes a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a first deflector, and a covering layer. The photoelectric conversion layer includes a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, in which a pixel dimension is determined by a distance between two adjacent deep trench isolations. The first color filter is disposed on the first photodiode and the second photodiode. The first deflector is disposed on the first color filter. The covering layer covers and surrounds the first deflector. A refractive index of the covering layer is greater than a refractive index of the first deflector, and a difference value between the refractive index of the covering layer and the refractive index of the first deflector is in a range from 0.15 to 0.6.Type: ApplicationFiled: September 28, 2022Publication date: March 28, 2024Inventors: Ching-Hua LI, Chun-Yuan WANG, Zong-Ru TU, Po-Hsiang WANG
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Patent number: 11677046Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: August 2, 2022Date of Patent: June 13, 2023Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20220376143Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: August 2, 2022Publication date: November 24, 2022Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 11437547Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: November 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20220029055Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle a between thereofType: ApplicationFiled: October 7, 2021Publication date: January 27, 2022Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou WANG, Chun-Hsiang TU, Jing-Feng HUANG
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Patent number: 11158762Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.Type: GrantFiled: June 9, 2020Date of Patent: October 26, 2021Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
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Publication number: 20210074890Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10847682Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: July 12, 2019Date of Patent: November 24, 2020Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Patent number: 10790412Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle ? between thereof, 30°???80°.Type: GrantFiled: January 28, 2019Date of Patent: September 29, 2020Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Chun-Hsiang Tu, Yu-Shou Wang, Jing-Feng Huang
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Publication number: 20200303587Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.Type: ApplicationFiled: June 9, 2020Publication date: September 24, 2020Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou Wang, Chun-Hsiang TU, Jing-Feng Huang
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Patent number: 10714657Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.Type: GrantFiled: August 1, 2018Date of Patent: July 14, 2020Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
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Publication number: 20190334069Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: July 12, 2019Publication date: October 31, 2019Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10411177Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: June 26, 2018Date of Patent: September 10, 2019Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20190157507Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle ? between thereof, 30°???80°Type: ApplicationFiled: January 28, 2019Publication date: May 23, 2019Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Chun-Hsiang TU
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Patent number: 10236413Abstract: A light-emitting device including a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion; a second semiconductor stack including a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle ? between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle ? between thereof; and wherein the roughed surface is connected to the top surface.Type: GrantFiled: January 23, 2017Date of Patent: March 19, 2019Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Chun-Hsiang Tu
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Publication number: 20190067516Abstract: The present disclosure provides a semiconductor device including a substrate, a first buffer structure and a semiconductor stack layer. The substrate includes a base part and a plurality of character parts connected to the base part. The first buffer structure is disposed on the base part and is separated from the plurality of character parts by at least one distance. The semiconductor stack layer is disposed on the first buffer structure and the plurality of character parts.Type: ApplicationFiled: August 30, 2018Publication date: February 28, 2019Inventors: Chun-Hsiang TU, De-Shan KUO, Peng-Ren CHEN
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Publication number: 20180374990Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.Type: ApplicationFiled: August 1, 2018Publication date: December 27, 2018Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou Wang, Chun-Hsiang TU, Jing-Feng Huang
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Publication number: 20180309038Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: June 26, 2018Publication date: October 25, 2018Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10090440Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; a semiconductor stack on the substrate comprising a first region and a second region; a first trench extending from the semiconductor stack to the substrate to expose a surface of the substrate and separating the first region from the second region; and a first electrode comprising a first pad on the first region and a first extending electrode connecting to the first pad, wherein the first extending electrode is across the first trench.Type: GrantFiled: May 5, 2017Date of Patent: October 2, 2018Assignee: EPISTAR CORPORATIONInventors: Victor Liu, De-Shan Kuo, Hsin-Ying Wang, Chun-Hsiang Tu, Yu-Ting Huang